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http://dx.doi.org/10.7844/kirr.2011.20.1.061

Removal of Impurities from Metallurigical Grade Silicon by Acid Washing  

Lee, Man-Seung (Department of Advanced Materials Science & Engineering, Mokpo National University)
Kim, Dong-Ho (Innovation Silicon Co Ltd.)
Publication Information
Resources Recycling / v.20, no.1, 2011 , pp. 61-68 More about this Journal
Abstract
Impurity removal from metallurgical grade silicon by acid washing at $50^{\circ}C$ was investigated by employing sulfuric, nitric acid and the mixture of hydrochloric and hydrofluoric acid. Acid washing treatment had no effect on the removal of boron and the concentration of this clement after treatment was rather increased. In our experimental range, the removal percentage of phosphorus was 60%. In the acid washing with sulfuric and nitric acid, the removal percentage of major impurities was below 50%, which indicates that refining effect was not great with these acids. Acid washing with the mixture of hydrochloric and hydrofluoric acid led to removal percentage of higher than 90%. Data on the purity of silicon after acid washing at various conditions are reported.
Keywords
MG-Si; Solar cell; Refining; HCl; HF;
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Times Cited By KSCI : 2  (Citation Analysis)
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