• Current Photovoltaic Research
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• v.6 no.4
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• pp.94-101
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• 2018

Light elevated temperature induced degradation (LeTID) was noted as an issue in multi-crystalline silicon solar cells (MSSC) by Ram speck in 2012. In contrast to light induced degradation (LID), which has been researched in silicon solar cells for a long time, research about both LeTID and the mechanism of LeTID has been limited. In addition, research about LeTID in single-crystalline silicon solar cells (SSSC) is even more limited. In order to improve understanding of LeTID in SSSC with a passivated emitter rear contact (PERC) structure, we fabricated four group samples with boron and oxygen factors and evaluated the solar cell characteristics, such as the cell efficiency, $V_{oc}$, $I_{sc}$, fill factor (FF), LID, and LeTID. The trends of LID of the four group samples were similar to the trend of LeTID as a function of boron and oxygen.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.27 no.7
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• pp.375-379
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• 2015

A proper estimate of solar cell efficiency is of great importance for the feasibility analysis of solar cell power plant development. Since solar cell efficiency depends on temperature, several methods have been introduced to measure it by operating temperature modulation. However, the methods either rely on the external environment or need expensive equipment. In this paper, a thermoelectric module was used to control the operating temperature of crystalline silicon solar cells effectively and precisely over a wide range. The output characteristics of crystalline silicon solar cells in response to operating temperatures from $-5^{\circ}C$ to $100^{\circ}C$ were investigated experimentally. Their efficiencies decreased as the temperature rose, since the decrease in the open circuit voltage and fill factor exceeded the increase in the short circuit current. The maximum power temperature coefficient of the single crystalline solar cell was more sensitive to temperature change than that of the polycrystalline solar cell.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.245-248
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• 2011

Many researches have been carried out to improve light absorption in the crystalline silicon solar cell fabrication. The rear reflection is applied to increase the path length of light, resulting in the light absorption enhancement and thus the efficiency improvement mainly due to increase in short circuit current. In this paper, we manufactured the silicon solar cell using the mono crystalline silicon wafers with $156{\times}156mm^2$, 0.5~3.0 ${\Omega}{\cdot}cm$ of resistivity and p-type. After saw damage removal, the dielectric film ($SiN_x$)on the back surface was deposited, followed by surface texturing in the KOH solution. It resulted in single-side texturing wafer. Then the dielectric film was removed in the HF solution. The silicon wafers were doped with phosphorus by $POCl_3$ with the sheet resistance 50 ${\Omega}/{\Box}$ and then the silicon nitride was deposited on the front surface by the PECVD with 80nm thickness. The electrodes were formed by screen-printing with Ag and Al paste for front and back surface, respectively. The reflectance and transmittance for the single-sided and double-sided textured wafers were compared. The double-sided textured wafer showed higher reflectance and lower transmittance at the long wavelength region, compared to single-sided. The completed crystalline silicon solar cells with different back surface texture showed the conversion efficiency of 17.4% for the single sided and 17.3% for the double sided. The efficiency improvement with single-sided textured solar cell resulted from reflectance increase on back surface and light absorption enhancement.

• Journal of Energy Engineering
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• v.21 no.3
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• pp.243-248
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• 2012

In this study, The report analysed the characteristics of power drop and damage of surface in solar cell through high temperature and humidity test. The solar cells were tested during the 1000hr in $85^{\circ}C$ temperature and 85% humidity conditions, that excerpted standard of PV Module(KS C IEC-61215). An analysis of the cell surface through EL(Electroluminescence), the cell has partly change of surface in yearly. Single-crystalline Solar cell efficiency is decreased from 17.7% to 15.6% and decreasing rate is 11.9%. On the other hand, Poly-crystalline Solar cell efficiency is decreased from 15.5% to 14.0% and decreasing rate is 9.3%. A comparison of the fill factor for analysis of electro characteristic in yearly, Single-crystalline Solar cell efficiency is decreased from 78.7% to 78.1% and decreasing rate is 4.7%. On the other hand, Poly-crystalline Solar cell efficiency is decreased from 78.1% to 76.7% and decreasing rate is 1.8%. Single-crystalline has more bigger power drop than poly-crystalline by the silicon purity and silicon atom arrangement. Also, FF decreasing rate has more bigger drop than efficiency decreasing rate for the reason that the damage of surface by exterior environmental factor is the more influence in cell than other reason that is decreasing FF by damage of p-n junction.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.237-242
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• 2012

