• Journal of the Korea Institute of Military Science and Technology
• /
• v.20 no.5
• /
• pp.620-632
• /
• 2017

A chemical vapor curing method(CVC) was developed to cure polycarbosilane(PCS) fibers by using cyclohexene vapour as a non-oxygen active reactant, instead of air in oder to prepare the silicon carbide(SiC) fiber with low oxygen content. A cross-linked PCS fibers by cyclohexene vapor showed a completely different variation in IR spectra in comparison to the air-cured PCS fiber. CVC method resulted in less than 3 wt% in oxygen content. In this experiment conditions, The average tensile strength and modulus of SiC fiber obtained by CVC had 1995 MPa and 183 GPa respectively, which is higher than that of SiC fiber prepared by air-curing process.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.15 no.3
• /
• pp.36-43
• /
• 2016

Carbon fiber-reinforced silicon carbide (Cf-SiC) and SiC / SiC composites have high thermal conductivity, and excellent corrosion and wear resistance, a low coefficient for thermal expansion and are lightweight. This is why they are commonly used in parts of the aerospace industry to develop an aircraft thrust deflector, jet vane, combustion chamber, elevens, body flap, and a shingle. So, understanding how this state-of-the-art Cf-SiC affects both internal and external crack detection and determining issues during the manufacturing process of composite materials, should be evaluated according to valuation techniques in the external environment. In this paper, we apply a non-contact air ultrasonic technique of non-destructive testing techniques to perform a study on internal defect detection identification and assessment of carbon-fiber reinforced silicon carbide composites to perform basic research and applied research.

• Journal of Radiation Protection and Research
• /
• v.37 no.2
• /
• pp.70-74
• /
• 2012

Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

• Journal of Electrical Engineering and Technology
• /
• v.13 no.1
• /
• pp.387-392
• /
• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• Journal of Surface Science and Engineering
• /
• v.29 no.5
• /
• pp.467-473
• /
• 1996

Heteroepitaxial growth of cubic silicon carbide films on Si(001) and Si(111) substrates at temperatures 900-$1000^{\circ}C$ has been achieved by high vacuum chemical vapor deposition using the single precursor 1, 3-disilabutane without carrying out the carbonization process of the substrate surfaces. The deposition temperature range is much lowered compared with conventiontional chemical vapor deposition where separate sources for silicon and carbon are employed. The deposition procedure is quite simple and safe. The qualities of the films were found to be very good judging from the results obtained by various characterization techniques including reflection high energy electron diffraction, X-ray diffraction, X-ray pole figure analysis, Rutherford backscattering spectrometry, Auger depth profiling, and transmission electron diffraction.

• Journal of Korea Foundry Society
• /
• v.33 no.2
• /
• pp.69-74
• /
• 2013

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

• Proceedings of the KIPE Conference
• /
• 2013.11a
• /
• pp.89-90
• /
• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.428-428
• /
• 2007

최근 고화질 카메라폰이 경박단소화 되는 경향에 따라 Plastic렌즈 또는 구면 Glass렌즈만으로는 요구되는 광학적 성능 구현이 힘들기 때문에 비구면 Glass렌즈에 대한 요구가 증가하고 있다. 이러한 비구면 Glass렌즈는 일반적으로 초경합금 성형용 코어를 이용한 고온압축 성형방식으로 제작되어지기 때문에 코어면의 초정밀 연삭가공 및 코어면 코팅기술 개발이 시급한 상황이다. 한편, 대표적인 난삭재 Silicon Carbide(SiC)는 광학적 특성 및 기계적 특성, 전기적 특성 등 우수한 특성을 가진 재료로서 우주망원경, 레이저 광 및 X선 반사용 미러 등 다종, 다양한 용도로 이용되고 있으며 전기, 전자, 정보, 정밀기기의 급격한 발전으로 SiC의 수요가 급격히 증가하고 있다. 비구면 Glass렌즈 성형용 코어를 SiC소재로 제작할 경우 성형용 코어의 수명향상, 렌즈 생산원가의 절감 및 코팅 과정의 간소화 등의 다양한 장점을 가지므로 SiC를 이용한 성형용 코어의 나노 정밀도급 초정밀 연삭가공기술의 개발이 필요하다. 본 논문에서는 3 메가픽셀, 2.5배 광학 줌 카메라폰 모듈용 비구면 Glass렌즈 개발을 목적으로 실험계획법을 적용하여 초경합금 성형용 코어의 연삭조건을 규명하였다. 초경합금 비구면 성형용 코어의 초정밀 연삭가공조건 및 결과를 바탕으로 난삭재인 Silicon Cabide(SiC)의 연삭가공조건을 구하고 이를 이용하여 비구면 Glass렌즈 성형용 코어를 초정밀 연삭가공하였다.

• Journal of Ceramic Processing Research
• /
• v.21 no.3
• /
• pp.351-357
• /
• 2020

To prevent the oxidation of ultra-high-temperature ceramic zirconium diboride (ZrB2) at high temperatures, this study fabricated sintered composites containing silicon carbide and tungsten carbide, and examined the properties related to hightemperature oxidation. Spark plasma sintering was employed for rapid sintering, and a high-temperature torch test was conducted on samples to determine their surface oxidation behaviour. The composites oxidised at high temperature showed different surface oxidation behaviour according to the type of carbide-based additive. Composites containing both carbides, which have different oxidation mechanisms, exhibited better resistance to oxidation than those containing a single carbide.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.104-111
• /
• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.