• 제목/요약/키워드: silicon content

검색결과 360건 처리시간 0.027초

팽창질석 첨가에 따른 전선용 실리콘 고무의 난연 및 트래킹 특성에 관한 연구 (A Study on Flame Retardancy and Tracking Properties of Expanded Vermiculite Added Silicon Rubber for Wire)

  • 박승호;이성일
    • 한국전기전자재료학회논문지
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    • 제32권3호
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    • pp.213-218
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    • 2019
  • In this study, a high-temperature vulcanizing (HTV) method was used to achieve a shore a hardness of 70. The basic base was composed of 60% silicon gum (GUM) which is a high-viscosity polymer, 30% fumed silica (FS), and 5% of plasticizer. The GUM and FS were mixed well with less than 1% silane to improve rubber strength. Expanded vermiculite was added as a filler at 10%, 15%, and 20%. The curing conditions were $170^{\circ}C$ for 10 min and a molding method was applied. We report herein, the results of inorganic analysis and flame-retardant and tracking tests on the expanded vermiculite. The flame retardance and tracking test outcomes for a shore a hardness of 70 were found to be optimal when the expanded vermiculite content was 10%.

실리콘 전하선택접합 태양전지 적용을 위한 원자층 증착법으로 증착된 VOx 박막의 특성 (Characteristics of Vanadium Oxide Grown by Atomic Layer Deposition for Hole Carrier Selective Contacts Si Solar Cells)

  • 박지혜;장효식
    • 한국재료학회지
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    • 제30권12호
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    • pp.660-665
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    • 2020
  • Silicon heterojunction solar cells can achieve high conversion efficiency with a simple structure. In this study, we investigate the passivation characteristics of VOx thin films as a hole-selective contact layer using ALD (atomic layer deposition). Passivation characteristics improve with iVoc (implied open-circuit voltage) of 662 mV and minority carrier lifetime of 73.9 µs after post-deposition annealing (PDA) at 100 ℃. The improved values are mainly attributed to a decrease in carbon during the VOx thin film process after PDA. However, once it is annealed at temperatures above 250 ℃ the properties are rapidly degraded. X-ray photoelectron spectroscopy is used to analyze the chemical states of the VOx thin film. As the annealing temperature increases, it shows more formation of SiOx at the interface increases. The ratio of V5+ to V4+, which is the oxidation states of vanadium oxide thin films, are 6:4 for both as-deposition and annealing at 100 ℃, and 5:5 for annealing at 300 ℃. The lower the carbon content of the ALD VOx film and the higher the V5+ ratio, the better the passivation characteristics.

Utilising artificial neural networks for prediction of properties of geopolymer concrete

  • Omar A. Shamayleh;Harry Far
    • Computers and Concrete
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    • 제31권4호
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    • pp.327-335
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    • 2023
  • The most popular building material, concrete, is intrinsically linked to the advancement of humanity. Due to the ever-increasing complexity of cementitious systems, concrete formulation for desired qualities remains a difficult undertaking despite conceptual and methodological advancement in the field of concrete science. Recognising the significant pollution caused by the traditional cement industry, construction of civil engineering structures has been carried out successfully using Geopolymer Concrete (GPC), also known as High Performance Concrete (HPC). These are concretes formed by the reaction of inorganic materials with a high content of Silicon and Aluminium (Pozzolans) with alkalis to achieve cementitious properties. These supplementary cementitious materials include Ground Granulated Blast Furnace Slag (GGBFS), a waste material generated in the steel manufacturing industry; Fly Ash, which is a fine waste product produced by coal-fired power stations and Silica Fume, a by-product of producing silicon metal or ferrosilicon alloys. This result demonstrated that GPC/HPC can be utilised as a substitute for traditional Portland cement-based concrete, resulting in improvements in concrete properties in addition to environmental and economic benefits. This study explores utilising experimental data to train artificial neural networks, which are then used to determine the effect of supplementary cementitious material replacement, namely fly ash, Ground Granulated Blast Furnace Slag (GGBFS) and silica fume, on the compressive strength, tensile strength, and modulus of elasticity of concrete and to predict these values accordingly.

