• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1515-1516
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjection a 40:60(vol%) mixture of zirconium diborided ($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS) under argon atmosphere. Inner diameters of graphite mold were $15mm{\varphi}$ and $20mm{\varphi}$, respectively. The relative densities of $15mm{\varphi}$ and $20mm{\varphi}$ sample were 99.4% and 97.88%, respectively. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The result of FE-SEM of fracture face of $15mm{\varphi}$ sample was intergranular fracture and that of $20mm{\varphi}$ sample was transgranular fracture. Because the fracture strength of $15mm{\varphi}$ sample was much higher than that of $20mm{\varphi}$ sample. The electrical resistivity, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$ of $15mm{\varphi}$ sample was higher than that, $6.17{\times}10^{-4}{\Omega}{\cdot}cm$ of $20mm{\varphi}$ sample because of densification. Although sintering condition of SPS is same. the properties of sintered SiC-$ZrB_2$ compacts were changed according to inner diameter of graphite mold.

• 한국산학기술학회논문지
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• 제20권11호
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• pp.7-12
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• 2019

반도체 시장에서 소재 개발 및 제조 공법에 대한 연구는 꾸준히 진행되고 있다. 일반적으로 자동 로봇용 End Effector는 알루미나(Al₂O₃)와 탄화규소(SiC) 등의 세라믹이 사용되었다. 본 연구는 대량생산이 가능한 분말 성형 프레스 법을 통해 반도체 현장에서 사용되는 블랙 알루미나를 개발하였다. 그리고 알루미나와 블랙 알루미나를 자동 로봇의 End Effector에 적용될 수 있도록 평면 연삭기를 사용하여 연삭가공을 실시하였다. 연삭가공을 통해 블랙 알루미나 대한 표면 거칠기(Ra)를 비교·분석하여 최적의 절삭 조건을 확인 할 수 있었다. 알루미나 표면 거칠기는 이송 속도가 0.72mm/sec이고 회전수가 1,700 rpm에서 0.4876 ㎛로 가장 양호하였다. 블랙 알루미나 표면 거칠기는 대부분의 절삭 조건에서 0.2 ㎛이하의 정밀도를 나타내었으며, 이송 속도가 0.72mm/sec이고 회전수가 1,900 rpm에서 0.1364 ㎛로 가장 양호하였다. 블랙 알루미나의 표면 거칠기는 알루미나 보다 0.35 ㎛ ~ 0.47 ㎛ 정도 양호하였다.

• Nuclear Engineering and Technology
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• 제48권4호
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• pp.1009-1014
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• 2016

SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ~0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ~100 MPa. The joint interface consisted of $TiSi_2$, $Ti_3SiC_2$, and SiC phases formed by a diffusion reaction of Ti and Si.

• 한국세라믹학회지
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• 제50권6호
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• 전기학회논문지
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• 제60권11호
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• pp.2083-2087
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• 한국산학기술학회논문지
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• 제19권3호
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• pp.576-583
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• 2018

탄화규소는 실리콘과 비교시 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 ${\beta}$-SiC 분말로부터 제조한 다공질 n형 SiC 세라믹스의 경우, $800{\sim}1000^{\circ}C$에서 높은 열전 변환 효율을 나타내었다. SiC 열전 변환 반도체를 응용하기 위해서는 변환 성능지수도 중요하지만 $800^{\circ}C$ 이상에서 사용할 수 있는 고온용 금속전극 또한 필수적이다. 일반적으로 세라믹스는 대부분의 보편적인 용접용 금속과는 우수한 젖음을 갖지 못 하지만, 활성 첨가물을 고용시킨 합금의 경우, 계면 화학종들의 변화가 가능해서 젖음과 결합의 정도를 증진시킬 수 있다. 액체가 고체 표면을 적시면 액체-고체간 접합면의 에너지는 고체의 표면에너지 보다 작아지고 그 결과 액체가 고체 표면에서 넓게 퍼지면서 모세 틈새로 침투할 수 있는 구동력을 갖게 된다. 따라서 본 연구에서는 비교적 낮은 융점을 갖는 Ag를 이용해서 다공질 SiC 반도체 / Ag 및 Ag 합금 / SiC 및 알루미나 기판간의 접합에 대해 연구하였고, Ag-20Ti-20Cu 필러 메탈의 경우 SiC 반도체의 고온용 전극으로 적용 가능할 것으로 나타났다.

