• Title/Summary/Keyword: simulation x

Search Result 1,464, Processing Time 0.033 seconds

Error Analysis of General X-ray Examination by Using Simulation Training (시뮬레이션 교육을 통한 일반 X선 검사의 오류 분석)

  • Seoung, Youl-Hun
    • Journal of the Korean Society of Radiology
    • /
    • v.12 no.7
    • /
    • pp.919-927
    • /
    • 2018
  • The purpose of this study was to present simulation training model for general X-ray examinations and to analyze the errors that occur during the simulation training. From 2012 to 2018, a total of 183 students (77 men and 106 women) participated. The simulated X-ray system used computed radiography (CR) system. The contents of simulation training were patient's care, X-ray examinations accuracy, images stability, etc. As a result, it were found that the patient's position setting error, the accuracy error of the X-ray beam central ray, the image receptor's size and setting error, the error of the grid use, the marking error, and the error of X-ray exposure technical factors. It is expected that improved practical general X-ray examinations training of radiographer will be needed, focusing on these errors, so that we could contribute to the health care of the people by providing precise examinations and high quality medical service.

Experimental Measurement and Monte Carlo Simulation the Correction Factor for the Medium-Energy X-ray Free-air Ionization Chamber

  • Yu, Jili;Wu, Jinjie;Liao, Zhenyu;Zhou, Zhenjie
    • Journal of the Korean Physical Society
    • /
    • v.73 no.10
    • /
    • pp.1466-1472
    • /
    • 2018
  • A key comparison has been made between the air-kerma standards of the National Institute of Metrology (NIM), China, and other Asia Pacific Metrology Programme (APMP) members in the medium-energy X-ray. This paper reviews the primary standard Free-air ionization chamber correction factor experimental method and Monte Carlo simulation method in the NIM. The experimental method and the Monte Carlo simulation method are adopted to obtain the correction factor for the medium-energy X-ray primary standard free-air ionization chamber at 100 kV, 135 kV, 180 kV, 250 kV four CCRI reference qualities. The correction factor has already been submitted to the APMP as key comparison data and the results are in good agreement with those obtained in previous studies. This study shows that the experimental method and the EGSnrc simulation method are usually used in the measurement of the correction factor. In particular, the application of the simulation methods is more common.

A study on the Structure of (62-x)CaO·38Al2O3 ·xBaO Glasses by Molecular Dynamics Simulation (분자동력학법에 의한(62-x)CaO·38Al2O3 ·xBaO 유리의 구조 분석)

  • Lee, Seong-Joo;Kang, Eun-Tne
    • Journal of the Korean Ceramic Society
    • /
    • v.44 no.3 s.298
    • /
    • pp.175-181
    • /
    • 2007
  • Molecular dynamics simulation (MD) of $(62-x)CaO{\cdot}38Al_{2}O_{3}{\cdot}xBaO$ glasses has been carried out using empirical potentials with the covalent term. The simulations closely reproduce the total neutron correlation functions of glass with 5 mol% BaO and physical properties of these glasses such as elastic constants. For these glasses, aluminum is tetrahedrally coordinated by oxygen, but there is a part of five-fold and six-fold coordination of aluminum. There are no major changes to the mid-range structure of glass, as barium is substituted for calcium. To predict the barium coordination number, we have used the bond valence (BV) theory and also compared the results of simulation with Bond valence. The coordination number for oxygen around barium atoms is close to 8 and the average distance of barium and oxygen is nearly 2.80 A. The viscosity of these glasses increases with the content of barium oxide substituted for calcium oxide.

A Simulation Framework for CUDA Computing on Non-x86 Platforms based on QEMU and GPGPU-Sim (비x86 플랫폼 상에서의 CUDA 컴퓨팅을 위한 QEMU 및 GPGPU-Sim 기반 시뮬레이션 프레임워크 개발)

  • Hwang, Jaemin;Choi, Jong-Wook;Choi, Seongrim;Nam, Byeong-Gyu
    • Journal of Korea Society of Industrial Information Systems
    • /
    • v.19 no.2
    • /
    • pp.15-22
    • /
    • 2014
  • This paper proposes a CUDA simulation framework for non-x86 computing platforms based on QEMU and GPGPU-sim. Previous simulators for heterogeneous computing platforms did not support for non-x86 CPU models or CUDA computing platform. In this work, we combined the QEMU and the GPGPU-Sim to support the non-x86 CPU models and the CUDA platform, respectively. This approach provides a simulation framework for CUDA computing on non-x86 CPU models.

