• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.20-25
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• 1999

The effect of different plasma surface preparation and oxidation processes for the formation of $SiO_2-Si$(100) interfaces was studied using angle resolved uv-photoelectron spectroscopy. The surface preparation processes included ex situ preclean as well as in situ hydrogen plasma, which were compared to the processes of UHV annealing at high temperature. The spectral position of the oxide valence band features, with respect to the Fermi level. Were found to shift according to the different processes of surface preparation and oxidation. The shifts were analyzed in terms of band bending in the Si. Origins of the spectral shifts were considered to include defects at the $SiO_2Si$ interfaces and surface morphology(roughness) dependent on the surface preparation processes. From comparison of the ARUPS results of the various processes, it was concluded that the interface bonding of the silicon oxide-showed the lowest band bending.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.77-80
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• 2003

Adsorption of glycine on$Si_3N_4$powder surface has been investigated, which is supposed to enhance the formation of passive layer inhibiting oxidation in aqueous solution. In the basic solution, multinuclear surface complexing between Si and dissociated ligands was responsible for the saturated adsorption of glycine. In addition, $CeO_2$-based CMP slurry containing glycine was manufactured and then applied to planarize$SiO_2$and$Si_3N_4$thin film. Owing to the passivation by glycine, the removal rates, Rh, were decreased, however, the selectivities, RE(SiO$_2$)/RR($Si_3N_4$), increased and showed maximum at pH=12. The suppressed oxidation and dissolution by adsorbate were correlated with the dissociation behavior of glycine at different pH and subsequent chemical adsorption.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1295-1297
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• 1993

Properties of oxynitride films oxidized by $N_2O$ gas after thermal oxidation and $N_2O$ oxide films directly oxidized using $N_2O$ gas on the bare silicon wafer have been studied. Through the AES analysis, Nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2O$ oxide has observed. Also, it could be presumed that there are differences in the mechanism of the growth of film by observing film growth. $N_2O$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces Si/oxynitride and Si/$N_2O$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of $N_2O$ oxide and oxynitride films has somewhat higher than those of thermal $SiO_2,\;N_2O$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.62-66
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• 2016

In this study, it was investigated that characteristic of crack-self-healing of hot-pressed SiC. SiC ceramics was sintered with $Al_2O_3$ and $Y_2O_3$ sintering additive by hot press. Sintering was performed in hot-press furnace in flowing argon (Ar), holding for 3 hr under $1950^{\circ}C$ and 50 MPa. The sintered SiC was machined into 3-point bending strength specimen of $3{\times}4{\times}40mm$, and introduced pre-crack by Vickers indentation at 49.6 N. Specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), 3-point bending strength after heat treatment at $1200{\sim}1400^{\circ}C$ for 1~10 hr. The best crack-self-healing ability was achieved 770 MPa 3-point bending strength by heat treatment at $1300^{\circ}C$ for 5 hr.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• ETRI Journal
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• v.27 no.5
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.1-33
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• 2000

Silicon carbide ceramics with sintering additives from the system AlN-Y$_2$O$_3$ can be gas-pressure sintered to theoretical density. While commonly a combination of sesquioxides is used such as Al$_2$O$_3$-Y$_2$O$_3$, the oxynitrid additives offer the advantage that only a nitrogen atmosphere is require instead of a powder. By starting form a mixture of ${\beta}$-SiC and ${\alpha}$-SiC, and by performing dedicated heat treatments after densification, anisotropic grain growth is obtained which leads to a platelet microstructure showing enhance fracture toughness. In the present work, recent improvement of the mechanical behaviour of these materials at ambient and high temperatures is reported. By means of a surface oxidation treatment in air it is possible to obtain four-point bending strengths in excess of 1 GPa, and the strength retention at high temperatures is significantly improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.134-134
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• 2016

CMC(Ceramic Matrix Composites)는 $1500^{\circ}C$ 이상의 고온에서 내열성, 내산화성, 내식성이 우수하여, 초음속 비행체, 가스터빈 엔진 및 원자로용 초고온 부품 등에 수요가 증가하고 있다. 하지만 이러한 특성은 비산소 환경에 국한되는 것으로 약 $400^{\circ}C$ 이상의 산화 분위기에는 탄소섬유가 산화되는 문제로 인하여 적용의 한계를 가지고 있다. 따라서 CMC의 적용범위 확대를 위하여 내산화 코팅으로 CMC의 초고온 산화특성을 개선하는 것이 필수적이며, 장시간 초고온 산화환경 분위기에서 사용되기 위하여 안정적인 코팅기술이 최근 기술개발의 핵심현안으로 부각되고 있다. 본 연구에서는 pack cementation 공정을 이용하여 내산화성이 우수한 SiC 코팅층을 제조하였다. Pack cementation 공정에 사용된 코팅 분말은 57wt.% SiC, 30wt.% Si, 3wt.% B, 10wt.% Al2O3의 비율로 혼합된 것이다. 실험은 3D 직조된 CMC 모재를 혼합분말 내에 침적한 후, Ar 분위기에서 $1600^{\circ}C$, 4~12시간 반응시켜 수 마이크론 두께의 SiC 코팅층을 형성하였다. 더 우수한 산화 특성을 부여하기 위하여 pack 처리된 CMC 표면에 초고온 세라믹인 TaC 소재를 진공플라즈마 코팅 공정으로 적층시켰다. 제조된 코팅층을 SEM, XRD를 이용하여 미세구조 및 결정구조를 분석하였으며, pack cementation에 따른 내산화 특성을 비교 분석하고자 $2000^{\circ}C$에서 산화 실험을 진행하였다. 산화 실험 이후 미세구조 및 결정구조 분석으로 산화거동을 규명하고자 하였다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.9-17
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• 2018

Aluminum (Al) and its alloys have been used widely in a variety of industries such as structural, electronic, aerospace, and particularly automotive industries due to their lightweight characteristic, outstanding ductility, formability, high oxidation and corrosion resistance, and high thermal and electrical conductivity. Al have different kinds of alloys according to the various additional elements system and they should be selected properly depending on their effectiveness and suitability for their particular purpose. The major elements for Al alloys are silicon (Si), magnesium (Mg), manganese (Mn), copper (Cu), and zinc (Zn). In order for Al alloys to use for each industry, it is necessary to study of Al to Al joining and/or the Al to dissimilar materials joining to combine the individual parts into one. Many studies on joining technologies about Al to Al and Al to dissimilar materials have been performed such as press joining, bolted joint, welding, soldering, riveting, adhesive bonding, and brazing. This study reviews a variety of Al alloys and their joining method including its principles and properties with recent trends.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.135-139
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• 2009

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.