• Title/Summary/Keyword: single phase structure

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Mossbauer Studies of the $H_2$ Reduction Effects On Magnetic Properties of Sr-Ba Substituted Hexgonal Ferrite (치환형 Sr-Ba 육방 페라이트들의 자기적 성질에 수소환원이 미치는 효과에 관한 Mossbauer 분광학적 연구)

  • 박재윤;권명회;이재광
    • Journal of the Korean Magnetics Society
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    • v.9 no.1
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    • pp.35-40
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    • 1999
  • Sr substituted materials for some barium in M-type barium ferrite powder and Co-Ti substituted Sr-Ba hexagonal ferrite powder were prepared by citrate sol-gel method and 2 MOE sol-gel method these hexaferrite particles were reduced for 1hr in the hydrogen gas. The reduction temperatures were varied in the range of 250 $^{\circ}C$ to 500 $^{\circ}C$. X-ray diffraction patterns were measured using diffractometer with Cu $K_{\Alhpa}$ radiation. Mossbauer absorption spectra were measured with a constant acceleration spectrometer. We have focused on studying the origin of increasing $M_s$ by M$\"{o}$ssbauer spectroscopy. Ferrite particles which were sintered at 105$0^{\circ}C$ were found to be typical magnetoplumbite structure and single phase. XRD patterns with varying the reduction temperatures in $Sr_{0.5}Ba_{0.5}Fe_{10}O_{19}$ indicates ferrites particles become composite hexaferrites containing $\alpha$-Fe at T_{red}=350 \;$^{\circ}C$$. On the otherhand, it was found that $Co^{2+}$ ions and $Ti^{4+}$ ions in $Sr_{0.7}Ba_{0.3}Fe_{10}CoTiO_{19}$ prevent from changing $Fe^{3+}$ ions to $\alpha$-Fe during the $H_2$ reduction. Comparing Mossbauer results with XRD results, we have determined most of $\alpha$-Fe are reduced from $4f_{vi}$ sites and 12k sites of $Fe^{3+}$ ions. These $\alpha$-Fe phase bring the induced anisotropy and increase saturation magnetization $M_s$.TEX>.

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Optical and Structural Analysis of BaSi2O2N2:Eu Green Phosphor for High-Color-Rendering Lighting (고연색 백색 광원용 BaSi2O2N2:Eu 형광체의 광학·구조 특성 분석)

  • Lee, Sunghoon;Kang, Taewook;Kang, Hyeonwoo;Jeong, Yongseok;Kim, Jongsu;Heo, Hoon
    • Korean Journal of Materials Research
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    • v.29 no.7
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    • pp.437-442
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    • 2019
  • Green $BaSi_2O_2N_2:0.02Eu^{2+}$ phosphor is synthesized through a two-step solid state reaction method. The first firing is for crystallization, and the second firing is for reduction of $Eu^{3+}$ into $Eu^{2+}$ and growth of crystal grains. By thermal analysis, the three-time endothermic reaction is confirmed: pyrolysis reaction of $BaCO_3$ at $900^{\circ}C$ and phase transitions at $1,300^{\circ}C$ and $1,400^{\circ}C$. By structural analysis, it is confirmed that single phase [$BaSi_2O_2N_2$] is obtained with Cmcm space group of orthorhombic structure. After the first firing the morphology is rod-like type and, after the second firing, the morphology becomes round. Our phosphor shows a green emission with a peak position of 495 nm and a peak width of 32 nm due to the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ion. An LED package (chip size $5.6{\times}3.0mm$) is fabricated with a mixture of our green $BaSi_2O_2N_2$, and yellow $Y_3Al_5O_{12}$ and red $Sr_2Si_5N_8$ phosphors. The color rendering index (90) is higher than that of the mixture without our green phosphor (82), which indicates that this is an excellent green candidate for white LEDs with a deluxe color rendering index.

A Design of Ultra Compact S-Band PCM/FM Telemetry Transmitter (초소형 S-대역 PCM/FM 텔레메트리 송신기 설계 및 제작)

  • Jun, Ji-ho;Park, Ju-eun;Kim, Seong-min;Min, Se-hong;Lee, Jong-hyuk;Kim, Bok-ki
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.50 no.11
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    • pp.801-807
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    • 2022
  • In this paper, we propose an ultra compact S-Band PCM/FM telemetry transmitter. The equipment is compact, so it can be applied to a limited space and capable of stable data transmission was designed and manufactured even with specifications set differently for each operating environment and system. RF direct conversion structure is used for the miniaturization of equipment, an RF transmission board, Power distribution board, and a signal processing board were implemented on a single PCB, so that the function of the transmitter could be performed with a minimum device. According to the target specification, variable output of 1~10W and variable data rate of 390kbps~12.5Mbps is possible in S-Band(2,200~2,400MHz) without degradation of performance. To verify the performance of the equipment, the RF performance test and BER measurement test were performed after the equipment was manufactured. It was confirmed that the OBW, null-to-null bandwidth, 1st IMD, Spurious emission, Phase noise specification of the PCM/FM modulated signal which is presented by the IRIG standard were satisfied, and we can confirm the data received using the transmitter inspection equipment were transmitted normally without distortion.

