• Title/Summary/Keyword: single pass

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Stopband-Extended and Size-Miniaturized Low-Pass Filter with Three Transmission Zeros

  • Li, Lin;Bao, Jia;Du, Jing-Jing;Wang, Yaming
    • ETRI Journal
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    • v.36 no.2
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    • pp.286-292
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    • 2014
  • This paper presents a compact structure composed of an upper high-impedance transmission line, a middle extended parallel coupled line, and a pair of inter-coupled symmetrical stepped impedance stubs. Detailed investigation into this structure based on an equivalent circuit analysis reveals that this proposed structure exhibits a quasi-elliptic low-pass filtering response with three transmission zeros. Moreover, the positions of the three transmission zeros can be tuned and reallocated flexibly by choosing the proper circuit parameters. Finally, the design concept is validated through the design, fabrication, and measurement of two exemplary low-pass filters (LPFs) with one single unit and two cascaded asymmetric units. The measured results agree well with the simulated results. In addition, in the range of $1.42f_c$ to $7.03f_c$, the fabricated quasi-elliptic LPFs experimentally demonstrate a very wide upper-stopband of 20 dB using a compact size of only $0.0089{\lambda}_g{^2}$, where ${\lambda}_g$ is the guided wavelength of a $50{\Omega}$ transmission line at the central frequency.

A decentralized adaptive model following control scheme for a class of interconnected continuous system (일련의 상호연결된 연속시간 시스템의 비집중 적응 모델 추종 제어 방식)

  • Kim, Byung-Yeun;Lyou, Joon
    • 제어로봇시스템학회:학술대회논문집
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    • 1991.10a
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    • pp.1068-1072
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    • 1991
  • This paper presents a decentralized model reference adaptive control scheme for an interconnected continuous linear system composed of a number of single-input single-output subsystems in which outgoing interactions pass through the measurement channel and are subject to bounded external disturbance. The scheme can treat the unknown strength of interactions as well as the uncertainty of subsystems.

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On Decentralized Aadaptive Controller Design

  • Lyou, Joon
    • 제어로봇시스템학회:학술대회논문집
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    • 1992.10b
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    • pp.140-145
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    • 1992
  • This paper presents a decentralized model reference adaptive control scheme for an interconnected linear system composed of a number of single-input single-output subsystems in which outgoing interactions pass through the measurement channel and are subjected to bounded external disturbances. The scheme can treat the unknown strength of interactions as well as uncertainties in subsystem dynamics, and allows for the case when the relative degree of each decoupled subsystem does not exceed two.

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Decentralized Adaptive Controller Design for a Class of Interconnected Continuous Systems (일련의 상호연결된 연속시간 시스템에 대한 비집중적응 제어기의 설계)

  • Lyou, Joon;Kim, Byung-Yeun
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.29B no.10
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    • pp.53-58
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    • 1992
  • This paper presents a decentralized model reference adaptive control scheme for an interconnected linear system composed of a number of single-input single-output subsystems in which outgoing interactions pass through the measurement channel and are subjected to bounded external disturbances. The scheme can treat the unknown strength of interactions as well as uncertainties in subsystem dynamics, and allows for the case when the relative degree of each decoulped subsystem does not exceed two.

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Lp-Bp 변환에 의한 6계 RC능력 B. P. F의 구성

  • 조한형
    • Proceedings of the Korean Institute of Communication Sciences Conference
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    • 1983.04a
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    • pp.41-44
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    • 1983
  • In this paper, an RC active filter having 6th-order Baud pass characteristics using single amplifier by 게-BP transformation is proposed and designed. The number of element is minimized as possible as and experimental results are reasonably good.

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Single Pass Printing of Picoliter Droplets for Flexible Display Applications

  • Schoeppler, Martin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.135-137
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    • 2009
  • After setting the gold standard for both industrial dropon-demand inkjet printheads and R&D printers for functional materials printing, FUJIFILM Dimatix has developed a printhead with the highest jetting frequency ever obtained. Operating at 100 kHz, the MEMS fabricated SAMBA printhead expands the capabilities of fabrication methods for display applications.

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Cumulative Angular Distortion Curve of Multi-Pass Welding at Thick Plate of Offshore Structures

  • Ha, Yunsok;Choi, Jiwon
    • Journal of Advanced Research in Ocean Engineering
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    • v.1 no.2
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    • pp.106-114
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    • 2015
  • In the fabrication of offshore oil and gas facilities, the significance of dimension control is growing continuously. But, it is difficult to determine the deformation of the structure during fabrication by simple lab tests due to the large size and the complicated shape. Strain-boundary method (a kind of shrinkage method) based on the shell element was proposed to predict the welding distortion of a structure effectively. Modeling of weld geometry in shell element is still a difficult task. In this paper, a concept of imaginary temperature pair is introduced to handle the effect of geometric factors such as groove shape, plate thickness and pass number, etc. Single pass imaginary temperature pair formula is derived from the relation between the groove area and the FE mesh size. By considering the contribution of each weld layer to the whole weldment, multi-pass imaginary temperature is also derived. Since the temperature difference represents the distortion increment, cumulative distortion curve can be drawn by integrating the temperature difference. This curve will be a useful solution when engineers meet some problems occurred in the shipyard. A typical example is shown about utilization of this curve. Several verifications are conducted to examine the validity of the proposed methodology. The applicability of the model is also demonstrated by applying it to the fabrication process of the heavy ship block. It is expected that the imaginary temperature model can effectively solve the modeling problem in shell element. It is also expected that the cumulative distortion curve derived from the imaginary temperature can offer useful qualitative information about angular distortion without FE analysis.

The Analysis of Dual Resonant Iris for Designing Waveguide Band-Pass Filter (대역 통과 도파관 여파기 설계를 위한 이중 공진 아이리스 해석)

  • Choi, Jin-Young;Kim, Byung-Mun;Cho, Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.9
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    • pp.904-911
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    • 2011
  • This paper deals with transmission characteristics of a new dual resonant structure for designing waveguide band-pass filter. The structure which has a pass-band between two adjacent stop-bands in a single body consists of circular ridged aperture and four armed conducting patch. The dual resonant behavior of the structure can be represented by a combination of LC series and parallel resonant circuits. Also these resonant properties can be easily controlled by varying the geometry of the aperture and four armed conducting patch. Actually, the structure is fabricated on the microstrip substrate by use of etching technique so that it is formed an iris type resonator which can be easily put into the transverse plane of the waveguide. We use WR-90 standard waveguide, adapters, and VNA(vector network analyzer) to measure the resonant characteristics of the structure. It is very useful to design and to improve the cutoff skirts characteristics in the waveguide band-pass filter design area.

Electrical Characteristics of SRAM Cell with Stacked Single Crystal Silicon TFT Cell (Stacked Single Crystal Silicon TFT Cell의 적용에 의한 SRAM 셀의 전기적인 특성에 관한 연구)

  • Kang, Ey-Goo;Kim, Jin-Ho;Yu, Jang-Woo;Kim, Chang-Hun;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.4
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    • pp.314-321
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    • 2006
  • There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.