• Title/Summary/Keyword: slope efficiency

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Analytical Modeling of Carbon Nanotube Actuators (탄소나노튜브 액츄에이터의 이론적 모델링)

  • 염영일;박철휴
    • Journal of Institute of Control, Robotics and Systems
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    • v.10 no.11
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    • pp.1006-1011
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    • 2004
  • Carbon nanotubes have outstanding properties which make them useful for a number of high-technology applications. Especially, single-walled carbon nanotube (SWNT), working under physical conditions (in aqueous solution) and converting electrical energy into mechanical energy directly, can be a good substitute for artificial muscle. The carbon nanotube structure simulated in this paper is an isotropic cantilever type with an adhesive tape which is sandwiched between two SWNTs. For predicting the geometrical and physical parameters such as deflection, slope, bending moment and induced force with various applied voltages, the analytical model for a 3 layer bimorph nanotube actuator is developed by applying Euler-Bernoulli beam theory. The governing equation and boundary conditions are derived from energy Principles. Also, the brief history of carbon nonotube is overviewed and its properties are compared with other functional materials. Moreover, an electro-mechanical coupling coefficient of the carbon nanotube actuator is discussed to identify the electro-mechanical energy efficiency.

Fabrication of 1.55.mu.m RWG DFB lasers (1.55.mu.m RWG-DFB 레이저 제작에 관한 연구)

  • 김중연;강명구;전현성;오환술
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.469-472
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    • 1998
  • InGaAsP/InP ridge waveguide(RWG) distributed feedback(DFB) lasers (LD) operating at 1.55.mu.m were fabricated by a two step MOCVD process. The CW laser threshold and the slope efficiency from these lasers are 22.5mA and 0.127mW/MA perfacet at room temperature. Single longitudinal mode operation with side mode suppression of more than 30dB is obtained at 5mW. The temperature sensitivity and characteristic temperature (T$_{0}$) from DFB lasers were obtained 1.0.angs./.deg. C and 50.3K between 20.deg. C and 70.deg. C, respectively.y.

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Evaluation of the Reinforcing Effect on Shallow Foundation by Micropiles (Micropile에 의한 얕은기초의 보강효과)

  • Jeang, Jae-Young;Bae, Kyung-Tae;Park, Seong-Wan;Lee, Chong-Kyu
    • Proceedings of the Korean Geotechical Society Conference
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    • 2004.03b
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    • pp.538-543
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    • 2004
  • Micropile has been widely used for reinforcing general grounds, improving slope stability and structural foundations. However, a need still exists for evaluating the effects of inclined micropiles on shallow foundations in Korea. In this paper, numerical analyses were presented to evaluate settlement characteristics on shallow foundations reinforced by micropiles and the effects of inclined micropiles under various conditions such as the installation position, installation angle, hardness(diameter), and grouting type. In addition, this paper reports trends of effectiveness and efficiency of using inclined micropiles on shallow foundations under specified conditions.

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Design of Monolithically Integrated Vertical Cavity Laser with Depleted Optical Thyristor for Optically Programmable Gate Array (Optically Programmable Gate Array 구현을 위한 수직 공진형 완전공핍 광싸이리스터)

  • Choi, Woon-Kyung;Kim, Do-Gyun;Choi, Young-Wan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.8
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    • pp.1580-1584
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    • 2009
  • We have theoretically analyzed the monolithic integration of vertical cavity lasers with depleted optical thyristor (VCL-DOT) structure and experimentally demonstrated optical logic gates such as AND-gate, OR-gate, and INVERTER implemented by VCL-DOT for an optical programmable gate array. The optical AND and OR gates have been realized by changing a input bias of the single VCL-DOTs and all kinds of optical logic functions are also implemented by adjusting an intensity of the reference input beams into the differential VCL-DOTs. To achieve the high sensitivity, high slope efficiency and low threshold current, a small active region of lasing part and a wide detecting area are simultaneously designed by using a selective oxidation process. The fabricated devices clearly show nonlinear s-shaped current-voltage characteristics and lasing characteristics of a low threshold current with 0.65 mA and output spectrum at 854 nm.

Fabrication of 1.3$\mu$m InGaAsP/InP uncooled-LD using low pressure MOVPE (저압 유기금속 기상화학증착법에 의한 1.3$\mu$m InGaAsP/InP uncooled-LD의 제작)

  • 조호성;김정수;이중기;장동훈;박경현;이승원;박기성;김홍만;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.6
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    • pp.75-81
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    • 1995
  • InGaAsP/InP uncooled LDs emitting at 1.3$\mu$m wavelength are of interest for several application of fiber-to-the-home, optical interconnection, long-haul high-bit-rate optical transmission systems, etc. The strain compensated PBH-MQW-LD employing 1.4% compressive strained well (${\lambda}=1.3{\mu}m$) and 0.7% tensile strained barrier (${\lambda}=1.12{\mu}m$) layers grown by low pressure metallicorganic vapor phase epitaxy was found to be low threshold current and stable temperature characteristics. The average threshold current of 5.6mA and average slope efficiency of 0.27mW/mA at room temperature were obtained for uncoated uncooled-LD.

