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http://dx.doi.org/10.6111/JKCGCT.2016.26.2.062

Characterization of crack self-healing of silicon carbide by hot press sintering  

Kim, Seong-Hoon (Business Cooperation Center, Korea Institute of Ceramic Engineering and Technololgy)
Kim, Kyung-Hun (Business Cooperation Center, Korea Institute of Ceramic Engineering and Technololgy)
Dow, Hwan-Soo (Business Cooperation Center, Korea Institute of Ceramic Engineering and Technololgy)
Park, Joo-Seok (Business Cooperation Center, Korea Institute of Ceramic Engineering and Technololgy)
Kim, Kyung-Ja (Business Cooperation Center, Korea Institute of Ceramic Engineering and Technololgy)
Shim, Kwang-Bo (Division of Materials Science and Engineering, Hanyang University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.26, no.2, 2016 , pp. 62-66 More about this Journal
Abstract
In this study, it was investigated that characteristic of crack-self-healing of hot-pressed SiC. SiC ceramics was sintered with $Al_2O_3$ and $Y_2O_3$ sintering additive by hot press. Sintering was performed in hot-press furnace in flowing argon (Ar), holding for 3 hr under $1950^{\circ}C$ and 50 MPa. The sintered SiC was machined into 3-point bending strength specimen of $3{\times}4{\times}40mm$, and introduced pre-crack by Vickers indentation at 49.6 N. Specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), 3-point bending strength after heat treatment at $1200{\sim}1400^{\circ}C$ for 1~10 hr. The best crack-self-healing ability was achieved 770 MPa 3-point bending strength by heat treatment at $1300^{\circ}C$ for 5 hr.
Keywords
Silicon carbide; Silicon oxide; Crack-self-healing; Hot press; Oxidation;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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