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http://dx.doi.org/10.4191/KCERS.2010.47.6.485

Prevention of Grain Growth during the Liquid-Phase Assisted Sintering of β-SiC  

Gil, Gun-Young (School of Materials Science and Engineering, Yeungnam University)
Noviyanto, Alfian (School of Materials Science and Engineering, Yeungnam University)
Han, Young-Hwan (School of Materials Science and Engineering, Yeungnam University)
Yoon, Dang-Hyok (School of Materials Science and Engineering, Yeungnam University)
Publication Information
Journal of the Korean Ceramic Society / v.47, no.6, 2010 , pp. 485-490 More about this Journal
Abstract
In our previous studies, continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by two different slurry infiltration methods: vacuum infiltration and electrophoretic deposition (EPD). 12 wt% of $Al_2O_3-Y_2O_3$-MgO with respect to SiC powder was used as additives for liquid-phase assisted sintering. After hot pressing at $1750^{\circ}C$ under 20 MPa for 2 h in Ar atmosphere, a high composite density could be achieved for both cases, whereas the problems such as large grain size and non-uniform distribution of liquid phase were observed, which was resulted in the relatively poor mechanical properties of composites. Therefore, efforts have been made to reduce the grain growth during the sintering, including the optimization for hot pressing condition and utilization of spark plasma sintering using a SiC monolith. Based on the results, spark plasma sintering was found to be effective method in decreasing the amount of sintering additive, time and grain growth, which will be explained in comparison to the results of hot pressing in this paper.
Keywords
Silicon carbide; Composites; Electrophoretic deposition; Grain growth; Sintering;
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Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 3
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