용해조건 및 합금원소 첨가에 따른 고규소 내산주철의 기계적 성질 및 부식속도의 변화 (Variations of Mechanical Properties and Corrosion Rate with Melting Conditions and Alloying Elements in High Silicon Cast Irons)

  • 김정철;한동운;백진현;백승한;문병문;신제식;이영국
    • 한국주조공학회지
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    • 제24권4호
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    • pp.209-216
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    • 2004
  • High silicon cast irons(HSCI) with the high acid resistance have been used for the prevention of acid corrosion occurring in various structures under acid conditions. However, the HSCI is only known as one of materials which have high acid resistance, but few work has dealt with this material in domestic. Therefore, in this study, the acid resistance of various cast irons with alloying elements and melting conditions have been examined, and studied the influences of the matrix structures, mechanical properties and morphologies of graphite. The results obtained in this study are as follows : In case of melting temperature, the mechanical properties of specimen manufactured with high temperature of $1650^{\circ}C$ showed higher value because the inclusion and impurity were removed. In case of pouring temperature, the mechanical properties of specimen fabricated below $1350^{\circ}C$ of pouring temperature showed higher value because the amount of gas absorption from atmosphere decreased during the solidification time. The corrosion rate decreased with increase in Si content. On the other hand, Mn addition appeared an opposite trend with Si.

Sizing Efficiency of AKD in Causticizing Calcium Carbonate Filled Paper

  • Wang, Jian;Liu, Ling;Xu, Yong-Jian
    • 펄프종이기술
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    • 제46권2호
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    • pp.1-7
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    • 2014
  • Causticizing calcium carbonate (CCC) is produced as a by-product in the causticization step of the kraft pulping process. It is often calcined in a rotary lime kiln after being dewatered and reused in the causticizing process. But for the China mill, the conventional recycled way is difficult because the CCC is mainly obtained from non-wood pulping materials, which higher silicon content led to serious silicon obstacle. So it is often discarded as solid waste or used in landfill after dewatering and secondary pollution is brought. In order to prevent its secondary pollution, recent years, the CCC is used as a filler in China papermaking industry. In mill trials, the CCC can be used to replace an amount of precipitated calcium carbonate (PCC). Unfortunately, the application scope and dosage of CCC have been limited due to its lower sizing efficiency than PCC. In this study, the reason for the lower sizing efficiency of alkyl ketene dimer (AKD) when CCC was used as a filler was investigated. The results showed that the materials in green liquid, such as insoluble matter in green liquid, silicon and metal ions, were a little influence on the sizing efficiency of AKD. The higher BET and BJH pore volume of the CCC were the main reason for lower sizing efficiency of AKD when it was used as filler.

Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

  • Park, Heejun;Nguyen, Cam Phu Thi;Raja, Jayapal;Jang, Kyungsoo;Jung, Junhee;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.324-326
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    • 2016
  • In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

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방전가공용 질화규소의 미세조직이 내마모에 미치는 영향 (The effect of microstructure of electrical discharge machinable silicon nitride on wear resistance)

  • 이수완;김성호;이명호
    • 한국결정성장학회지
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    • 제8권1호
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    • pp.111-116
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    • 1998
  • 질화규소는 고경도, 고인성 세라믹 재료이기 때문에, 기계적 가공성은 매우 나쁘며, 또한 질화규소는 높은 전기 저항을 갖는다. 매우 높은 전기저항을 띠는 질화규소에 30wt% 이상의 TiN 분말이 첨가되었을 때 전도성 세라믹 복합체가 된다. 높은 전기 전도도를 가질 때 세라믹을 방전가공방법(EDM)을 이용하여 정밀한 가공을 할 수 있다. 높은 전기 전도도를 갖는 $Si_3N_4-TiN$ 세라믹 복합체는 EDM 방법을 이용하여 금속 가공 tool을 만드는데 이용되며, 이러한 tool 재료들은 산화뿐만 아니라 심각한 마모문제를 갖는다. 상압소결후 post HIP 소결방법으로 $Si_3N_4-TiN$ 복합체를 만들었으며, TiN의 양의 변화에 따른 $Si_3N_4$ 복합체의 마모특성을 상온의 대기중에서 조사하였다. 경도, 파괴인성, 강도값을 마모량과 비교하였다. 마모흔의 SEM 관찰로 $Si_3N_4-TiN$ 복합체의 마모기구를 설명하였다.