Geologic Structure of the Anatolian Peninsula: Tectonic Growth of Collisional Continental Margins (아나톨리아 반도의 지질구조: 대륙 충돌에 따른 구조적 성장)

  • Ryu, In-Chang
    • Economic and Environmental Geology
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    • v.45 no.4
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    • pp.465-476
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    • 2012
  • The Anatolia peninsula consists of several continental fragments that include the Pontide Block in north and the Anatolide-Touride Block in south as well as the Arabian Platform in southeast. These continental blocks were joined together into a single landmass in the late Tertiary. During most of the Phanerozoic these continental blocks were separated by paleo-oceans, such as Paleo-Tethys and Neo-Tethys. The Pontide Block in north show Laurasian affinities, and was only slightly affected by the Alpide orogeny; they preserve evidence for the Variscan and Cimmeride orogenies. The Pontic Block is composed of the Strandja, Istanbul and Sakarya zones that were amalgamated into a single terrane by the mid Cretaceous times. The Anatolide-Tauride Block in south shows Gondwana affinities but was separated from Gondwana in the Triassic and formed an extensive carbonate platform during the Mesozoic. The Anatolide-Tauride Block was intensely deformed and partly metamorphosed during the Alpide orogeny; this leads to the subdivision of the Anatolide-Tauride Block into several zones on the basis of the type and age of metamorphism and deformation. The Arabian Platform in southeast forms the northernmost extension of the Arabian Plate that shows a stratigraphy similar to the Anatolide-Tauride Block with a clastic-carbonate dominated Palaeozoic and a carbonate dominated Mesozoic succession. A new tectonic era started in Anatolia Peninsula in the Oligocene-Miocene after the final amalgamation of these continental blocks and plate. This neotectonic phase is characterized by extension, and strike-slip faulting, continental sedimentation, and widespread calcalkaline magmatism, which played a very important role in producing beautiful landscapes of the Anatolia Peninsula today.

A Study on Polynomial Pre-Distortion Technique Using PAPR Reduction Method in the Next Generation Mobile Communication System (차세대 이동통신 시스템에 PAPR 감소기법을 적용한 다항식 사전왜곡 기법에 관한 연구)

  • Kim, Wan-Tae;Park, Ki-Sik;Cho, Sung-Joon
    • Journal of Advanced Navigation Technology
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    • v.14 no.5
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    • pp.684-690
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    • 2010
  • Recently, the NG(Next Generation) system is studied for supporting convergence of various services and multi mode of single terminal. And a demand of user for taking the various services is getting increased, for supporting these services, many systems being able to transmit a large message have been appeared. In the NG system, it has to be supporting the CDMA and WCDMA besides the tele communication systems using OFDM method with single terminal An intergrated system can be improved with adopting of SoC technique. For adopting SoC technique on the intergrated terminal, we have to solve the non linear problem of HPA(High Power Amplifier). Nonlinear characteristic of HPA distorts both amplitude and phase of transmit signal, this distortion cause deep adjacent channel interference. We adopt a polynomial pre-distortion technique for this problem. In this paper, a noble modem design for NG mobile communication service and a method using polynomial pre-distorter with PAPR technique for counterbalancing nonlinear characteristic of the HPA are proposed.

The Enhancement of Thermal Stability of Nickel Monosilicide by Ir and Co Insertion (Ir과 Co를 첨가한 니켈모노실리사이드의 고온 안정화 연구)

  • Yoon, Ki-Jeong;Song, Oh-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.6
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    • pp.1056-1063
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    • 2006
  • Thermal evaporated 10 nm-Ni/l nm-Ir/(or polycrystalline)p-Si(100) and 10 nm-$Ni_{50}Co_{50}$/(or polycrystalline)p-Si(100) films were thermally annealed using rapid thermal annealing fur 40 sec at $300{\sim}1200^{\circ}C$. The annealed bilayer structure developed into Ni(Ir or Co)Si and resulting changes in sheet resistance, microstructure, phase and composition were investigated using a four-point probe, a scanning electron microscopy, a field ion beam, an X-ray diffractometer and an Auger electron spectroscope. The final thickness of Ir- and Co-inserted nickel silicides on single crystal silicon was approximately 20$\sim$40 nm and maintained its sheet resistance below 20 $\Omega$/sq. after the silicidation annealing at $1000^{\circ}C$. The ones on polysilicon had thickness of 20$\sim$55 nm and remained low resistance up to $850^{\circ}C$. A possible reason fur the improved thermal stability of the silicides formed on single crystal silicon substrate is the role of Ir and Co in preventing $NiSi_2$ transformation. Ir and Co also improved thermal stability of silicides formed on polysilicon substrate, but this enhancement was lessened due to the formation of high resistant phases and also a result of silicon mixing during high temperature diffusion. Ir-inserted nickel silicides showed surface roughness below 3 nm, which is appropriate for nano process. In conclusion, the proposed Ir- and Co- inserted nickel silicides may be superior over the conventional nickel monosilicides due to improved thermal stability.

