• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.54-54
• /
• 2009

AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.1
• /
• pp.21-26
• /
• 2004

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.3
• /
• pp.235-238
• /
• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.

• Journal of the Korean institute of surface engineering
• /
• v.55 no.3
• /
• pp.143-155
• /
• 2022

Ceramic oxide layers successfully were formed on the surface of cast Al alloys with high Si contents using plasma electrolytic oxidation (PEO) process in electrolytes containing Na₂SiO₃, NaOH, and additives. The microstructure of the oxide layers was systematically analyzed using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), X-ray diffraction patterns (XRD), and energy X-ray dispersive spectroscopy (EDS). XRD analysis indicated that the PEO untreated high-silicon Al alloys (i.e., 17.1 and 11.7 wt.% Si) consist of Al, Si and Al₂Cu phases whereas Al₂Cu phase selectively disappeared after PEO treatment. PEO process yielded an amorphous oxide layer with few second phases including γ-Al₂O₃ and Fe-rich phases. The corrosion behaviors of high-silicon Al alloys treated by PEO process were investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that high-silicon Al alloys treated by PEO process have greater corrosion resistance than high-silicon alloys untreated by PEO process.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.300-300
• /
• 2011

Si oxidation is a key process in developing silicon devices, such as highly integrated metal-oxide-semiconductor (MOS) transistors and antireflection-coating (ARC) on solar cell substrate. Many experimental and theoritical studies have been carried out for elucidating oxidation processes and adsorption structure using ab initio total energy and electronic structure calcultaions. However, the initial oxidation processes at step edge on vicinal Si surface have not been studied using the ReaxFF reactive force field. In this work, strucutural change, charge distribution of oxidized Si throughout the depth from Si surface were observed during oxidation processes on vicinal Si(001) surface inclined by $10.5^{\circ}$ of miscut angle toward [100]. Adsorption energys of step edge and flat terrace were calculated to compare the oxidation reaction at step edge and flat terrace on Si surface.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.2
• /
• pp.45-50
• /
• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

• ETRI Journal
• /
• v.25 no.2
• /
• pp.73-80
• /
• 2003

This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.325-325
• /
• 2011

Very initial stage of oxidation process of Si (001) surface at room temperature (300 K) and high temperature (1200 K) was investigated using large scale molecular dynamics simulation. Reactive force field potential [1] was used for the simulation owing to its ability to handle charge variation as well as breaking and forming of bonds associated with the oxidation reaction. The results show that oxygen molecules adsorb dissociatively or otherwise leave the silicon surface. Initial position and orientation of oxygen molecule above the surface play important role in determining final state and time needed to dissociate. At 300 K, continuous transformation of ion $Si^+$ (or suboxide Si2O) to $Si2^+$ (SiO), $Si3^+$ (Si2O3) and finally to $Si4^+$ (SiO2) clearly observed. High temperature silicon surface provide heat energy that enable oxygen atom to penetrate into deeper silicon surface. The heat energy also retards adsorption process. As a result, transformation of ion $Si^+$ is impeded at 1200 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.4
• /
• pp.242-245
• /
• 2021

In this work, we fabricated oxide on an n-type silicon substrate through local anodic oxidation (LAO) using atomic force microscopy (AFM). The resulting oxide thickness was measured and its correlation with load force, scan speed and applied voltage was analyzed. The surface oxide layer was stripped using a buffered oxide etch. Ohmic contacts were created by applying silver paste on the silicon substrate back face. LAO was performed at approximately 70% humidity. The oxide thickness increased with increasing the load force, the voltage, and reducing the scan speed. We confirmed that LAO/AFM can be used to create both lateral and, to some extent, vertical shapes and patterns, as previously shown in the literature.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.1 no.1
• /
• pp.66-73
• /
• 1991

During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.