• KOREAN JOURNAL OF CROP SCIENCE
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• v.29 no.1
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• pp.62-66
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• 1984

One row of pollen parent to two rows of seed parent (1:2), 2:4 and solid (1:2) planting patterns (PP) were compared in seed parent densities of 3,500, 5,000 and 6,500 plants per 10 ares to determine effects of PP and plant density on growths of seed and pollen plants, and seed yield of seed parent of modified single cross corn hybrid. Planting pattern did not significantly affect agronomic characteristics of seed plant except ear number per 100 plants and seed yield which were greater in solid and 1:2 PP than in 2:4 PP. Significant PP x plant density interaction did not exist for agronomic characteristics of seed parent. In the seed parent, plant height and 100 kernel weight were not affected by plant density, but ear height, ear number per 100 plants, and kernel number per ear were linearly decreased with increased plant densities. Seed yield ranged from 330 to 460 kg per 10 ares and overall yield response to plant density was quadratic. Tassel length and spikelet number per tassel of the pollen parent were significantly affected by PP and plant density. Significant PP x plant density interaction existed for tassel length and spikelet number per tassel. Tassel length and spikelet number per tassel were greater in 1:2 and 2:4 PP compared to solid PP and were greatly reduced with increased plant densities in solid and 1:2 PP. The results indicated that 1:2 or 2:4 PP at around 5,000 plants per 10 ares for seed parent would be suitable for seed production of modified single cross com hybrid.

• BMB Reports
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• v.48 no.12
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• pp.643-644
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• 2015

In eukaryotes, small RNAs play important roles in both gene regulation and resistance to viral infection. Argonaute proteins have been identified as a key component of the effector complexes of various RNA-silencing pathways, but the mechanistic roles of Argonaute proteins in these pathways are not clearly understood. To address this question, we performed single-molecule fluorescence experiments using an RNA-induced silencing complex (core-RISC) composed of a small RNA and human Argonaute 2. We found that target binding of core-RISC starts at the seed region of the guide RNA. After target binding, four distinct reactions followed: target cleavage, transient binding, stable binding, and Argonaute unloading. Target cleavage required extensive sequence complementarity and accelerated core-RISC dissociation for recycling. In contrast, the stable binding of core-RISC to target RNAs required seed-match only, suggesting a potential explanation for the seed-match rule of microRNA (miRNA) target selection.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.111-118
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• 1994

Silicon single crystals were continuously grown by a modified process. Polycrystalline silicon powder was fed from the top reservoir to the growth chamber. Silicon single crystals were grown from the botton of the growth chamber. The balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed was the one of the main factors to control the diameter of crystals grown and quality, etc.

• Journal of the Earthquake Engineering Society of Korea
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• v.25 no.1
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• pp.43-52
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• 2021

According to several seismic design standards, a ground motion time history should be selected similar to the design response spectrum, or a ground motion time history should be modified by matching procedure to the design response spectrum through the time-domain method. For the response spectrum matching procedure, appropriate seed ground motions need to be selected to maintain recorded earthquake accelerogram characteristics. However, there are no specific criteria for selecting the seed ground motions for applying this methodology. In this study, the characteristics of ground motion time histories between seed motions and spectral matched motions were compared. Intensity measures used in the design were compared, and their change by spectral matching procedure was quantified. In addition, the seed ground motion sets were determined according to the response spectrum shape, and these sets analyzed the response of nonlinear and equivalent linear single degrees of freedom systems to present the seed motion selection conditions for spectral matching. As a result, several considerations for applying the time domain spectral matching method were presented.

