• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.3-3
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• 2009

In order to investigate the possibility of using mixed rare earth $(Nd_{1/3}Eu_{1/3}Gd_{1/3})Ba_2Cu_3O_{7-x}$ (NEG123) as the superconducting layer of the HTS coated conductor, the NEG123 thin film was deposited epitaxialy on LAO(100) single crystal and IBAD_YSZ metal templates by pulsed laser deposition. Systematic studies were carried out to investigate the influences of deposition parameters of PLD on the micro structure, texture and superconducting properties of NEG-123 coated conductor. Deposition at oxygen partial pressure of 600 mTorr was needed to routinely obtain high quality NEG123 films with $J_c$'s (77K) over 2 MA/$cm^2$ and Tc's over 90K (${\Delta}T{\sim}2\;K$). We verified from magnetization study that the NEG123 has an improved in-field Jc as the field increases at temperatures between 10 K and 77 K compared with Gd123. The $J_c$ (77K, self field) and the value of onset $T_c$ of NEG123 thin film on LAO substrate was $4.0MA/cm^2$ and 92K, respectively. This is the first report, to the best of our knowledge, of coated conductors with NEG123 film as the superconducting layer which have Ic and Jc over 40 A/cm-width and 1.6 MA/$cm^2$ at 77K, self field. This study shows the possibility of using NEG123 film as the superconducting layer of the HTS coated conductor which can be used in high magnetic field power electric devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.31.1-31.1
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• 2009

Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.681-686
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• 1994

Microwave Detector Using $YBa_{2}Cu_{3}O_{7-x}$, Grain Boundary Junction $YBa_{2}Cu_{3}O_{7-x}$ superconductor thin films were deposited on $LaAIO_{3}$ (100) single crystal substrates using a metal organic chemical vapor deposition (MOCVD) method. These films showed the critical temperature of about 9OK and critical current density of over $10^5/A \textrm{cm}^2$at 77K. These films showed granular structure with 0.5~1.5$\mu \textrm{m}$ grains. Bridge-type junctions, 6$\mu \textrm{m}$ in width and 6pm in length, were fabricated using the photolithography and the Ar ion milling techniques. Current-voltage (I-V) characteristics of these junctions with the microwave irradiation at 77K were studied. The critical current densities decreased as the irradiated microwave power increased. When microwaves were irradiated on the bridge at 77K. the I-V charateristics showed constant voltage stcp(Shapiro steps) at $\Delta$=nho/2e.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.86-91
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• 1999

We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.71-75
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• 2023

In this study, inorganic perovskite films with different compositions were grown by thermal chemical vapor deposition depending on the substrate and their optical properties were compared. Inorganic perovskite crystals were grown on SiO₂/Si and c-Al₂O₃ substrates using CsBr and PbBr₂, respectively, under the same growth conditions. Cs₄PbBr₆-CsPbBr₃ crystallites were grown on the SiO₂ with polycrystalline structure, while a CsPbBr₃ (100) dominant thin film was formed on the c-Al₂O₃ substrate with single crystal structure. From the photoluminescence measurement, CsPbBr₃ showed typical green emission centered at 534 nm with a full width at half maximum (FWHM) of about 91 meV. The Cs₄PbBr₆-CsPbBr₃ mixed structure exhibits blue-shifted emission at 523 nm with a narrow FWHM of 63 meV and a fast decay time of 6.88 ns. These results are expected to be useful for application in photoelectric devices such as displays, solar cells, and light sensors based on inorganic metal perovskites.