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Tailoring the Static Characteristics of Implanted VCSELs with the Implant and Metal Aperture Radii (임플랜트 및 금속전극 반경에 따른 임플랜트 VCSEL 정특성의 변화)

  • Kim, Tae-Yong;Kim, Sang-Bae;Park, Bun-Jae;Son, Jeong-Hwan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.7
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    • pp.37-41
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    • 2004
  • We have formulated an empirical analytic model for the static characteristics of implanted vertical-cavity surface-emitting lasers (VCSELs). Specifically, we have derived analytic formulas for the threshold current, slope efficiency, dynamic resistance, and the output power and forward voltage at the operation current of 12 ㎃ in terms of the implant and metal-aperture radii by fitting the measured results. The radii of the metal aperture and implant mask of the 850 nm VCSELs range from 4 to 12.5 ${\mu}{\textrm}{m}$ and 7 to 17.5 ${\mu}{\textrm}{m}$ respectively. The model shows the way of tailoring the VCSEL characteristics by changing the mask dimensions only.

Performance Analysis on the Various Shapes of Symmetric Fins (여러 형상의 대칭적인 핀의 성능 해석)

  • Kang, Hyung-Suk
    • Journal of Industrial Technology
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    • v.16
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    • pp.97-104
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    • 1996
  • A comparison of the fin effectiveness, thermal resistance, and fin efficiency between the symmetric triangular fin and the symmetric trapezoidal fin which has various slopes of the fin side is made. Also the relation between Biot number and the non-dimensional fin length for equal amount of heat loss from these fins is shown. For these analyses, a forced analytic method is used. In particular, the equation for the heat loss is used simultaneously for both the symmetric triangular fin and the symmetric trapezoidal fins by just adjusting the value of the slope factor. The value of Biot number varies from 0.01 to 1.0 and the non-dimensional fin length varies from 0.01 to 10. For simplicity, the root temperature and fin's surrounding convection coefficients are assumed constant and the condition is assumed to be steady state.

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Fabrication of low chirping MQW-PBH-DB-LD for 2.5Gbps optical fiber communication (2.5Gbps 광통신용 저 chirping MQW-PBH-DFB-LD의 제작)

  • 장동훈;이중기;조호성;김정수;박경현;김홍만;박형무
    • Korean Journal of Optics and Photonics
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    • v.5 no.3
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    • pp.418-422
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    • 1994
  • 본 연구에서는 MOVPE를 이용한 MQW활성층을 DFB-LD 구조에 도입함으로서 2.5Gbps 광전송용 광원으로 사용된 $ 1.55.\mu$m 파장의 MQW-PBH-DFB-LD를 제작하였다. 활성층으로는 MOVPE를 이용하여 8쌍의 InGaAs/InGaAsP MQW층을 성장하였으며 2차 및 3차 결정성장은 LPE를 사용하였고 발진파장을 결정하는 회절격자 주기는 238nm로 하였다. MQW-PBH-DFB-LD의 평균 임계전류는 13.81mA, Slope efficiency는 0.137mW/mA이었고 발진파장은 1548.6nm의 특성을 얻었다. 그리고 2.5Gbps 대신호 변조시의 chirping특성을 조사하여 본 결과 0.55nm임을 확인할 수가 있었다.

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Fabrication and characterization of InGaAs/InGaAsP strained multiple quantum well PBH-DFB-LDs (압축응력 다중양자우물 구조 InGaAs/InGaAsP PBH-DFB-LD의 제작과 특성 평가)

  • 이정기;장동훈;조호성;박경현;김정수;김홍만;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.8
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    • pp.119-125
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    • 1995
  • Strained multiple quantum well(SMQW) PBH-DFB-LDs emitting at 1.55$\mu$m wavelength has been fabricated using OMVPE and LPE crystal growth tecnique. Using the SMQW active layer, a linewidty enhancement factor of 2.65 was obtained at lasing wavelength and consequnently, packaged 42 modules showed a very low average chirp of 0.44nm at 2.5Gbps NRZ direct modulation. The 77 devices showed average threshold current of 8.72mA and average slope efficiency of 0.181 mW/mA, and single longitudinal mode operation with SMSR larger than 30dB up to 5mW. Among the 77 devices, standard deviation of lasing wavelength of 3.57nm was obtained owing to a good crystal growth uniformity.

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Fast Local Indoor Map Building Using a 2D Laser Range Finder (2차원 레이저 레이진 파이더를 이용한 빠른 로컬 실내 지도 제작)

  • Choi, Ung;Koh, Nak-Yong;Choi, Jeong-Sang
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1999.10a
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    • pp.99-104
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    • 1999
  • This paper proposes an efficient method constructing a local map using the data of a scanning laser range finder. A laser range finder yields distance data of polar form, that is, distance data corresponding to every scanning directions. So, the data consists of directional angle and distance. We propose a new method to find a line fitting with a set of such data. The method uses Log-Hough Transformation. Usually, map building from these data requires some transformations between different coordinate systems. The new method alleviates such complication. Also, the method simplifies computation for line recognition and eliminates the slope quantization problems inherent in the classical Cartesian Hough transform method. To show the efficiency of the proposed method, it is applied to find a local map using the data from a laser range finder PLS(Proximity Laser Scanner, made by SICK).

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