• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.111-112
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• 2005

To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.251-254
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• 2008

Blue-white reflective cholesteric liquid crystal display was prepared by a unique method of single liquid crystal layer, the combination of yellow color liquid crystal and blue color backplane. The dopant and host combination of chlolesteric liquid crystal affects the color spectrum. The CIE chromaticity coordinates of blue and white are (0.10, 0.16) and (0.29, 0.30), respectively. The relatively low driving voltages of 32 V for blue-white display are obtained.

• 한국결정성장학회지
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• 제7권1호
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• pp.76-80
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• 1997

직경 55 mm의 ZnSe 단결정을 수소분위기에서 seeded chemical vapor transport법에 의해 성장하였고, 성장 parameter들이 결정 결함에 미치는 영향을 조사하였다. Chemical etching에 의한 EPD 측정, X-ray rocking curve 측정, photolumlnescence 측정으로 성장된 단결정의 특성을 평가하였다.

• 한국결정성장학회지
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• 제16권5호
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• pp.189-197
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• 2006

[$AgGaSe_2$] 단결정 박막을 수평 전기로에서 합성한 $AgGaSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. $AgGaSe_2$의 광흡수 스펙트럼으로부터 구한 온도에 의존하는 에너지 밴드갭 $E_g(T)$는 Varshni 공식에 fitting한 결과 $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$를 잘 만족하였다. 성장된 $AgGaSe_2$ 단결정 박막을 Ag, Ga, Se 분위기에서 각각 열처리하여 10K에서 photoluminescience(PL) spectrum을 측정하여 점 결함의 기원을 알아보았다. PL 측정으로 부터 얻어진 $V_{Ag},\;V_{Se},\;Ag_{int}$, 그리고 $Se_{int}$는 주개와 받개로 분류되어졌다. $AgGaSe_2$ 단결정 박막을 Ag 분위기에서 열처리하면 p형으로 변환됨을 알 수 있었다. 또한, Ga 분위기에서 열처리하면 열처리 이전의 PL 스펙트럼을 보이고 있어서, $AgGaSe_2$ 단결정 박막에서 Ga은 안정된 결합의 형태로 있기 때문에 자연 결함의 형성에는 관련이 없음을 알았다.

• 한국재료학회지
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• 제23권12호
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• 한국결정성장학회지
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• 제13권5호
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• 한국결정성장학회지
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• 제26권2호
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• pp.53-57
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• 2016

저항가열 방식으로 제작된 설비를 이용하여 SiC 단결정을 성장하였다. 성장 조건에 따라 결정의 성장 양상이 달랐으며, 원료부의 온도와 결정 성장부의 온도에 따라 각각 온도 설정이 필요함을 알았다. 본 논문에서는 SiC 결정의 성장 온도에 따른 성장 결과에 대하여 고찰해 보았으며, 이에 대한 결과를 보고하고자 한다.

• 한국결정성장학회지
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• 제18권1호
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• pp.1-4
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• 2008

The growth of composite-structured Nd:$GdVO_4$ single crystal rods by the double die EFG method is reported. Two crucibles are combined with an outer and inner die for ascending of different melt. The composite-structured Nd:$GdVO_4$ single crystal rods with a length of 50 mm and an outer diameter of 5 mm including of inner Nd-doped core region with diameter 3 mm were grown successfully. Nd distribution in the, radial direction has graded profile from result of EPMA. Absorption coefficient in the core region at 808 nm was $42cm^{-1}$. Finally, we demonstrated the laser oscillation using our composite crystal and 2-W output was obtained.

• 소성∙가공
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• 제29권3호
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• pp.127-134
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• 2020

It is known that the difference of texture of the polycrystalline Al sheet is not a critical parameter for the formation of aligned nanopore arrays in anodic aluminum oxide (AAO). This will be related to the polycrystalline grain in the Al sheet. The texture of each grain in the polycrystalline Al sheet is different. The mixed textures of grains have the mixing effects on the nanopore structure of the AAO. Thus, the effect of Al texture on the nanopore structure of the AAO was investigated using three types of Al single crystals with (111), (200) and (220) textures in this paper. These three types of AAO layers were fabricated by the two-step anodizing method at 40 V and temperature of 0-5℃ in oxalic acid solution. In the nanopores formed on the AAO, the average area of one nanopore and the average roundness of one nanopore were measured were measured based on the SEM images. In the hexagon obtained by connecting nanopores on the AAO, the average standard deviation of one angle deviated from 120° was measured. In the AAO nanopores with texture of (111), (200) and (220) single crystal samples, the average area of one nanopore of (200) single crystal sample was the widest, followed by (111), (220) single crystals. The average circularity of one nanopore of (200) single crystal sample was the best, followed by (111), (220) single crystals. The average standard deviation of an angle from 120° of (220) single crystal sample was the largest, followed by (111) and (200) single crystals.

• 대한기계학회논문집
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• 제17권1호
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• pp.120-130
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• 1993

본 연구에서는 니켈의 가공시 나타나는 공구의 마멸에 대한 정량화 및 절삭변 수와의 연관성에 대한 연구는 그 자체가 마멸에 대한 데이터 베이스 측면에서 중요하 고, 이러한 접근방법으로는 연구가 거의 이루어지지 않았다는 측면에서도 큰 의미를 갖는다. 본 연구는 특히 경도가 큰 공구인 CBN, 소결 다이아몬드(poly crystal dia- mond 이하 PCD), 단결정 다이아몬드(single crystal diamond 이하 SCD)공구를 사용하 여 니켈의 절삭에서 나타나는 공구의 마멸에 대한 분석을 선행한 후 수집한 정보로부 터 절삭속도, 이송, 절삭깊이 및 공구의 nose반경이 공구의 마멸 및 표면의 성상(su- rface quality)에 미치는 영향에 대하여 고찰하였고 절삭조건의 변화에 따라 마멸에 대한 예상 곡선을 구하였다.