At present, crystalline solar cells take up a significant percentage of the solar industry. The ways of increasing the efficiency of crystalline solar cell are texturing and AR(Anti-Reflection) coating, and the purpose of these technologies is to increase the amount of available light on the solar cell by reducing the reflectivity. The reflectance of crystalline silicon solar cell combined with such technologies will be able to predict using the proposed simulation in this paper. The simulation algorithm was made using MATLAB, and it is a combination of the theories of reflection in textured wafer and in anti-reflection coated wafer. The simulation results were divided into three wavelength band and were compared with actual reflectance measured by a spectrometer. The wavelength band from 300 to 380 was named ultraviolet region and the wavelength band from 380 to 780 is named visible region. Finally, the wavelength band from 780 to 1200 named infrared region. When compared with measured reflection data, the simulation results had a small error from 0.4 to 0.5[%] in visible region. The error occurred in the rest two regions is larger than visible region. The extreme error occurred the infrared region is due to internal reflection effect, but in the ultraviolet region, the rationale on reduction phenomenon of reflectance occurred in small range did not proved. If these problem will be solve, this simulation will have high reliability more than now and be able to predict the reflectance of solar cells.

• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.16-21
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• 2010

It is well-known that Boron-doped Cz Si solar cells suffer light-induced degradation due to boron-oxygen defect which is responsible of a reduction in lifetime and hence efficiency. In this paper, we assume that PV solar cell has been connected with variable load to account the real operating condition and it shows different light-induced degradation of Si solar cell. To evaluate the effect of light-induced degradation for solar cell with various load, Single crystalline solar cells are connected with open and short circuits during light exposure. Isc-Voc curve evaluate light induced degradation of solar cells and the reason is explained as a change for serial resistance. From the results, Electrical characteristics of solar cells show better performance under short circuit conditions, after light exposure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.234-234
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• 2010

Most high efficiency silicon solar cells use a passivated selective emitter. It have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. Most of the selective emitter process require expensive extra masking, etching steps, and a double diffusion process making selective emitters not cost effective. In this paper, we study method for single diffusion step selective emitter process as an alternative to not cost effective double diffusion process. Cost effective selective emitter that the efficiency should be increased significantly (mare than 0.2%) and that the process should simple, robust and cheap.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.433-437
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• 2021

As the demand for new and renewable energy increases due to the depletion of fossil fuels, solar power generation, a core energy source for new and renewable energy, requires research on solar modules for high output power generation. In this paper, the electrical characteristics of solar cell strip at the edge and in the center of single-crystal silicon having a semi-square shape were analyzed. The cell strip located in the center showed the efficiency increase by 0.26% compared to the cell strip at the edge of the solar cell. A shingled photovoltaic module was manufactured for each cell strip. As a result, the output power of the module using the cell strip located in the center was higher by 0.992%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.4-5
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• 2006

This paper represents modeling and optimization techniques for solar cell process on single-crystalline float zone (FZ) wafers with high efficiency; There were the four significant processes : i)emitter formation by diffusion, anti-reflection-coating (ARC) with silicon nitride using plasma-enhanced chemical vapor deposition (PECVD); iii)screen-printing for front and back metallization; and iv)contact formation by firing. In order to increase the performance of solar cells, the contact formation process is modeled and optimized. This paper utilizes the design of experiments (DOE) in contact formation to reduce process time, fabrication costs. The experiments were designed by using central composite design which is composed of $2^4$ factorial design augmented by 8 axial points with three center points. After contact formation process, the efficiency of the solar cell is modeled using neural networks. This model is used to analyse the characteristics of the process, and to optimize the process condition using genetic algorithms (GA). Finally, find optimal recipe for solar cell efficiency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.