• Membrane and Water Treatment
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• 제9권1호
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• pp.63-68
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• 2018

Molecular dynamics simulations were used to study the removal of Cd(II) as a heavy metal from wastewater using armchair carbon nanotube, boron nitride nanotube and silicon carbide nanotubes under applied electric field. The system contains an aqueous solution of $CdCl_2$ as a heavy metal and a (7,7) nanotube as a nanostructured membrane, embedded in a silicon nitride membrane. An external electric field was applied to the considered system for the removal of $Cd^{2+}$ through nanotubes. The simulation results show that in the same conditions, considered armchair nanotubes were capable to remove $Cd^{2+}$ from wastewater with different ratios. Our results reveal that the removal of heavy metals ions through armchair carbon, boron nitride and silicon carbide nanotubes was attributed to the applied electric field. The selective removal phenomenon is explained with the calculation of potential of mean force. Therefore, the investigated systems can be recommended as a model for the water treatment.

• 한국세라믹학회지
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• 제45권2호
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• pp.99-104
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• 2008

Zeta potential, sedimentation bulk density and rheology in the dispersion system have been studied in terms of solid loading (40-55 vol%), and types of additives. Ammonium polymethacrylate, glycerol, ethoxylated acetylenic diol, and polyvinyl alcohol have been used as the dispersant, cryo-protectant, surfactant, and binder, respectively. Sedimentation density greatly increased upon adding dispersant; the effect was more pronounced with ionic alumina suspension compared with covalent silicon carbide. With further addition of cryo-protectant and surfactant to dispersant, the sedimentation density increased somewhat. The suspension viscosity generally behaviored in an opposite manner to the sedimentation density, i.e., high sedimentation gave low high-shear viscosity, indicative of low order structure formation in the suspended particles. Shear rate rheology in shear rate of $2-300\;sec^{-1}$ showed a shear thinning and its onset began at similar shear rate (${\sim}100\;sce^{-1}$), regardless of solid loading.

• 한국세라믹학회지
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• 제47권6호
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• pp.509-514
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• 2010

Porous mullite-bonded SiC (MBSC) ceramics were fabricated at temperatures ranging from 1400 to $1500^{\circ}C$ for 2 h using silicon carbide (SiC), alumina ($Al_2O_3$), strontium oxide (SrO), and poly (methyl methacrylate-coethylene glycol dimethacrylate) (PMMA) microbeads. The effect of template content on porosity, pore morphology, and flexural strength were investigated. The porosity increased with increasing the template content at the same sintering temperature. The flexural strength showed maximum after sintering at $1450^{\circ}C$/2 h for all specimens due to small pores and dense strut. By controlling the template content and sintering temperature, it was possible to produce porous MBSC ceramics with porosities ranging from 30% to 54%. A maximum flexural strength of ~51MPa was obtained at 30% porosity when no template were used and specimens sintered at $1450^{\circ}C$/2 h.

• 한국세라믹학회지
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• 제49권1호
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• pp.95-99
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• 2012

Silicon carbide ceramics are used for oxidation resistive coating films due to their excellent properties like high strength, good oxidation resistance, and good abrasion resistance, but they have poor formability and are prepared by vapor process which is complicated, costly, and sometimes hazardous. In this study, preparation of silicon carbide coating film by liquid process using polymer precursor was attempted. Coating film was prepared by dip coating on substrate followed by heat treatment in argon at $1200^{\circ}C$. By changing the dipping speed, the thickness was controlled. The effects of plasticizer, binder, or fiber addition on suppression of crack generation in the polymer and ceramic films were examined. It was found that fiber additives was effective for suppressing crack generation.

• 한국정밀공학회지
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• 제26권9호
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• pp.58-63
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• 2009

Silicon carbide (SiC) has been used for many engineering applications because of their high strength at high temperatures and high resistances to chemical degradation. SiC is very useful especially for a glass lens mold whose components demanded to the machining with good surface finish and low surface damage. The performance and reliability of optical components are strongly influenced by the surface damage of SiC during grinding process. Therefore, the severe process condition optimization shall be necessary for the highly qualified SiC glass lens mold. Usually the major form of damage in grinding of SiC is a crack occurs at surface and subsurface. The energy introduced in the layers close to the surface leads to the formation of these cracks. The experimental studies have been carried out to get optimum conditions for grinding of silicon carbide. To get the required qualified surface finish in grinding of SiC, the selection of type of the wheel is also important. Grinding processes of sintered SiC work-pieces is carried out with varying wheel type, depth of cut and feed using diamond wheel. The machining result of the surface roughness and the number of flaws, have been analyzed by use of surface profilers and SEM.

