• 전기학회논문지
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• 제62권2호
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• pp.208-212
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• 2013

Dye-sensitized solar cells (DSCs) have taken much attention due to their low cost and easy fabrication method compare to silicon solar cells. But research on cost effective DSC is prerequisite for commercialization. Fluorine doped tin oxide (FTO) which have been commonly used for electrode substrate as electron collector occupied most percentage of manufacturing cost. Therefore we studied FTO-less DSC using sputtered Ti deposited glass as photoelectrode instead of FTO to reduce manufacturing cost. Ti films sputtered on the glass for different time, 5 to 20 minutes with decreasing sheet resistance as deposition time increases. A light source illuminated to counter electrode in order to overcome opaque Ti films. The efficiency of DSC (Ti20) made Ti sputtered glass for 20 min as photoelectrode was 5.87%. There are no significant difference with conventional cell despite lower manufacturing cost.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 1996년도 추계학술발표회 논문집
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• pp.161-166
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• 1996

화학적 증착장치를 이용하여 크기 305mm$\times$915mm인 대면적 투명전도 유리기판 위에 비정질 실리콘 태양전지를 제작하였다. p층 제조 후 SiH4 세척과 수소 플라즈마 처리를 하여 I층에 도핑가스가 침투하는 것을 억제했으며 p-i 계면에 buffer층을 적용함으로써 소면적 단접합 태양전지에서 개발전압 0.825V, 충실도 0.73, 변환효율 9.5%인 셀을 제작하였다. 또한 a-Si/a-Si 이중접합 태양전지에서는 개방전압 1.50V, 충실도 0.77인 셀을 제작하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.265-265
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.320.1-320.1
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• 2013

We have investigated the effect of surface passivation for crystalline silicon solar cell using ozone-based atomic layer deposited (ALD) $Al_2O_3$. We examined passivation properties such as uniformity, carrier lifetime, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD). Ozone-based ALD $Al_2O_3$ film shows the best carrier lifetime at lower deposition temperature than $H_2O$-based ALD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• 자원리싸이클링
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• 제20권1호
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• pp.61-68
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• 2011

산세척을 통해 금속급 실리콘을 정련하기 위해 황산, 질산, 염산과 불산의 혼산 용액을 사용하여 $50^{\circ}C$에서 불순물의 제거 거동을 조사하였다. 금속급 실리콘에 함유된 불순물중 붕소는 산세척으로 제거되지 않았고, 농축효과로 인해 처리 후 농도가 종가하였다. 본 실험범위에서 인은 약 60% 정도 제거되었다. 황산과 질산용액으로 처리시 주요 불순 금속의 제거율은 50% 미만으로 정련 효과가 크지 않았다. 염산과 불산의 혼산으로 산세척하면 주요 불순 금속이 90% 정도 제거되었다. 각 산세척조건에서 얻은 실리콘의 순도와 주요 불순 금속들의 제거율에 대한 자료를 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.85-88
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• 2004

Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1218-1223
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• 2004

Porous silicon materials have been shown to have bright prospects for applications in light emitting, solar cell, as well as light- and chemical-sensing devices. In this report, structures of porous silicon prepared by anodic etching in HF-based solution with various etching times were studied in detail by Atomic Force Microscopy and Small Angle X -ray Scattering technique using the high energy beam line at Pohang Light Source in Korea. The results showed the coexistence of the various pores with nanometer and submicrometer scales. For nanameter size pores, the mixed ones with two different shapes were identified: the larger ones in cylindrical shape and the smaller ones in spherical shape. Volume fractions of the cylindrical and the spherical pores were about equal and remained unchanged at all etching times investigated. On the whole uniform values of the specific surface area and of the size parameters of the pores were observed except for the larger specific surface area for the sample with the short etching time. The results implies that etching process causes the inner surfaces to become smoother while new pores are being generated. In all SAXS data at large Q vectors, Porod slope of -4 was observed, which supports the fact that the pores have smooth surfaces.

• 한국결정성장학회지
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• 제18권6호
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• pp.232-236
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• 2008

최근 실리콘 원료의 부족에 따른 가격상승으로 인하여 99.9999% 이상의 순도를 지닌 폴리 실리콘을 더 저렴하게 제조하기 위한 연구가 활발히 진행되고 있다. 본 연구에서는 순도 99%의 금속급 실리콘(MG-Si)을 원료로 산처리와 일방향 응고를 통해 고순도로 정제하는 연구를 수행하였다. MG-Si 럼프를 플레너터리 밀로 분쇄한 후 HCl/$HNO_3$/HF 산 수용액에서 처리하였다. 그 결과 Al, Fe, Ca, Mn 등과 같은 금속 불순물들의 실리콘 내 함량이 크게 감소하면서 실리콘의 순도는 99.995%까지 향상되었다. 정제된 실리콘 분말을 성형한 후 HEM로를 이용하여 용융시킨 뒤, 일방향 응고를 통하여 잉곳을 제조하였다. 성장시킨 다결정 실리콘 잉곳은 $0.3{\Omega}{\cdot}cm$의 비저항과 $3.8{\mu}{\cdot}sec$의 열 운반자 소멸시간(minority carrier life time)을 나타내었다.