• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2089-2092
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• 2002

The PID controller have the simple structure and show the comparatively good control performance. Crystal Grower(FF-CZ150) melt polycrystalline silicon at the temperature of about 1450$^{\circ}C$, then grow it into a single crystalline ingot. The automatic diameter control system of the Crystal Grower has a good performance with only PD control. But it contain the integrator in the plant which has a long time delay. In this paper, we show the secondary approximate model and applies time delay controller which has good performance for the plant with long time delay. It will be able to improve the response characteristic against a standard input and a load disturbance.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.334-340
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• 2011

Saw wires have been widely used in industries to slice silicon (Si) ingots into thin wafers for semiconductor fabrication. This study investigated the microstructural and mechanical properties, such as abrasive wear and tensile properties, of a saw wire sample of 0.84 wt.% carbon steel with a 120 ${\mu}M$ diameter. The samples were subjected to heat treatment at different linear velocities of the wire during the patenting process and two different wear tests were performed, 2-body abrasive wear (grinding) and 3-body abrasive wear (rolling wear) tests. With an increasing linear velocity of the wire, the tensile strength and microhardness of the samples increased, whereas the interlamellar spacing in a pearlite structure decreased. The wear properties from the grinding and rolling wear tests exhibited an opposite tendency. The weight loss resulting from grinding was mainly affected by the tensile strength and microhardness, while the diameter loss obtained from rolling wear was affected by elongation or ductility of the samples. This result demonstrates that the wear mechanism in the 3-body wear test is much different from that for the 2-body abrasive wear test. The ultra-high tensile strength of the saw wire produced by the drawing process was attributed to the pearlite microstructure with very small interlamellar spacing as well as the high density of dislocation.

• Resources Recycling
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• v.30 no.4
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• pp.20-26
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• 2021

Solar grade silicon (SoG-Si) has been commercially supplied mainly from off-grade high-purity silicon manufactured for electronic-grade Si (EG-Si). Therefore, for wider application of solar cells, the development of a refining process at a considerably lower cost is required. The most cost-effective and direct approach for producing SoG-Si is to purify and upgrade metallurgical-grade Si (MG-Si). In this study, directional solidification of molten MG-Si was conducted in a high-frequency induction furnace to remove iron from molten Si. The experimental conditions and results were also discussed with respect to the effective segregation coefficient, Scheil equation, and Peclet number. The study showed that when the descent velocity of the specimen decreased, the macro segregations of impurities and ingot purities increased. These results were derived from the decrease in the effective segregation coefficient with the decrease in the rate of descent of the specimen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.91-96
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• 2023

To verify the quality of bubbles during the use of quartz glass crucibles (QC), an appropriate accelerated testing method was proposed. The bubble state of discarded waste crucibles obtained from actual Czochralski (Cz) processes was analyzed, and optimal heat treatment conditions were suggested by varying temperature, pressure, and time using the QC test piece. By subjecting the samples to heat treatment at 1450℃, 0.4 Torr, and 40 hours, it was possible to control the bubble size and density to a similar level as those generated in the actual Cz process. In particular, by selecting a relatively lower pressure of 0.4 Torr compared to the typical range of 10~20 Torr applied in the Cz process, the time required for accelerated bubble formation testing could be reduced. However, it was determined that increasing the heat treatment temperature to 1550℃ led to the phenomenon of Ostwald ripening, resulting in larger bubbles and a rapid decrease in density. Therefore, it was concluded that it was not a suitable condition for the desired b ake test.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.115-122
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• 2005

In the present study, an EMC (Electromagnetic Casting) process, using a segmented Cu cold crucible under a high frequency alternating magnetic field of 20 kHz, was practiced for the fabrication of poly-crystalline Si ingot of 50 mm diameter. The effects of Joule heating and electromagnetic pressure in molten Si were systematically investigated with various processing parameters such as electric current and crucible configuration. A preliminary experimental work was initiated with the pure Al system for the establishment of a stabilized non-contact working condition, and further adapted to the semiconductor-off-grade Si system. A commercialized software such as Opera-3D was utilized in order to simulate electromagnetic pressure and Joule heating. In order to evaluate the meniscus shape of the molten melts, shape parameter was used throughout the research. A segmented graphite crucible, which was attached at the upper part of the cold crucible, was introduced to enhance significantly the heating efficiency of Si melt keeping non-contact condition during continuous melting and casting processes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.169-174
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• 2022

This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment, the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without polytype inclusion. In the case of micro-pipe density was 0.02 ea/cm² and resistivity characteristics was 0.015~0.020 ohm·cm², commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.310-316
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• 2012

The chromaticity of polyethylene glycol (PEG) generated from the recyling of a silicone slurry waste was improved by using activated carbon powder and a carbon filter. The color change of the PEG waste was investigated by changing the amount of adsorbent, adsorption time and temperature. The surface area of activated carbon did not have a significant impact on improving the color of the PEG waste. According to the results for the APHA color variation of the PEG waste changing the amount of the carbon adsorbent, the optimal usage to achieve the low APHA value was 100~150 mg-C/g-PEG. From the investigatnion on the effect of the adsorption temperature range from $25^{\circ}C$ to $100^{\circ}C$, it was found that the optimal temperatures were $40{\sim}50^{\circ}C$ in terms of achieving the lowest APHA value. The variation of the APHA color was investigated by changing the operation condition of the activated carbon filters. The use of ACF was a good way to enhance the chromaticity of the PEG waste. As a result, the APHA value of the PEG waste (APHA=53 at the initial waste) was reduced to be 10 through the ACF purification. It was also confirmed that the performance of the used carbon adsorbent can be recovered by the washing with purified water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.128-135
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• 2022

The inside of a quartz glass crucible for semiconductor processing, called a transparent layer, is manufactured using synthetic silica powder. Bubbles existing in the transparent layer of the crucible cause a problem of reducing the quality of the crucible as well as the yield of the silicon ingot. Therefore, the main goal of the synthetic silica powder, which is the raw material of the transparent layer, is to minimize the bubble generation factor. For this purpose, in the case of synthetic silica powder, it is necessary to minimize silanol groups, carbon and pores. In this study, synthetic silica gel was prepared using the sol-gel method, and changes in carbon content and specific surface area were investigated according to calcination temperature and dwelled time in a two-stage calcination process. The first-stage calcination process was performed between 500℃ and 600℃ and the second-stage calcination process was performed between 1000℃ and 1100℃. The dwelled time was carried out from 10 minutes to a maximum of 12 hours. The carbon content of the powder calcined at 1000℃ for 1 hour was 0.0031 wt.%, and the specific surface area of the powder calcined at 1100℃ for 12 hours was 16.6 m²/g.