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A topological metal at the surface of an ultrathin BiSb alloy film

  • Hirahara, T.;Sakamoto, Y.;Saisyu, Y.;Miyazaki, H.;Kimura, S.;Okuda, T.;Matsuda, I.;Murakami, S.;Hasegawa, S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.14-15
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    • 2010
  • Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

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Fabrication and characterization of InGaAsP/InP multi-quantum well buried-ridge waveguide laser diodes (Buried-Ridge Waveguide Laser Diode 제작 및 특성평가)

  • 오수환;이지면;김기수;이철욱;고현성;박상기
    • Korean Journal of Optics and Photonics
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    • v.14 no.6
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    • pp.669-673
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    • 2003
  • We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.

“Aluminium Nitride Technology-a review of problems and potential"

  • Dryburgh, Peter M.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.75-87
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    • 1996
  • This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

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Biological Functions of N- and O-linked Oligosaccharides of Equine Chorionic Gonadotropin and Lutropin/Chorionicgonadotropin Receptor

  • Min, K. S.
    • Proceedings of the KSAR Conference
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    • 2000.10a
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    • pp.10-12
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    • 2000
  • Members of the glycoprotein family, which includes CG, LH, FSH and TSH, comprise two noncovalently linked $\alpha$- and $\beta$-subunits. Equine chorionic gonadotropin (eCG), known as PMSG, has a number of interesting and unique characteristics since it appears to be a single molecule that possesses both LH- and FSH-like activities in other species than the horse. This dual activity of eCG in heterologous species is of fundamental interest to the study of the structure-function relationships of gonadotropins and their receptors. CG and LH $\beta$ genes are different in primates. In horse, however, a single gene encodes both eCG and eLH $\beta$-subunits. The subunit mRNA levels seem to be independently regulated and their imbalance may account for differences in the quantities of $\alpha$ - and $\beta$ -subunits in the placenta and pituitary. The dual activities of eCG could be separated by removal of the N-linked oligosaccharide on the $\alpha$-subunit Asn 56 or CTP-associated O-linked oligosaccharides. The tethered-eCG was. efficiently secreted and showed similar LH-like activity to the dimeric eCG. Interestingly, the FSH-like activity of the tethered-eCG was increased markedly in comparison with the native and wild type eCG. These results also suggest that this molecular can implay particular models of FSH-like activity not LH-like activity in the eCG/indicate that the constructs of tethered molecule will be useful in the study of mutants that affect subunit association and/or secretion. A single-chain analog can also be constructed to include additional hormone-specific bioactive generating potentially efficacious compounds that have only FSH-like activity. The LH/CG receptor (LH/CGR), a membrane glycoprotein that is present on testicular Leydig cells and ovarian theca, granulosa, luteal, and interstitial cells, plays a pivotal role in the regulation of gonadal development and function in males as well as in nonpregnant and pregnant females. The LH/CGR is a member of the family of G protein-coupled receptors and its structure is predicted to consist of a large extracellular domain connected to a bundle of seven membrane-spanning a-helices. The LH/CGR phosphorylation can be induced with a phorbol ester, but not with a calcium ionophore. The truncated form of LHR also was down-regulated normally in response to hCG stimulation. In contrast, the cell lines expressing LHR-t63I or LHR-628, the two phosphorylation-negative receptor mutant, showed a delay in the early phase of hCG-induced desensitization, a complete loss of PMA-induced desensitization, and an increase in the rate of hCG-induced receptor down-regulation. These results clearly show that residues 632-653 in the C-terminal tail of the LHR are involved in PMA-induced desensitization, hCG-induced desensitization, and hCG-induced down-regulation. Recently, constitutively activating mutations of the receptor have been identified that are associated with familial male-precocious puberty. Cells expressing LHR-D556Y bind hCG with normal affinity, exhibit a 25-fold increase in basal cAMP and respond to hCG with a normal increase in cAMP accumulation. This mutation enhances the internalization of the free and agonist-occupied receptors ~2- and ~17-fold, respectively. We conclude that the state of activation of the LHR can modulate its basal and/or agonist-stimulated internalization. Since the internalization of hCG is involved in the termination of hCG actions, we suggest that the lack of responsiveness detected in cells expressing LHR-L435R is due to the fast rate of internalization of the bound hCG. This statement is supported by the finding that hCG responsiveness is restored when the cells are lysed and signal transduction is measured in a subcellular fraction (membranes) that cannot internalize the bound hormone.

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