• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.344-348
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• 2016

We developed a 2-channel fiber-optic temperature sensor (FOTS) using a temperature sensing probe, a fiber-optic coupler, transmitting optical fiber, and an optical time domain reflectometer (OTDR). The temperature sensing probe is divided into a sensing probe and a reference probe for accurate thermometry. A sensing probe is composed of a silicon oil, a FC terminator, a brass pipe, and a singlemode optical fiber and the structure of a reference probe is identical with that of the sensing probe excluding a silicon oil. In this study, we measured the modified optical powers of the light signals reflected from the temperature sensing probe placed inside of the water with a thermal variation from 5 to $70^{\circ}C$. Although the optical power of the reference probe was constant regardless of the temperature change, the optical power of the sensing probe decreased linearly as the temperature increased. As experimental results, the FOTS using a subtraction method showed a small difference (i.e., hysteresis) in its response due to heating and cooling. The reversibility and reproducibility of the FOTS were also evaluated.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.334-340
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• 2000

This paper presents the fabrication of a micro electromagnetic flow sensor for the liquid flow rate measurement. The micro electromagnetic flow sensor has some advantages such as a simple structure, no heat generation, a rapid response and no pressure loss. The principle of the micro electromagnetic flow sensor is based on Faraday's law. If conductive fluid passes through a magnetic field, the electromotive force is generated and detected by two electrodes on the wall of the flow channel. The flow sensor consists of two permanent magnets and a silicon flow channel with two electrodes. The dimension of the flow sensor is $9\;mm\;{\times}\;9\;mm\;{\times}\;1\;mm$. The micro flow channel is mainly fabricated by anisotropic etching of two silicon wafers, and the detection electrodes are fabricated by metal evaporation process. The characteristic of the fabricated flow sensor is obtained experimentally. When the flow rates of water with the conductance of $100-200\;{\mu}S/cm$ are 9.1 ml/min and 62 ml/min, the generated electromotive forces are $261\;{\mu}V$ and 7.3 mV, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.6
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• pp.1596-1603
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• 1996

A single body type of fiber-optic current and voltae sensor using a rare earth doped YIG and a bismuth silicon oxide single crystsl is proposed, which is used for simultaneous measurement of the AC electric current and AC electric voltage over the trasmission lines. Experimental results showed that the fiber-optic current sensor has the maximum 7.5% error within the current range of 0A to 400A, and the fiber-optic voltage sensor has the maximum 0.87% error within the current range of 0V to 400V. The output waveforms of proposed fiber-optic sensor system has a good agreement with output waveforms of conductor current and voltage. Experimental results proved that the output of fiber-optic current sensor is not affected by the electric voltage applied to the fiber-optic voltage sensor, and also, that the output of fiber-optic voltage sensor is not affected by the electric current applied to the fiber-optic current sensor.

• Journal of Sensor Science and Technology
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• v.21 no.2
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• pp.121-126
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• 2012

Piezoresistive type contact force sensor array is fabricated by (111) Silicon bulk micromachining for continuous blood pressure monitoring. Length and width of the unit sensor structure is $200{\mu}m$ and $190{\mu}m$, respectively. The gap between sensing elements is only $10{\mu}m$. To achieve wafer level packaging, the sensor structure is capped by PDMS soft cap using wafer molding and bonding process with $10{\mu}m$ alignment precision. The resistance change over contact force was measured to verify the feasibility of the proposed sensor scheme. The maximum measurement range and resolution is 900 mm Hg and 0.57 mm Hg, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.486-486
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• 2013

Silicon nanowire devices fabricated by bottom-up methods are attracted due to their electrical, mechanical, and optical properties. Especially, to functionalize the surface of silicon nanowires by molecules has received interests. The changes in the characteristics of the molecules is delivered directly to the surface of the silicon nanowires so that the silicon nanowire can be utilized as an efficient read-out device by using the electronic state change of molecules. The surface treatment of the silicon nanowire with light-sensitive molecules can change its optical characteristics greatly. In this paper, we present the optical response of a SiNW field-effect-transistor (FET) conjugated with porphyrin molecules. We fabricated a SiNW FET and performed porphyrin conjugation on its surface. The characteristic and the optical response of the device shows a large difference after conjugation while there is not much change of the surface in the SEM observation. It attributed to the existence of few layer porphyrin molecules on the SiNW surface and efficient variation of the surface potential of the SiNW due to light irradiation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.59-65
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• 1993

The boron-doped polycrystalline silicon films which can be used in pressure sensors were fabricated in a high-vacuum resistance heating evaporator. Poly-Si films were deposited on quartz substrates at various temperatures and the boron was doped to the silicon film in a diffusion furnace using BN wafer. The silicon films deposited at $500^{\circ}C$ was amorphous, began to show crystalline at $600^{\circ}C$, and became polycrystalline at $700^{\circ}C$. After doping boron at $900^{\circ}C$for 10 minutes, the resistivity of the films was in the range of $0.1{\Omega}cm~1.5{\Omega}cm$, the boron density was $9.4\times10^{15}~2.1\times{10}^{17}cm^{-3}$, and the grain size was $107{\AA}~191{\AA}$.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1388-1390
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• 1994

A polyimide-based capacitive humidity sensor has been designed and fabricated using silicon integrated-circuit technology, and its performance measured. The sensor showed excellent linearity, low temperature coefficient, and low hysteresis over a wide range of relative humidity and temperature. The signal conditioning circuits for detecting relative humidity and converting it to voltage have been developed based on a charge redistribution between capacitors using switched -capacitors.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.19-27
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• 1993

Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{\times}1.0 mm^{2}$ square size and a $10{\mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{\circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{\circ}C$ for temperature range of $5{\sim}45^{\circ}C$ were obtained.

• Journal of IKEEE
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• v.9 no.1 s.16
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• pp.65-71
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• 2005

Physical signals generated in the real world are transformed into electrical signals through sensors and fed into electronic circuits. The electrical signals input to electronic circuits are in analog form, thus they must be converted to digital signals using an ADC(Analog-Digital Converter) for digital processing. Signal processing circuits and ADCs that are to be integrated on a single chip together with silicon micro sensors should be designed to have less silicon area and less power consumption. This paper proposed a charge redistribution ADC which reduces silicon area considerably. The proposed method achieves 8 bit conversion by performing 4-bit conversion twice. It reduced the area of capacitor array, which takes most of the ADC area, by 1/16 when compared to a conventional method. Though it uses twice the number of clocks as a conventional method, it would be appropriate to be integrated with a silicon pressure sensor on a single chip since it does not demand high conversion rate.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.385-391
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• 2015

In this paper, we propose a new method to infiltrate $Fe_3O_4$-nanoparticles into a porous silicon film and a monitoring technique to detect packing density of nanoparticles within the film. Recently, research to use porous silicon as a drug carrier or a new functional sensor material by infiltrating $Fe_3O_4$-nanoparticles has been extensively performed. However, it is still necessary to enhance the packing density and to develop a monitoring technique to detect the packing density in real time. In this light, we forcibly injected a nanoparticle solution into a rugate-structured free-standing porous silicon (FPS) film by applying a pressure difference between the two sides of the film. We found that the packing density by the pressure-infiltration method proposed in this paper is enhanced, relative to that by the previous diffusion method. Moreover, a continuous shift in wavelength of the rugate reflectance peak measured from the film surface was observed while the nanoparticle solution was being injected. By exploiting this phenomenon, we could qualitatively monitor the packing density of $Fe_3O_4$-nanoparticles within the FPS film with the injection volume of the nanoparticle solution.