• 한국생산제조학회지
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• 제25권1호
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• pp.62-67
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• 2016

This paper presents a silicon nanostructure array embedded in a polymer film. The silicon nanostructure array was fabricated by using basic microelectromechanical systems (MEMS) processes such as photolithography, reactive ion etching, and anisotropic KOH wet etching. The fabricated silicon nanostructure array was transferred into polymer substrates such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), and polycarbonate (PC) through the hot-embossing process. In order to determine the transfer conditions under which the silicon nanostructures do not fracture, hot-embossing experiments were performed at various temperatures, pressures, and pressing times. Transfer was successfully achieved with a pressure of 1 MPa and a temperature higher than the transition temperature for the three types of polymer substrates. The transferred silicon nanostructure array was electrically evaluated through measurements with a semiconductor parameter analyzer (SPA).

• 센서학회지
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• 제27권5호
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• pp.306-310
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• 2018

In order to develop a highly sensitive infrared sensor, it is necessary to develop techniques for decreasing the rate of heat absorption and the transition of the absorption wavelength to a longer wavelength, both of which can be induced by decreasing the pixel size of the bolometer. Therefore, in this study, $1{\mu}m$ hole-arrays with a subwavelength smaller than the incident infrared wavelength were formed on the amorphous silicon-based microbolometer pixels in the absorber, which consisted of a TiN absorption layer, an a-Si resistance layer and a SiNx membrane support layer. We demonstrated that it is possible to reduce the thermal time constant by 16% relative to the hole-patternless bolometer, and that it is possible to shift the absorption peak to a shorter wavelength as well as increase absorption in the $4-8{\mu}m$ band to compensate for the infrared long-wavelength transition. These results demonstrate the potential for a new approach to improve the performance of high-resolution microbolometers.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.323-324
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• 2006

The nanostructure control of $Si_3N_4$ ceramics can be achieved by using fine starting powder and retardation of grain growth. The spark plasma sintering technique is useful to retard the grain growth by rapid heating. In the present work, the change of microstructure was investigated with emphasis on the particle size of starting powder, the amount of sintering additive and the heating schedule. The rapid heating by spark plasma sintering gave the fine microstructure consisting of equiaxed grains with the same size as starting particles. The spark plasma sintering of $Si_3N_4$ fine powder was effective to control the microstrucutre on nano-meter level.

• 통합자연과학논문집
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• 제2권3호
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• pp.202-206
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• 2009

Optical images based on the porous silicon exhibiting photoluminescence have been prepared from an electrochemical etching of n-type silicon wafer (boron-doped,<100> orientation, resistivity $1{\sim}10{\Omega}-cm$) by using a beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. This provides the ability to fabricate complex optical encoding in the surface of silicon.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.4.1-4.1
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• 2008

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.156-161
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• 2011

The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and $23^{\circ}C$, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.

• 통합자연과학논문집
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• 제6권3호
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• pp.183-186
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• 2013

Well defined 1-dimentional (1-D) photonic crystals of polystyrene replicas have been successfully obtained by removing the porous silicon from the free-standing rugate porous silicon/phenylmethylpolysiloxane composite film. Rugate porous silicon was prepared by an electrochemical etching of silicon wafer in HF/ethanol mixture solution. Exfoliated rugate porous silicon was obtained by an electropolishing condition. A composite of rugate porous silicon/phenylmethylpolysiloxane composite film was prepared by casting a toluene solution of phenylmethylpolysiloxane onto the top of rugate porous silicon film. After the removal of the template by chemical dissolution, the phenylmethylpolysiloxane castings replicate the photonic features and the nanostructure of the master. The photonic phenylmethylpolysiloxane replicas are robust and flexible in ambient condition and exhibit an excellent reflectivity in their reflective spectra. The photonic band gaps of replicas are narrower than that of typical semiconductor quantum dots.

• ETRI Journal
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• 제31권6호
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• 한국결정성장학회지
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• 제9권1호
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• pp.89-93
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• 1999

나노 구조를 갖는 다공질 규소의 표면과 투명하고 전도성을 갖는 접촉방법을 얻기 위해 다공질 규소 표면에 CdTe 화합물 박막을 전착시키는 방법을 시도하였다. CdTe 화합물 박막은 1 M의 $CdSO_4$와 1mM의 $TeO_4$가 혼합된 전해액 속에서 전착 전위 2-2.3V(vs. Ag/AgCl)로 다공질규소의 표면에 전착시켰다. X선 회절 측정결과 다공질규소 표면에 CdTe 화합물 박막이 생성되었음이 확인되었고, AES 분석결과 표면에서 약 80nm 깊이까지 Cd 및 Te 원소가 균일하게 존재하였다. 그리고 CdTe 화합물 박막이 전착된 다공질규소의 PL 특성은 발광의 세기는 약간 검소하였고 최대파장값은 고에너지 쪽으로 이동하였다. 이 결과로 보아 CdTe 전착 박막이 나노 구조를 갖는 다공질규소와 투명하고 전도성을 갖는 접촉물질로 이용될 수 있음이 밝혀졌다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.1315-1318
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• 2004

Nano-scale fabrication of silicon substrate in an aqueous solution based on the use of atomic force microscopy was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate easily by a simple scratching process (Tribo-Nanolithography, TNL), has been applied instead of conventional silicon cantilever for scanning. A slant nanostructure can be fabricated by a process in which a thin damaged layer rapidly forms in the substrate at the diamond tip-sample junction along scanning path of the tip and simultaneously the area uncovered with the damaged layer is being etched. This study demonstrates how the TNL parameters can affect the formation of damaged layer and the shape of 3-D structure, hence introducing a new process of proximal nanolithography in aqueous solution.