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Increasing P/E Speed and Memory Window by Using Si-rich SiOx for Charge Storage Layer to Apply for Non-volatile Memory Devices

  • 김태용;;김지웅;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.254.2-254.2
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    • 2014
  • The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

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RI를 이용한 규소시용이 수도의 영양필요흡수에 미치는 영향(I) (Studies on the effect of silicate on nutrients up take using radioisotopes in rice plant. (I))

  • 노준정
    • 한국작물학회지
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    • 제12권
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    • pp.15-20
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    • 1972
  • 본 실험은 동위원소를 이용한 Ion 흡수 및 증산량측정과 고저위답토양에 규산질비료를 첨가하여 시행된 배양실험의 두가지 면에서 고찰된 바 앞서 말한 것을 종합해 보면 수도에 시용된 규소는 수도체내에 흡수집적되어 잎에서는 증산작용을 억제함으로써 증산류를 감소시킨 결과 Ion의 흡수 및 지상부 이동량이 적어지는 것으로 생각된다. 염소는 다른 Ion과는 달리 뿌리에서 소극적으로 흡수를 하고 있는 것이 밝혀졌는데 특히 규소결제구에서 생육된 수도근에서는 규소의 흡수가 매우 저조했고 오직 증산류에 의한 지상부에의 이동량이 많았다는 것은 뿌리에서의 흡수량과 지상부이동은 서로 다른 생리적 현상의 결과라 생각된다. 또 토양배양실험에서는 규산질비료가 토양중에 존재하는 다른 무기 Ion들의 용해도등에 직접적으로 관여하고 있지 않코 다만 비료에 포함된 가용성 무기물함량이 비효도에 기여할 것으로 추측되는 바 시판되는 규산함유 각종비료에 대한 성분분석이 행해져야 될것으로 믿는다.

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마이크로 라만을 사용한 실리콘 아크릴레이트가 광중합 반응에 미치는 영향 관찰 (Observation of the silicon acrylate effect on the photo-polymerization reaction using micro raman spectroscopic technique)

  • 오향림;홍진후;유정아
    • 분석과학
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    • 제17권3호
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    • pp.225-229
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    • 2004
  • UV 경화반응에 의하여 형성된 코팅의 성질을 향상시키기 위하여 첨가제로 사용한 실리콘 아크릴레이트가 광중합 반응에 미치는 영향을 마이크로 라만 분광법을 사용하여 관찰하였다. 광중합 반응의 반응체는 아크릴계 올리고머와 모노머를 사용하였으며 광 개시제로는 Darocur 1173을 사용하였다. 첨가제 실리콘 아크릴레이트는 광 경화 수지에 각각 0-3 wt% 첨가하였으며, UV를 조사하여 중합 반응시킨 후 공기-박막 경계면으로부터 두께에 따른 라만 스펙트럼을 관찰하였다. 광중합 반응의 진행정도는 1410과 $1635cm^{-1}$에 나타나는 중합에 직접 관여하는 아크릴기 ($-C=CH_2$)와 관련된 띠의 세기로부터 구하였다. 관찰된 결과에 따르면 마이크로라만으로부터 얻은 심도 스펙트럼 (depth profile)은 두께에 따른 경화반응의 진행 정도를 관찰할 수 있을 뿐만 아니라 경화 반응에 미치는 여러 요인에 대한 이해를 돕는 좋은 방법이 될 수 있음을 알 수 있다.