• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.166-171
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• 2007

We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.528-535
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• 2011

In the present, the formation of shear band under a simple shear deformation is investigated using a rate-independent elastic-plastic constitutive relations. Moreover, the strain gradient terms are incorporated to obtain a non-local plastic constitutive relation, which in turn represented using combined two-back stress hardening model. Then, the continuum damage model is also included to the proposed model. The post-localization behavior are studied by introducing a small imperfection in a work piece. The strain gradient affects the shear localization significantly such that the intensity of shear band decreases as the strain gradient coefficient increases when the J2 flow theory is employed.

• Journal of IKEEE
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• v.26 no.4
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• pp.568-576
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• 2022

Automatic modulation classification(AMC) is a core technique in Software Defined Radio(SDR) platform that enables smart and flexible spectrum sensing and access in a wide frequency band. In this study, we propose a simple yet accurate deep learning-based method that allows AMC for variable-size radio signals. To this end, we design a classification architecture consisting of two Convolutional Neural Network(CNN)-based models, namely main and small models, which were trained on radio signal datasets with two different signal sizes, respectively. Then, for a received signal input with an arbitrary length, modulation classification is performed by augmenting the input samples using a self-replicating padding technique to fit the input layer size of our model. Experiments using the RadioML 2018.01A dataset demonstrated that the proposed method provides higher accuracy than the existing methods in all signal-to-noise ratio(SNR) domains with less computation overhead.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.464-473
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• 1993

The dynamics of phase grating formation with visible light in an optical fiber is investigated. Adopting a simple two-photon local bleaching model, it is shown that the grating self-organize into an ideal grating, where the writing frequency is always in the center of the local band gap, as it evolves. The evolution at each point in the fiber is described in terms of a universal parameter that reduces the coupled partial differential equations describing the system to ordinary differential equatior~s. These equations are used to prove that there exists a fixed point of the grating growth process that corresponds to a perfectly phase-mached grating.

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.4
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• pp.29-34
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• 2002

In this paper, we present a new geometric active contour model based on level set methods introduced by Osher and Sethian for detection of object boundaries or shape and we adopt anisotropic diffusion filtering method for removing noise from original image. In order to minimize the processing time, we use the narrow band method which allows us to perform calculations in the neighborhood of the contour and not in the whole image. Using anisotropic diffusion filtering for each slice, we have the result with reduced noise and extracted exact shape. Volume rendering operates on three-dimensional data, processes it, and transforms it into a simple two-dimensional image.

• Korean Journal of Remote Sensing
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• v.26 no.1
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• pp.21-27
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• 2010

This paper presents a numerical simulation of the radar backscattering from oil spills on ocean surface. At first, a one-dimensionally rough sea surface is numerically generated for a given wind speed at HEBEI SPIRIT accident. Then, an oil-spilled sea surface is represented with a two-layered medium, which is generated by adding a thin low-dielectric oil layer on the randomly-rough highdielectric sea surface. The backscattering coefficients of various oil-spilled sea surfaces are obtained using the Method of Moments and Monte Carlo technique for various surface roughness, oil-layer thicknesses, frequencies, polarizations and incidence angles. The numerical method is verified with theoretical models for simple structures. The reduction of the backscattering coefficients due to the lowdielectric oil-layers on sea surfaces has been analyzed. These numerical results will help to detect any oil spills on sea surfaces, and consequently, to classify SAR images.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.83-90
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• 2000

A simple low-cost and small size 1.88-198 GHz Band RF power amplifier module is developed for IMT2000 repeater. The power amplifier consists of two stage amplifiers that the first stage amplifier is drive amplifier using discrete type P-HEMT (ATF-34143, 800 micron gate width, Agilent Technologies) and the second is power amplifier with 300Bm 1dB gain compression point using GaAs FET(EFA240D-SOT89, 2400 micron gate width, Excelics Semiconductor). this power amplifier module feature a 29.5dBm 1dB gain compression point, 29.5dB gain, 42dBm 3rd order intercept point(OIP3) and -10dB/-l2dB input/output return loss over the 1880-1980 MHz. This PA module is fully integrated using MIC technology into a small size and design by full nonlinear design technologies. The dimensions of this PA module are 42(L) $\times$ 34(W) mm.