• 한국세라믹학회지
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• 제35권7호
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• pp.721-725
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• 1998

본 연구에서는 Boron과 Carbon black이 소결조재로 첨가된 탄화규소 분말을 $1950^{\circ}C$에서 상압소결 방법으로 시편을 제조하고 꺽임강도, 파괴인성, 비마모량을 측정하고 파단면 및 마찰마모면의 미세구조를 SEM으로 관찰하여 마찰마모특성과 미세구조와의 관계를 규명하였다. 또한 마모상대재료로서 SiC pin과 $Al_{2}O_{3}$ pin을 사용하였을때 마찰마모특성과 미세구조와의 관계도 비교 검토하였으며 다음과 같은 결론을 얻었다. 1. SiC pin을 사용한 경우 소결시편의 비마모량은 $Al_{2}O_{3}$ pin을 사용한 경우보다 많았으나, 가압하중이 증가하면 $Al_{2}O_{3}$ pin을 사용한 경우가 SiC pin을 사용한 경우보다 비마모량의 증가율이 6.5배로 되었다. 2. Pin의 비마모량은 SiC pin의 경우가 $Al_{2}O_{3}$의 경우보다 많았으나 가압하중이 증가하면 $Al_{2}O_{3}$ pin의 경우가 SiC pin의 경우보다 비마모향의 증가율이 약4배로 되었다. 3. 마모상대재료의 마찰계수가 작은 경우에는 마모면의 미세구조가 평활하면서 crack이 나타나지 않았으나, 마찰계수가 큰 경우에는 마모면이 평활치 못하고 crack의 전파현상이 크게 나타났다. 4. 사용된 Pin의 마찰계수가 큰 경우에는 고상소결한 SiC 시편도 액상소결한 시편과 마찰마모 특성이 유사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• 한국재료학회지
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• 제21권1호
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• pp.8-14
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• 2011

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at $200^{\circ}C$ for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at $800^{\circ}C$ under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were $2.36{\mu}m$ and $3.16{\mu}m$. The quantities of each element were measured as $SiO_{1.07}C_{6.33}$ by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at $80^{\circ}C$ for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.

• 한국산학기술학회논문지
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• 제20권3호
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• pp.29-34
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• 2019

SiC는 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 $N_2$ 분위기, $2000^{\circ}C$에서 ${\beta}-SiC$ 분말로부터 제조한 다공질 n형 SiC 반도체의 경우, $800{\sim}1000^{\circ}C$에서의 도전율 값이 단결정 SiC와 비교해서 비슷하거나 오히려 높은 값을 나타내었으며, 반면에 열전도율은 치밀한 SiC 세라믹스와 비교시 1/10~1/30 정도로 낮은 값을 나타내었다. 본 연구에서는 소결온도를 낮추기 위해 n형 ${\beta}-SiC$에 함침 시킨 polycarbosilane (PCS)의 열분해에 의한 반응소결 공정 ($1400{\sim}1600^{\circ}C$)으로 다공질 소결체를 제작하였다. 함침 및 소결공정($N_2$ 분위기, $1600^{\circ}C$, 3시간)을 반복함에 따라 상대밀도는 크게 증가하지 않았지만 Seebeck 계수 및 도전율은 크게 증가하였다. 본 연구에서의 열전변환 효율을 반영하는 power factor는 고온에서 상압소결 공정으로 제작한 다공질 SiC 반도체에 비해 1/100~1/10 정도 작게 나타났지만, 미세구조 및 캐리어 밀도를 정밀하게 제어하면, 본 연구에서의 반응소결 공정으로 제작한 SiC 반도체의 열전물성은 크게 향상될 것으로 판단된다.