• Advances in nano research
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• 제14권2호
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• pp.195-200
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• 2023

Safety in sports is important because if an athlete has an accident, he may not be able to lead an everyday life for the rest of his life. The safety of sports facilities is very effective in creating people's sports activities, with the benefits of staying away from physical injury, enjoying sports, and mental peace. Everyone has the right to participate in sports and recreation and to ensure that they want a safe environment. This study prepares a very good Nickel-Cobalt -Silicon carbide (Ni/Co-SiC) nanocomposite with convenient geometry on the leg press machine rod, employing the pulse electrodeposition technique to reduce the rod's wear and increase the durability of sports equipment and control sports damages. The results showed that the Ni/Co-SiC nanocomposite formed at 2 A/dm2 shows extraordinary microhardness. The wear speed for the Ni/Co-SiC nanocomposite created at 4 A/dm2 was 15 mg/min, showing superior wear resistance. Therefore, the Ni/Co-SiC nanocomposite can reduce sports equipment's wear and decrease sports injuries. Ni-Co/SiC nanocomposite layers with various scopes of silicon carbide nanoparticles via electrodeposition in a Ni-Co plating bath, including SiC nanoparticles to be co-deposited. The form and dimensions of Silicon carbide nanoparticles are watched and selected using Scanning Electron Microscopy (SEM).

• 마이크로전자및패키징학회지
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• 제25권3호
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• pp.21-30
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• 2018

Driven by the recent energy saving trend, conventional silicon based power conversion modules are being replaced by modules using silicon carbide. Previous papers have focused mainly on the electrical advantages of silicon carbide semiconductors that can be used to design switching devices with much lower losses than conventional silicon based devices. However, no systematic study of their thermomechanical reliability in power conversion modules using finite element method (FEM) simulation has been presented. In this paper, silicon and silicon carbide based power devices with three-phase switching were designed and compared from the viewpoint of thermomechanical reliability. The switching loss of power conversion module was measured by the switching loss evaluation system and measured switching loss data was used for the thermal FEM simulation. Temperature and stress/strain distributions were analyzed. Finally, a thermal fatigue simulation was conducted to analyze the creep phenomenon of the joining materials. It was shown that at the working frequency of 20 kHz, the maximum temperature and stress of the power conversion module with SiC chips were reduced by 56% and 47%, respectively, compared with Si chips. In addition, the creep equivalent strain of joining material in SiC chip was reduced by 53% after thermal cycle, compared with the joining material in Si chip.

• 한국결정성장학회지
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• 제24권6호
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• pp.242-245
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• 2014

탄화규소의 화학기상증착 중에 두께 균일성을 향상시키기 위하여 평행하게 회전하는 3단 서셉터를 포함하는 CVD 장치에 대하여 전산유체역학(CFD) 시뮬레이션을 수행하였다. 실제 증착 실험에서는 단 간의 두께 균일성은 상당히 만족스러웠으나 같은 단 위에서는 위치에 따라 두께가 균일하지 못한 3C-SiC 상이 얻어지는 것을 확인하였다. 불균일의 원인으로는 서셉터의 회전 속도에 따른 영향으로 판단되었다. CFD 결과로부터 단 간의 균일성을 향상시키기 위해서는 120도 분기 노즐을 주입구에 설치하는 것이 바람직할 것으로 판단되었으며 단 내의 균일도 향상은 회전 속도를 줄임으로써 가능할 것으로 생각된다. 이렇게 제작된 탄화규소가 증착된 흑연 부품은 고경도, 내산화성 및 분진 억제 특성을 갖고 있어서 반도체용 부품으로 사용될 수 있다.

• 한국산업융합학회 논문집
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• 제26권6_2호
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• pp.1019-1024
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• 2023

Ceramic materials have excellent material properties such as stability at high temperatures, chemical stability, corrosion resistance, and wear resistance, so they are applicable even in extreme environments of high temperature and pressure. In particular, silicon carbide can be applied in the field of structural ceramics due to its characteristics of high strength, hardness, corrosion resistance, and heat resistance even at high temperatures. In this study, considering the application of silicon carbide materials to next-generation turbines, silicon carbide materials were manufactured using a liquid phase sintering method. When manufacturing liquid phase sintered silicon carbide, sintering additives were added to lower the sintering temperature and densify the material. In Al₂O₃-SiO₂, it was confirmed that the secondary product of the sintering additive was observed as a slightly dark area and was evenly distributed overall, and the fracture surface of Al₂O₃-SiO₂ was in the form of transgranular fracture in which cracks progressed along the crystal plane, and the flexural strength for Al₂O₃-SiO₂ was about 445.6 MPa.

• 센서학회지
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• 제18권2호
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• pp.147-153
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• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.