• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.152-155
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• 2009

Ba-Ferrite single crystals were prepared and the magnetic and thermal properties were characterized by Mossbauer spectroscopy. The single crystal layer was cut in the c-axis and radiated to the surface by ${\gamma}$-rays for Mossbauer spectroscopy. We found out that the spin states in Fe ions were parallel to the ${\gamma}$-rays direction and the whole crystal bulk formed only one crystal with the same spin direction. $M\"{o}ssbauer$ spectra in single crystal have only 4 sets of 4 absorption lines in each Fe site when the ${\gamma}$-rays have the same radiation direction with the c-axis in the crystal, and there was no 2b-site spectrum. The zero absorption of 2b-site means that there was a fast diffusion motion in a double-well atomic potential at room temperature, in which bipyramidal Fe ions have the two minima at each side mirror plane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.223-229
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• 1994

$KTP(KTiOPO_4)$ single crystals have been hydrothermally grown in KOH solutions. Properties and Raman spectra of grown crystal were investigated. The most effective solvents for the crystal growth of KTP were KOH and KF solutions. In this study, the properties of KTP single crystals grown hydrothermally at $500^{\circ}C$ in 9 m KOH solution were measured. The following results were obtained : lattice parameters ; a=1.281 nm and c=1.058 nm, density ; $2.94 g/cm^3$, Vickers hardness ; $562kg/cm^2$, refractive indices ; $n_e=1.740$ and $n_e= 1.747.$ And Raman spectra of hydrothermal growth KTP single crystal have been investigated at room temperature under atmospheric pressure. As a result, the $A_1$ modes agree very well with KTP single crystal of high temperatures solution growth but the behavior of $B_2$ modes were slightly different.

• Journal of Magnetics
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• v.19 no.4
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• pp.333-339
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• 2014

Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

• Korean Journal of Crystallography
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• v.11 no.1
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• pp.16-21
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• 2000

(Yb/sub x/Y/sub 1-x/)Ca₄O(BO₃)₃ single crystals where x=0.3,8,15,20% were grown by Czochralski Method. The crystals grown under the optimum conditions were transparent and colorless with good crystal form. Using polarizing microscope, crystal defects such as parasite crystals and bubbles were detected depending on the composition of melts and pulling rates. The optimum growth parameters for high quality of single crystals were 15∼20 rpm of rotation rate and 2mm/h of pulling rate at the flow rate of 2 l/min of Nitrogen gas. The relationship between crystal axes and optical axes was investigated by optical crystallographic method, polarization technique and single crystal X-ray method. From the spectroscopic measurements, it was confirmed that there were strong absorption bands at 900 and 976.4 nm and strong emission band at 976.4 nm in Yb/sup 3+/ ion doped YCa₄O(BO₃)₃ crystal. For the application of second harmonic generation of 1.064 ㎛ laser, non-linear optical devices with θ=32.32° and Ψ=0°, λ/10 of flatness and the size of 6x8x5.73 mm were fabricated from the grown YCa₄O(BO₃)₃ crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.87-93
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• 1995

Strontium titanate single crystal was grown by floating wne method. Growth conditions are as follows; at air atmosphere, rotation rate of upper and lower shafts were 20 - 25 rpm, 15 - 20 rpm respectively and growth rate was 3 mmlhr. As grown crystal was light brown color and transparent. After annealing, color was faded away. Growth direction was [112] direction and it was confirmed that grown crystal has $SrTiO_3$single phase and stoichiometric composition by XRD and EDS. Etch pit pattern was investigated after chemical etching in $350^{\circ}C$, KOH solution for 5 min and dielectric constant was measured at the range of room temperature ~ $350^{\circ}C$ .

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.57-62
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• 1994

$YbFeCoO_4$ single crystal was grown by floating zone method. The atmospheric condition of the growth was controlled in air and the growth rate was 1~2 mm/hr. After melting the feed rod of the composition of $YbFeCoO_4$, $YbFeCoO_4$ was decomposed to $YbFeCoO_4$ and CoO phase in the initial state of the growth. The liquid composition, however, changed to the direction of the eutectic point along the liquidus line and then stopped at the point in which $YbFeCoO_4$ single crystal could be grown. The growth direction of the crystal was preferred orientation [110], perpendicular to the c-axis in the hexagonal system due to using the polycrystalline seed.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.141-148
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• 2005

It is well known that the general metals have a lot of grain boundaries. The grain boundaries play a negative role to increase the resistivity and to decrease the conductivity. The small resistivity and the large conductivity have been a goal of the material scientists, and no signal noise, perfect signal transfer, and the realization of the real sound are the dream of electronic engineers and audio manias. Generally, oxygen free copper (OFC) and Ohno continuous casting (OCC) copper cables have been used for the purpose of the precise signal transfer and low noise. However they still include a lot of grain boundaries. In our study, we have grown the single crystal by the Czochralski method and succeeded to produce single crystal wires from the crystal in the dimension of $0.5{\times}0.5{\times}2500mm$. The produced wire still possesses very good single crystal properties. We observed the structure of the wire, and measured the resistance and impedance. Glow Discharge Spectrometer (GDS) was used for analyzing the compositions of copper single crystals and commercial copper. Current-Voltage curve, resistance, total harmonic distortion and speaker frequency response were measured for comparing electrical and acoustic properties of two samples.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.180-183
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• 2001

$YVO_{4}$ and Nd:$YVO_{4}$ single crystals have been grown developed Edge-defined film-fed growth (EFG) method and the crystals were measured on optical properties. $YVO_{4}$ and Nd:$YVO_{4}$ single crystal were transparent, high quality due to homogeneity of surface temperature of the melt and stability of meniscus during crystal growth. In transmittance and absorption spectra, Nd:$YVO_{4}$ single crystals had absorption peaks at wavelengths of 532, 593, 753, 808, 888 though $YVO_{4}$ single crystal had a broad transmittance at wavelength ranging from 340 to 1000nm. Also, Nd:$YVO_{4}$ single crystals had emissions of energy at range of 800~900 nm in photoluminescence (PL) spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.141-142
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.9514eV - ($7.24\times10^{-4}$ eV/K)$T^2$/(T + 489 K). After the as-grown $ZnIn_2S_4$ single crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, $V_s$, $Zn_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.