• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.42-49
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• 1999

In this paper, we proposed a simple measurement method to find the behaviors of the fiber-to-waveguide coupler. The polished fiber blocks and planar waveguides on silicon dioxide were fabricated independently and then optically coupled by physical pressure. Several kinds of polymer with different refractive indices were used for waveguide films. The proposed method makes it possible to measure the center wavelength, bandwidth, extinction ratio, and polarization dependence of the coupler during fabrication procedure. The wavelength sensitivity increased with refractive index of polymer. The symmetric planar waveguide structure and isotropic property of guiding materials reduced polarization dependent property. Insertion loss of the coupler was less than 0.5dB. It is expected that our measurement method is useful for developing various optical devices using evanescent coupling between polished fiber and planar waveguide such as optical modulators and filters etc.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.4
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• pp.32-38
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• 2011

This paper describes implementation of the 5.0GHz RF frequency synthesizer with 0.18${\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get excellent performance of high speed and wide tuning range, N-P MOS core structure and 12 step cap banks have been used in design of the VCO. The chip area including pads for testing is $1.1{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.0{\times}0.4mm^2$. Through analysing of the fabricated frequency synthesizer, we can see that it has wide operation range and excellent frequency characteristics.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.5
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• pp.49-54
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• 2009

This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.6
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• pp.87-93
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• 2008

This paper describes implementation of the 5.0GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.1*0.7mm^2$, and the chip area only core for IP in SoC is $1.0*0.4mm^2$. Through comparing and analysing of the designed two kind of the frequency synthesizer, we can conclude that if we improve a litter characteristics there is no problem to use their as IPs.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.4
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• pp.391-398
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• 2010

In this paper, we propose a sensor design by using a polysilicon strain gauge bonded to a metal diaphragm. The fabrication process of the thin polysilicon strain gauges having thicknesses of $50\;{\mu}m$ was established using conventional MEMS technologies; further, the technique of glass frit bonding of the polysilicon strain gauge to the stainless steel diaphragm was established. Performance of the polysilicon strain gauge bonded to the metal cantilever beam was evaluated. The gauge factor, temperature coefficient of resistance (TCR), nonlinearity, and hysteresis of the polysilicon strain gauge were measured. The results demonstrate that the resistance increases linearly with tensile stress, while it decreases with compressive stress. The value of the gauge factor, which represents the sensitivity of strain gauges, is 34.0; this value is about 7.15 times higher than the gauge factor of a metal-foil strain gauge. The resistance of the polysilicon strain gauge decreases linearly with an increase in the temperature, and TCR is $-328\;ppm/^{\circ}C$. Further, nonlinearity and hysteresis are 0.21 % FS and 0.17 % FS, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.1031-1033
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• 2013

Radiation protection, as well as finding the location of the radiation source, such as the Fukushima radiation leak accident, it is important for the early and safe disposal of nuclear accident. The three-dimensional position of the radiation source detection distance of the radiation source can provide additional information to the existing radiation detectors radiation of a two-dimensional position detection function and then it can play a decisive role in the radiation contaminant removal and decontamination work. In this research, three-dimensional semiconductor sensor based on dual radiation detectors radiation source device visible part of the research and development of efficient radiation sensor unit on the design of the shielding structure.The lightweight, high-efficiency radiation source locator implementation was attempted for the structure and thickness of the shielding and collimator to perform the simulation of the radiation shielding for the various parameters of the shape model through design the optimal structure of the MCNP-based heavy-duty tungsten shielding, lead shielding The results of this study, is a compact, lightweight three-dimensional radiation source detection and future of silicon - based sensors will be used in the study.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• Korean Journal of Materials Research
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• v.13 no.2
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• pp.111-114
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• 2003

Effects of substrate materials on the microstructure and the sensitivity of $SnO_2$thin film gas sensors have been studied. Various substrates were studied, such as oxidized silicon, sapphire, polished alumina, and unpolished alumina. It was observed that strong correlation exists between the electrical resistance and the CO gas sensitivity of the manufactured sensors and the surface roughness of $SnO_2$thin films, which in turn was related to the surface roughness of the original substrates. X$SnO_2$thin film gas sensor on unpolished alumina with the highest surface roughness showed the highest initial resistance and CO gas sensitivity. The transmission electron microscopy observation indicated that shape and size of the columnar microstructure of the thin films were not critically affected by the type of substrates.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.269-273
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• 2002

The NASICON solid electrolyte films, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$(1.5< x < 2.3), was prepared from ceramic slurry by modified doctor-blade process. The NASICON solid electrolyte and fabricated sensors, Pt-electrode/NASICON/Carbonate$(Na_2CO_3-K_2CO_3CaCO_3\; system)$ electrode, were investigated to measure phase, microstructure and e.m.f variation for sensing $CO_2$ concentration. The uniform grain size of $2-4{\mu}m$ and major phase of sodium zirconium silicon phosphate phase, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$was identified with X-ray diffraction patterns and scanning electron microscopy, respectively. The Nernst's slope of 84 mV/decade for $CO_2$ concentration from 500 to 8000 ppm was obtained at operating temperature of $400^{\circ}C$.