• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1588-1598
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• 1994

The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{\circ}C$~150$0^{\circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1304-1314
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• 1988

An experimental study of the influences of HF concentration, current density, reaction time and the silicon surface, on the formation and properties of porous silicon are reported. The SOI (Silicon-On-Insulator) strip lines with 100 um width are fabricated at room temperature by anodic oxidation of PSL (Porous Silicon Layers). The stress on the silicon island induced by the anodic oxidation can be avoided by the two-step PSL formation technique. At the final step of IC fabrication process, device isolation will be achieved at room temperature by this method.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.93-99
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• 1996

The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by optimizing a porosity of PSL. (author). refs., figs.

• Journal of the Korean institute of surface engineering
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• v.22 no.4
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• pp.215-220
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• 1989

Silicon Nitride whose thickness is about $100\AA$by the ellipsometer was successfully formed by the Plasma reaction. Nitrogen Plasma was formed by applying the 200KHz, 500Watt power between the two electroes and nitridation of silicon was carried out directly on the top of the silicon wafer. Thus Silicon Nitride formed was oxidized to from oxynitrides and their electrical characterlstice were analyzed by measuring I-V curves and capacitances. Through ESCA depth profiles, the chemical composition changes before and after the oxidation wers analyzed.

• Journal of Korea Foundry Society
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• v.29 no.6
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• pp.257-264
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• 2009

The effects of silicon and molybdenum on the temperature-dependent properties of high silicon and high molybdenum ductile cast iron were investigated. Microstructure was composed of ferrite, cell boundary complex carbide, carbide precipitated in the grain and graphite. The number and size of carbide decreased with the increase of silicon content and increased with the increase of molybdenum content, however, the size of cell boundary carbide increased above 0.81wt%Mo. The room temperature tensile strength increased with the increase of silicon and molybdenum contents. That did not increase with the latter with more than 0.8wt%. Meanwhile the high temperature tensile strength showed the similar trend to that of room temperature one, that of the specimen with 0.55wt%Mo was the highest. The $A_1$ transformation temperature increased with the silicon and molybdenum contents, and showed similar tendency with the variation of strength. It was discussed due to the solubility limit of Molybdenum in ferrite, of which value was assumed to be in the vicinity of 0.81wt%Mo. The weight after oxidation at 1,173K showed the result caused by the difference in solubility of molybdenum in the matrix. That and the thickness change after oxidation did not show any consistent trend with the silicon and molybdenum contents.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.4
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• pp.67-72
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• 1989

Room Temperature Plasma Nitridation of silicon was investigated as a new LOCOS (local oxidation of silicon) process in order to reduce the bird's beak length. In $N_2$ plasma formed by 100kHz, 400W AC power, a thin silicon nitride film (<100${\AA}$) was uniformly grown on a silicon substrate. SEM studies showed that the nitride layer formed by this method can effectively protect the silicon from oxidation and reduce the bird's beak length to $0.2{mu}m$ when 4000${\AA}$ field oxide is grown. This is a considerable improvement comparing with 0.7${mu}m,$ the bird's beak, for the conventional LOCOS process using a thick LPCVD nitride. No appreciable crystalline defect could be found around the bird's beak with SEM cross-section afrer Secco etch. Leakage current tests were carried out on the $N^+/P^-$ well and $P^+/N^-$ well diodes formed by this new LOCOS process. The electrical tests indicate that this new process has electrical properties similar or superior to those of the conventional LOCOS process.

• Carbon letters
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• v.12 no.2
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• pp.116-119
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• 2011

C/SiC composites were prepared by boron nitride (BN)-assisted liquid silicon infiltration (LSI), and their anti-oxidation and mechanical properties were investigated. The microstructures, bulk densities, and porosities of the C/SiC composites demonstrated that the infiltration of liquid silicon into the composites improved them, because the layered-structure BN worked as a lubricant. Increasing the amount of BN improved the anti-oxidation of the prepared C/SiC composites. This synergistic effect was induced by the assistance of BN in the LSI. More thermally stable SiC was formed in the composite, and fewer pores were formed in the composite, which reduced inward oxygen diffusion. The mechanical strength of the composite increased up to the addition of 3% BN and decreased thereafter due to increased brittleness from the presence of more SiC in the composite. Based on the anti-oxidation and mechanical properties of the prepared composites, we concluded that improved anti-oxidation of C/SiC composites can be achieved through BN-assisted LSI, although there may be some degradation of the mechanical properties. The desired anti-oxidation and mechanical properties of the composite can be achieved by optimizing the BN-assisted LSI conditions.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.662-668
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• 1994

The physical and electrical characteristics of sub-l0nm thick capacitor dielectrics formed by wet oxidation of silicon nitride(oxide/nitride composite) and by removing the top oxide of oxidized silicon nitride(0xynitride) are described. For the capacitors with an oxide/nitride composite layer, the capacitance decreases sharply, but the breakdown field increases with an increase in the wet oxidation time at $900^{\circ}C$. For the capacitors with oxynitride layers, the values of both the capacitance and the breakdown field increase with increasing wet oxidation time. The reduction of effective thickness and the improved quality of oxynitride film are responsible for the improved capacitance and increased breakdown fields, respectively. In addition, intrinsic TDDB characteristics and early breakdown failure rate of oxynitride film are improved with increasing oxidation time. Consequently, the oxynitride film is suitable for dynamic memories as a thin dielectric film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.30.1-30.1
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• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

• Analytical Science and Technology
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• v.5 no.4
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• pp.359-366
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• 1992

Using micro-Raman spectrometer, we investigated the evaluation of microstress on silicon surface after the local thermal oxidation. The induced stress of silicon surface after local thermal oxidation shows maximum value at the interface of silicon oxide and active area. The smaller the size of active area, the larger stress. From the evaluation of three other device isolation processes, A, B and moB, whose active size has $0.45{\mu}m$ in length, moB process is turned out to have the lowest stress value and the smallest bird's beak effect.