Development of Simulation Environment for Proximity Flight Using Simulink and X-Plane (Simulink와 X-Plane을 이용한 모의 근접비행 시뮬레이션 환경 개발연구)

  • Lee, Sanghoon;Park, Chanhwi;Park, Younghoo;Lee, Daewoo
    • Journal of the Korean Society for Aeronautical & Space Sciences
    • /
    • v.49 no.6
    • /
    • pp.465-472
    • /
    • 2021
  • Prior to the actual flight test of the separation-reintegration situation of fixed-wing mother and child UAVs in the air, it is necessary to verify the flight control system of child UAV through simulations. In this paper, we build a simulation environment for the development of a child UAV flight control system in a lab environment based on the wake turbulence of X-Plane. To this end, the aerodynamics analysis of child UAV was performed, and Simulink was used to simulate aircraft, and X-Plane was utilized to implement visualization, wind, gusts, and mother UAV movements. The simulation environment built by performing simulated proximity flights was verified by applying the guidance and control algorithm to the child UAV model within Simulink. Furthermore, the flight results confirm the area in which the child UAV can safely fly from the rear of the mother UAV.

Patient Management Through Simulation Modeling in the Medical Center (시뮬레이션 기법을 이용한 검진센터의 환자관리방안)

  • Lim, Ji-Hye;Kang, Sung-Hong;Kim, Won-Joong
    • Journal of Digital Convergence
    • /
    • v.10 no.4
    • /
    • pp.287-295
    • /
    • 2012
  • This study aims to develop the methods for effective patient flow in the medical center through simulation modeling. To achieve this, we developed three simulation scenarios based on max/min processing time and addition of X-ray by 15 patient tracks from real hospital data. The simulation software used in this study is Flexsim HC 2.7. According to the scenario 1 on 15 patient tracks' LOS by max processing time, there is a great difference between average length of stay(LOS) and max LOS. And average LOS increases greatly depending on the number of patients by the hours. There is no need to add extra X-ray because the addition of X-ray has not much influence in average LOS. It is possible to make good decisions on patient flow management and medical equipment purchasing through simulation modeling. The concrete simulation scenario as a tool for decision support will contribute to efficiency in hospital management.

Image System Using Dual Energy Detector (이중 에너지 검출기를 이용한 영상 시스템)

  • Yeo, Hwa-Yeon
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.11 no.9
    • /
    • pp.3517-3523
    • /
    • 2010
  • Single exposure dual X-ray imaging can be used to separate soft and dense-material images for medical and industrial applications. This study keep focusing baggage inspection system(BIS) specifically. New detector modules for single exposure dual X-ray imaging are consisted of low energy detector (LED) and high energy detector (HED). First, the optimized thickness of copper filter coupled HED to separate low energy and high energy was simulated by the given X-ray energy (140 kVp, 1 mA) using Monte Carlo simulation codes, MCNPX. So as a result of simulation, the copper filter thickness is 0.7 mm. For the design of PIN photodiode, ATLAS device simulation tool was used. 16 channels PIN photodiode of 1.5 mm ${\times}$ 3.2 mm for Dual X-ray imaging detector was fabricated in the process of ETRI. And its dark current and quantum efficiency, terminal capacitance were measured. It was proven that the Lanex Fast B coupled HED were a sufficient candidate to replace the CsI(Tl) commerced in dual X-ray system, since these give a strong signal, overcoming system noise. Finally dual X-ray image was acquired through correction of the LED X-ray Image and the HED X-ray Image.

Physics and current density-voltage characteristics of $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells ($a-Si_{1-x}Ge_x:H$ 화합물(化合物) p-i-n 태양전지(太陽電池)의 물리(物理) 및 전류밀도(電流密度)-전압(電壓) 특성(特性))

  • Kwon, Young-Shik
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1435-1438
    • /
    • 1994
  • The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

  • PDF

A Study of Dopant Distribution in SiGe Using Ion Implantation and Thermal Annealing (SiGe에 이온 주입과 열처리에 의한 불순물 분포의 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.31 no.6
    • /
    • pp.377-385
    • /
    • 2018
  • For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

The Analysis of the He-Ne-Xe Gas Discharge Characteristics in an AC Plasma Display Panel by Two Dimensional Simulation

  • Seo, Jeong-Hyun;Chung, Woo-Joon;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2000.01a
    • /
    • pp.27-28
    • /
    • 2000
  • We examined ($He_x-Ne_{l-x}$)-Xe gas discharge in an AC PDP cell by computer simulation to understand the gas mixing effects. The breakdown and sustain voltage were significantly lowered with the addition of Ne into He-Xe. The luminance and efficiency in ($He_x-Ne_{l-x}$)-Xe also improved when compared with the He-Xe or Ne-Xe gas mixture. The luminance is maximum around $30{\sim}40%$ He addition, while the efficiency shows peak values at 70% He. Two-dimensional numerical simulation was done to explain these results.

  • PDF