• 분석과학
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• 제8권4호
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• pp.745-751
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• 1995

In this paper, several simulated devices were constructed for determining components of organic vapors emitting from decorative materials, daily use chemicals and from common behavior of human beings, such as smoking and cooking. The VOCs were preconcentrated on activated carbon and then desorbed by carbon disulphide. The results were obtained by GC/MS analysis and computer searching. It can be concluded that the categories of the sources and the components of organic vapors in indoor air are very complicated, and different sources of VOCs in indoor air have their own emission characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.240-250
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• 2010

Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

• 대한의용생체공학회:의공학회지
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• 제29권4호
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• pp.295-301
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• 2008

A wireless 3 channel ECG monitoring system was developed so that it could monitor the health and movement state during subject's daily life. The developed system consists of a wireless biomedical signal acquisition device, a personal healthcare server, and a remote medical server. Three experiments were performed to evaluate the accuracy, reliability and operability, applicability during daily life of the developed device. First, ECG signals were measured using the developed device and commercial reference device during sitting and marking time and compared to verify the accuracy of R-R intervals. Second, the reliable data transmission to remote server was verified on two types of simulated emergency event using patient simulator. Third, during five types of motion in daily life, the accuracy of data transmission to remote server using CDMA network was verified on two types of event occurring. By acquiring and comparing subject's biomedical signal and motion signal, the accuracy, reliability and operability, applicability during daily life of the developed device were verified. In addition, PDA-phone based wireless system enabled subject to be monitored without any constraints. Therefore, the developed system is expected to be applicable for monitoring the aged and chronic diseased people and giving first-aid in emergency.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권1호
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• pp.1-11
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• 1999

Hyrdogenated amorphous silicon thin film transistors are used as a pixel switching device of TFT-LCDs and very active research works on a-Si:H TFTs are in progress. Further development of the technology based on a-Si:H TFTs depends on the increased understanding of the device physics and the ability to accurately simulate the characteristics of them. A two-dimensional device simulator based on the realistic and flexible physical models can guide the device designs and their optimizations. A non-uniform finite-difference TFT Simulation Program, TFT2DS has been developed to solve the electronic transport equations for a-Si:H TFTs. In TFT2DS, many of the simplifying assumptions are removed. The developed simulator was used to calculate the transfer and output characteristics of a-Si:H TFTs. The measured data were compared with the simulated ones for verifying the validity of TFT2DS. Also the transient behaviors of a-Si:H TFTs were calculated even if the values of the related parameters are not accurately specified.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.757-758
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• 2009

• Structural Engineering and Mechanics
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• 제81권1호
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• pp.1-9
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• 2022

Due to the frequency and magnitude of some loads produced by gusts of turbulent wind, building floors can develop lateral displacements and significant accelerations which can produce strong inertial forces on structural, non-structural elements and occupants. A device that can help to reduce the floor accelerations is the well-known Tuned Mass Damper (TMD); however, nowadays there is no enough information about its capacity in order to dissipate energy of turbulent wind loads. For this reason, in this paper different buildings with and without TMD are modeled and dynamically analyzed under simulated wind loads in order to study the reduction of peak floor accelerations. The results indicate that peak floor accelerations can be reduced up to 40% when TMD are incorporated in the buildings, which demonstrated that the Tuned Mass Damper is an efficient device to reduce the wind effects on tall buildings.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2022년도 추계학술대회
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• pp.121-122
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• 2022

본 논문은 Nanosheet FET(NSFET)와 FinFET의 구조를 갖는 소자 성능을 조사하기 위해서 3차원 소자 시뮬레이터를 이용하여 시뮬레이션한 결과를 소개한다. NSFET와 FinFET의 채널 도핑 농도에 따른 전류-전압 특성을 시뮬레이션하였고, 그 전류-전압 특성으로부터 추출한 문턱전압, 문턱전압이하 기울기 등의 성능을 비교하였다. NSFET이 FinFET보다 채널 도핑 농도에 따른 전류-전압 특성에서 드레인 전류가 더 많이 흐르며 더 높은 문턱전압을 갖는다. 문턱전압이하 기울기는 NSFET가 FinFET보다 더 가파른 기울기를 갖는다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2011년도 춘계학술대회 논문집
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• pp.1242-1247
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• 2011

This study investigates vertical vibration control method for railway structure by using vertical vibration control device. The device consists of high stiffness polyurethane spring and friction damper recognized by National Center for Earthquake Engineering Research of USA for durability. To confirm the capacity of vertical vibration control, at first, behavior equation is established by considering correlation among the components. Then, hysteresis curve is drawed from behavior equation. By considering both dynamic behaviors and material nonlinearities, more reasonable behavior of the device can be simulated. After that, the Validity of the vibration control trend is proved by FEM(Finite Element Method).

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.2897-2902
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• 2012

New photovoltaic donor materials, 4,4'-(2,2'-bithiazole-5,5'-diyl)bis(N,N-diphenylbenzenamine) (BDT) and 4-(2,2'-bithiazol-5-yl)-N,N-diphenylbenzenamine (BT), were synthesized. A solution processable triphenylamine-containing bithiazole (BDT and BT) was blended with a [6,6]-phenyl $C_{61}$ butyric acid methyl ester (PCBM) acceptor to study the performance of small-molecule-based bulk heterojunction (BHJ) photovoltaic devices. Optimum device performance was achieved after annealing, for device with a BDT/PCBM ratio of 1:4. The open-circuit voltage, short-circuit current, and power conversion efficiency of the device with the aforementioned BDT/PCBM ratio were 0.51 V, 4.10 $mA\;cm^{-2}$, and 0.68%, respectively, under simulated AM 1.5 solar irradiation (100 $mW\;cm^{-2}$).

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권1호
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• pp.23-33
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• 2002

A hysteresis control is widely used to control output current of inverter. A hysteresis bandwidth is affected by system parameters such as source voltage, device on/off time, load inductance and resistance. The frequency limiter is used to protect switching devices overload. In the conventional hysteresis controller, a lock-out circuit with D-latch and timer is used to device protection circuit. But switching delay time and harmonic components are appeared in output current. In this paper the performance of lock-out circuit is tested, and new circuit for switching device fault protection is proposed ad it's performance is simulated.