• 한국산학기술학회논문지
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• 제11권6호
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• pp.1943-1948
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• 2010

평균 입도의 크기가 ${\sim}1.7\;{\mu}m$와 ${\sim}30\;nm$인 두 종류의 탄화규소 분말을 7 wt% $Y_2O_3$, 2 wt% $Al_2O_3$, 1 wt% MgO를 소결 첨가제로 사용하여 $1800^{\circ}C$에서 1 시간동안 Ar 분위기에서 압력을 가하여 고온가압소결을 하였다. 고온 가압소결한 시편은 $1950^{\circ}C$에서 6 시간동안 Ar 분위기에서 40 MPa의 압력을 가하여 고온 단조 하였다. 두 시편 모두 고온가압소결 후의 미세구조는 등방형 모양의 결정립을 나타내었으며, 고온 단조 후에 결정립 성장이 나타났다. 평균 입도의 크기가 작은 탄화규소 분말로 소결한 시편의 결정립의 크기가 고온 단조 후에도 더 작은 결정립을 나타내었다. 고온 단조 후의 압력축과 평행한 방향과 수직한 방향의 미세구조는 비슷하였다. 탄화규소의 $\beta$에서 $\alpha$로의 상변태가 활발하게 발생하지 않아 집합조직의 발달은 발견되지 않았다. 평균 입도의 크기가 큰 탄화규소 분말로 제작된 시편의 파괴인성 (${\sim}3.9\;MPa{\cdot}m^{1/2}$), 경도 (~ 25.2 GPa), 굽힘강도가 (480 MPa) 평균 입도의 크기가 작은 탄화규소로 제작된 시편보다 높게 나타났다.

• 자원리싸이클링
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• 제12권3호
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• pp.25-30
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• 2003

본 연구의 목적은 실리콘웨이퍼의 절단공정에서 발생한 폐슬러리와 폐망간전지에서 발생하는 흑연봉을 각각 규소 및 탄소의 출발물질로 사용하여 가스터빈 부품, 열교환기 등에 사용되는 탄화규소(SiC)를 합성하는 연구를 수행하였다. 실리콘웨이퍼의 절단공정에서 발생하는 폐슬러리로부터 비중차이에 의한 선별과 자력선별 등에 의해 정제된 규소와 탄화규소를 얻을 수 있었으며, 폐망간전지를 해체하여 얻은 탄소봉으로부터 수세와 분쇄를 통하여 탄소분말을 얻을 수 있었다. 탄화규소의 합성은 규소와 당량비의 탄소분발을 혼합하여 1$600^{\circ}C$이상의 온도에서 아르곤 분위기와 진공분위기 하에서 2시간 유지시켰을 때 이루어졌으며, 이때 합성된 탄화규소의 순도는 99% 이상이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.100-103
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• 2019

The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.1-33
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• 2000

Silicon carbide ceramics with sintering additives from the system AlN-Y$_2$O$_3$ can be gas-pressure sintered to theoretical density. While commonly a combination of sesquioxides is used such as Al$_2$O$_3$-Y$_2$O$_3$, the oxynitrid additives offer the advantage that only a nitrogen atmosphere is require instead of a powder. By starting form a mixture of ${\beta}$-SiC and ${\alpha}$-SiC, and by performing dedicated heat treatments after densification, anisotropic grain growth is obtained which leads to a platelet microstructure showing enhance fracture toughness. In the present work, recent improvement of the mechanical behaviour of these materials at ambient and high temperatures is reported. By means of a surface oxidation treatment in air it is possible to obtain four-point bending strengths in excess of 1 GPa, and the strength retention at high temperatures is significantly improved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1449-1450
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol.%) mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS) under argon atmosphere at 50MPa(P50) and 60MPa(P60) pressure. The relative density, 94.13% of P60 sample was lower than that, 94.75% of P50 sample. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The trend of flexural strength of SiC-$ZrB_2$ composites were in accordance with the relative density. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance in the temperature range from $25^{\circ}C$ to $500^{\circ}C$, and electrical resistivity of P50 and P60 sample were $6.75{\times}10^{-4}$ and $7.22{\times}10^{-4}{\Omega}{\cdot}cm$ at room temperature, respectively.

• 한국환경과학회지
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• 제22권1호
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• pp.83-89
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• 2013

Silicon carbide with aluminium oxide was used to remove the sulphur hexafluoride ($SF_6$) gas using microwave irradiation. The destruction and removal efficiencies (DREs) of $SF_6$ were studies as a function of various decomposition temperatures and microwave powers. The decomposition of $SF_6$ gas was analyzed using GC-TCD. XRD (X-ray powder diffraction) and XRF (X-ray Fluorescence Spectrometer) were used to characterize the properties of aluminum oxide. DREs of $SF_6$ were increased as the microwave powers were increased. Additive aluminium oxide on SiC increased the removal efficiencies and decreased the decomposition temperature. The XRD results show that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ during $SF_6$ decomposition by microwave irradiation. It was found that the best material to control $SF_6$ was SiC with $Al_2O_3$ 30 wt% in consideration of microwave energy consumption and $SF_6$ decomposition rate.

• 한국세라믹학회지
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• 제47권6호
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• pp.485-490
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• 2010

In our previous studies, continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by two different slurry infiltration methods: vacuum infiltration and electrophoretic deposition (EPD). 12 wt% of $Al_2O_3-Y_2O_3$-MgO with respect to SiC powder was used as additives for liquid-phase assisted sintering. After hot pressing at $1750^{\circ}C$ under 20 MPa for 2 h in Ar atmosphere, a high composite density could be achieved for both cases, whereas the problems such as large grain size and non-uniform distribution of liquid phase were observed, which was resulted in the relatively poor mechanical properties of composites. Therefore, efforts have been made to reduce the grain growth during the sintering, including the optimization for hot pressing condition and utilization of spark plasma sintering using a SiC monolith. Based on the results, spark plasma sintering was found to be effective method in decreasing the amount of sintering additive, time and grain growth, which will be explained in comparison to the results of hot pressing in this paper.

• 동굴
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• 제79호
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• pp.77-81
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• 2007

In this paper deals with behavior of the magnetic abrasive using Sr-Ferrite on polishing charateristiccs in a internal finishing of staninless steel pipe a tying magnetic abrasive polishing. The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has in aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain SiC has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only SiC abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From MACRO analysis, we found that SiC abrasive and Sr-Ferrite were strongly bonding with each other.

• 한국산업융합학회 논문집
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• 제23권4_2호
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• pp.669-674
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• 2020

Liquid-phase-sintered (LPS) SiC materials were briefly examined with their microstructure and mechanical property. Especially, effect of high-temperature exposure on the tendency of fracture toughness of LPS-SiC were introduced. The LPS-SiC was fabricated in hot-press by sintering powder mixture of sub-micron SiC and sintering additives of Al₂O₃-Y₂O₃. LPS-SiC represented dense morphology and SiC grain-growth with some amount of micro-pores and clustered additives as pore-filling. The strength of LPS-SiC might affected by distribution of micro-pores. LPS-SiC tended to decrease fracture toughness depending on increasing exposure temperature and time.