The latest development in the preparation of indium phosphide (InP) poly- crystals and single crystals |
Guohao Ren
(Shanghai Institute of Ceramics)
Kyoon Choi (Korea Institute of Ceramic Engineering and Technology) Eui-Seok Choi (Korea Institute of Ceramic Engineering and Technology) Myung-Hwan Oh (NeosemiTech Corp.) |
1 |
Studies on interface curvature during vertical Brdgman growth of InP in a flat-bottom container
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DOI |
2 |
Growth of longlength 3 inch diameter Fe-doped Inp single crystals
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DOI ScienceOn |
3 |
Inp melts: investigation of wetting between boat materials in Bridgman growth
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DOI ScienceOn |
4 |
Effect of growth parameters on dislocation generation in InP single crystal grown by the veritcal gradient freeze process
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DOI ScienceOn |
5 |
New insight into the origin of twin and grain boundary in InP
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DOI ScienceOn |
6 |
Modeling of high pressure, liquid-encapsulated Czochralski growth of InP crystals
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7 |
Study of the twinning phenomenon in the LEC growth of Ⅲ-Ⅴ compound single crystals
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8 |
A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of Ⅲ-Ⅴ compound semiconductors
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DOI |
9 |
The mechanism of growthtwin formation in zincblend crystals: new insights from a study of magnetic liquid encapsulated Czochralski-grown InP single crystals
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DOI ScienceOn |
10 |
Influence of the solid-liquid interface shape on the defects structure and on the twinning probability of LEC-grown GaAs
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11 |
Theoretical analysis of InP crystal growth experiment performed on-board Russian Foton-11 satellite
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DOI ScienceOn |
12 |
Dislocation densities in Inp single crystals grown under controlled phophorus vapor pressure by the horizontal Bridgman method
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DOI ScienceOn |
13 |
Dislocations and 90-twins in LEC-grown InP crystals
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DOI |
14 |
Inp single crystal growth by the horizontal Bridgman method under cotrolled phosphorus vapor pressure
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DOI |
15 |
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16 |
Liquid encapsulation crystal pulling at high pressures
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17 |
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18 |
Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystal
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DOI ScienceOn |
19 |
Transport phenomena in a high pressure crystal growth system: In situ synthesis for InP melt
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DOI ScienceOn |
20 |
Crystallo-graphic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InP
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DOI ScienceOn |
21 |
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