• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.41-46
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• 1996

The Pd/Pt gate MISFET type hydrogen sensors, for detecting dissolved hydrogen gas in the transformer oil, were fabricated and their characteristics were investigated. These sensors including diffused resister heater and temperature monitoring diode were fabricated on the same chip by a conventional silicon process technique. The differential pair plays a role in minimizing the intrinsic voltage drift of the MISFET. To avoid the drift of the sensors induced by the hydrogen, the gate insulators of both FETs were constructed with double layers of silicon dioxide and silicon nitride. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pt and Pd double metal layers were deposited on the gate insulator. The hydrogen response of the Pd/Pt gate MISFET suggests that the proposed sensor can detect the dissolved hydrogen in transformer oil with 40mV/10ppm of sensitivity and 0.14mV/day of stability.

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.45-53
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• 1994

A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.202-209
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• 1999

Microstrip line was fabricated on the oxidized porous silicon layer which has nearly electrically and chemically identical properties with thermally oxidized silicon layer. Thick oxidized porous silicon layer of few tenth of micrometers was prepared by thermal oxidation of porous silicon layer on silicon substrate. Multi-step thermal oxidation process was used to obtain high Quality and thick oxidized silicon layer and to release thermal stress. Microstrip line was fabricated on the oxidized porous silicon layer. Its microwave characteristics were measured and the availability for MMIC substrate was investigated.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.2
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• pp.28-34
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• 2011

In previous reports, we investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide ($SiO_2$) surface by using only a photolithographic process. In this paper, we have fabricated field effect transistors (FETs) with SWCNT channels by using the technique mentioned above. Also, we have electrically measured gating effects of these FETs under different source-drain voltages ($V_{SD}$). These FETs have been fabricated for sensor applications. Photoresist (PR) patterns have been made on a $SiO_2$-grown silicon (Si) substrate by using a photolithographic process. This PR-patterned substrate have been dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). These PR patterns have been removed by using aceton. As a result, a selectively-assembled SWCNT channels in FET arrays have been obtained between source and drain electrodes. Finally, we have successfully fabricated 4 FET arrays based on SWCNT-channels by using our simple self-assembly technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.245-252
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• 2003

We designed a silicon pressure sensor interface circuit with digital calibration capability. The interface circuit is composed of an analog section and a digital section. The analog section amplifies the weak signal from the sensor and the digital section handles the calibration function and communication function between the chip and outside microcontroller that controls the calibration. The digital section is composed of I2C serial interface, memory, trimming register and controller. The I2C serial interface is optimized to suit the need of on-chip silicon microsensor in terms of number of IO pins and silicon area. The major part of the design is to build a controller circuit that implements the optimized I2C protocol. The designed chip was fabricated through IDEC's MPW. We also made a test board and the test result showed that the chip performs the digital calibration function very well as expected.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.113-119
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• 2000

In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.4
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• pp.325-330
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• 2005

A lever type CO micro gas sensor was fabricated by MEMS technology. In order to heat up the gas sensing material, $SnO_2$, to a target temperature, a micro heater was built on the gas sensor. The heater and electrodes were hanged on the air as a bridge type to minimize the heat loss to the silicon base. The sensing material laid on the heater and electrodes and did not contact with the silicons base. The temperature distribution of micro gas sensor was analyzed by a CFD program, FLUENT. The results showed that the temperature of silicon wafer base was almost similar to that of the room temperature, which indicates that the heat generated at the micro heater heated up effectively the sensing material. The required electric current of micro heater to heat up the sensing material to the target temperature could be predicted.

• Journal of information and communication convergence engineering
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• v.5 no.2
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• pp.116-120
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• 2007

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that $I_{dark}\;is\;{\sim}10^{-13}\;A,\;I_{photo}\;is\;{\sim}10^{-9}\;A\;and\;I_{photo}/I_{dark}\;is\;{\sim}10^4$, respectively. In the case of a-Si:H TFT, it indicates that $I_{on}/I_{off}\;is\;10^6$, the drain current is a few ${\mu}A\;and\;V_{th}\;is\;2{\sim}4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 volts in ITO of photodiode and $70 {\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.819-821
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• 2001

This paper describes a characteristics of MFL according to the position of Hall sensor Magnetic Flux Leakage(MFL) Method is used to detect surface defect in ferromagnetic plate. A plate has a surface defect and magnetizing equipment are producted to perform Non-Destructive Testing(NDT) using MFL. The SM 45C carbon steel plate is adopted to this experiment. there is a artifical defect with a twice of thickness and a half of depth of plate. Magnetizing equipment is composed of yoke made by layer-built of silicon sheet steel, NdFeB magnetic and iron brushes. Detecting defect is performed by MFL NDT using Hall sensor. It is shown that magnetic flux detected by Hall sensor is affected according to the position of Hall sensor through MFL experiment and numerical analysis.