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http://dx.doi.org/10.4313/JKEM.2021.34.4.242

Influence of Oxide Fabricated by Local Anodic Oxidation in Silicon  

Jung, Seung-Woo (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University)
Byun, Dong-Wook (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University)
Shin, Myeong-Cheol (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University)
Schweitz, Michael A. (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University)
Koo, Sang-Mo (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.34, no.4, 2021 , pp. 242-245 More about this Journal
Abstract
In this work, we fabricated oxide on an n-type silicon substrate through local anodic oxidation (LAO) using atomic force microscopy (AFM). The resulting oxide thickness was measured and its correlation with load force, scan speed and applied voltage was analyzed. The surface oxide layer was stripped using a buffered oxide etch. Ohmic contacts were created by applying silver paste on the silicon substrate back face. LAO was performed at approximately 70% humidity. The oxide thickness increased with increasing the load force, the voltage, and reducing the scan speed. We confirmed that LAO/AFM can be used to create both lateral and, to some extent, vertical shapes and patterns, as previously shown in the literature.
Keywords
Silicon; Local anodic oxidation; Atomic force microscopy;
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Times Cited By KSCI : 1  (Citation Analysis)
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