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Tailoring the Static Characteristics of Implanted VCSELs with the Implant and Metal Aperture Radii  

Kim, Tae-Yong (School of Electrical and Computer Engineering, Ajou University)
Kim, Sang-Bae (School of Electrical and Computer Engineering, Ajou University)
Park, Bun-Jae (Optoway Inc)
Son, Jeong-Hwan (PROWTech Inc.)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.7, 2004 , pp. 37-41 More about this Journal
Abstract
We have formulated an empirical analytic model for the static characteristics of implanted vertical-cavity surface-emitting lasers (VCSELs). Specifically, we have derived analytic formulas for the threshold current, slope efficiency, dynamic resistance, and the output power and forward voltage at the operation current of 12 ㎃ in terms of the implant and metal-aperture radii by fitting the measured results. The radii of the metal aperture and implant mask of the 850 nm VCSELs range from 4 to 12.5 ${\mu}{\textrm}{m}$ and 7 to 17.5 ${\mu}{\textrm}{m}$ respectively. The model shows the way of tailoring the VCSEL characteristics by changing the mask dimensions only.
Keywords
VCSELs; diode lasers; surface-emitting lasers;
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