• Journal of Magnetics
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• v.19 no.4
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• pp.333-339
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• 2014

Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

• Journal of Plant Biology
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• v.29 no.4
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• pp.295-315
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• 1986

Structure and differentiation mechanism of the seed coat of Panax ginseng are studied with light and electron microscopes to clarify the developmental processes of seed coat and the structural changes during the differentiation of the seed. The seed coat of ginseng is differentiated from the inner cell layers of ovary wall, which can be compared with the seed coat differentiated from integument(s) in other plants. The single integument is differentiated into endothelium, which is degenerated to one layer of 4${\mu}{\textrm}{m}$ in thickness, composed of remants of cell wall components in fully ripened seed. The ripened seed coat is composed of three layers; fringe layer, inner layer and palisade layer, and all of the them are crossed at right angles with one another. This may be the cause of protection of the kernel from other mechanical injuries. The thickness of fully ripened seed coat is about 300~600 ${\mu}{\textrm}{m}$, and arrangements of sclereids are irregular. However, the raphe region of seed coat is thin about 200 ${\mu}{\textrm}{m}$ in thickness and sclereids in that region are arranged regularly. This is the important cause for the cleavage of the seed coat during post-maturation process. The vascular bundles on the raphe are still remaining after sarcocarps are removed, and one of the branches of vascular bundles entered into the seed coat through the hilum and extended to chalazal region. During post-maturation process, the supply of water being necessary for growth of embryo may be accompolished by the vascular bundles entered into the seed coat through the opened hilum.

• Korean Journal of Materials Research
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• v.31 no.9
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• pp.488-495
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• 2021

Solid state grain growth (SSCG) is a method of growing large single crystals from seed single crystals by abnormal grain growth in a small-grained matrix. During grain growth, pores are often trapped in the matrix and remain in single crystals. Aerosol deposition (AD) is a method of manufacturing films with almost full density from nano grains by causing high energy collision between substrates and ceramic powders. AD and SSCG are used to grow single crystals with few pores. BaTiO₃ films are coated on (100) SrTiO₃ seeds by AD. To generate grain growth, BaTiO₃ films are heated to 1,300 ℃ and held for 10 h, and entire films are grown as single crystals. The condition of grain growth driving force is ∆G_max < ∆G_c ≤ ∆G_seed. On the other hand, the condition of grain growth driving force in BaTiO₃ AD films heat-treated at 1,100 and 1,200 ℃ is ∆G_c < ∆G_max, and single crystals are not grown.

• The Plant Pathology Journal
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• v.37 no.2
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• pp.173-181
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• 2021

The genus Streptomyces demonstrates enormous promise in promoting plant growth and protecting plants against various pathogens. Single and consortium treatments of two selected Streptomyces strains (Streptomyces shenzhenensis TKSC3 and Streptomyces sp. SS8) were evaluated for their growth-promoting potential on rice, and biocontrol efficiency through induced systemic resistance (ISR) mediation against Xanthomonas oryzae pv. oryzicola (Xoc), the causal agent of rice bacterial leaf streak (BLS) disease. Seed bacterization by Streptomyces strains improved seed germination and vigor, relative to the untreated seed. Under greenhouse conditions, seed bacterization with consortium treatment TKSC3 + SS8 increased seed germination, root length, and dry weight by 20%, 23%, and 33%, respectively. Single and consortium Streptomyces treatments also successfully suppressed Xoc infection. The result was consistent with defense-related enzyme quantification wherein single and consortium Streptomyces treatments increased peroxidase (POX), polyphenol oxidase, phenylalanine ammonia-lyase, and β,1-3 glucanase (GLU) accumulation compared to untreated plant. Within all Streptomyces treatments, consortium treatment TKSC3 + SS8 showed the highest disease suppression efficiency (81.02%) and the lowest area under the disease progress curve value (95.79), making it the best to control BLS disease. Consortium treatment TKSC3 + SS8 induced the highest POX and GLU enzyme activities at 114.32 µmol/min/mg protein and 260.32 abs/min/mg protein, respectively, with both enzymes responsible for plant cell wall reinforcement and resistant interaction. Our results revealed that in addition to promoting plant growth, these Streptomyces strains also mediated ISR in rice plants, thereby, ensuring protection from BLS disease.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.673-679
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• 2006

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. In this study, SiC crystal boules were prepared with different angles in trapezoid-shaped graphite seed holders using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were varied with angles in trapezoid-shaped graphite seed holders, which was successfully simulated using 'Virtual Reactor'. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The micropipe densities of SiC wafers in this study were measured to be < $100/cm^2$. Consequently, SiC single crystal with large diameter was successfully achieved with changing angle in trapezoid-shaped graphite seed holders.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.