• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.521-524
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• 2001

In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Journal of Power Electronics
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• v.11 no.4
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• pp.606-611
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• 2011

Power electronics is a key technology for electric, hybrid, plug-in hybrid, and fuel cell vehicles. Typical power electronics converters used in electric drive vehicles include dc/dc converters, inverters, and battery chargers. New semiconductor materials such as silicon carbide (SiC) and novel topologies such as the Z-source inverter (ZSI) have a great deal of potential to improve the overall performance of these vehicles. In this paper, a Z-source inverter for fuel cell vehicle application is examined under three different scenarios. 1. a ZSI with Si IGBT modules, 2. a ZSI with hybrid modules, Si IGBTs/SiC Schottky diodes, and 3. a ZSI with SiC MOSFETs/SiC Schottky diodes. Then, a comparison of the three scenarios is conducted. Conduction loss, switching loss, reverse recovery loss, and efficiency are considered for comparison. A conclusion is drawn that the SiC devices can improve the inverter and inverter-motor efficiency, and reduce the system size and cost due to the low loss properties of SiC devices. A comparison between a ZSI and traditional PWM inverters with SiC devices is also presented in this paper. Based on this comparison, the Z-source inverter produces the highest efficiency.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.312-323
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• 2017

This paper introduces the bidirectional dc-dc converter design case study, which employs silicon-carbide (SiC) MOSFETs for battery energy storage system (BESS). This converter topology is selected as bidirectional synchronous buck converter, which is composed of a half bridge converter, an inductor, and a capacitor, where the converter has less conduction loss than that of a unidirectional buck and boost converter, and to improve the converter efficiency, both the power stage design and power conversion architecture are described in detail. The conduction and switching losses are compared among three different SiC devices in this paper. In addition, the thermal analysis using Maxwell software of each switching device supports the loss analyses, in which both the 2 kW prototype analyses and experimental results show very good agreement.

• Resources Recycling
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• v.15 no.5 s.73
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• pp.11-16
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• 2006

A novel microwave-induced pyrolysis was used for the recovery of valuable products from waste polystyrene in motor oil. Quartz tube was introduced as microwave reactor and silicon carbide was used as the microwave absorbent. In the experiments, different pyrolysis conditions were applied, such as time range from 30 minutes to 1 hour and microwave input power range from 180 to 250W. The distillate products from pyrolysis were analyzed with GC/MS. Styrene, 1-methyl styrene, toluene, ethyl benzene were the four main products. Styrene recovery rate from polystyrene was around 50%. Temperature for the complete pyrolysis using microwave was around $300^{\circ}C$ which is much lower than that of conventional thermal pyrolysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.1-5
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• 2005

A new model of plasma etch process was constructed by using a radial basis function network (RBFN). This technique was applied to an etching of silicon carbide films in a NF$_3$ inductively coupled plasma. Experimental data to train RBFN were systematically collected by means of a 2$^4$ full factorial experiment. Appropriateness of prediction models was tested with test data consisted of 16 experiments not pertaining to the training data. Prediction performance was optimized with variations in three training factors, the number of pattern units, width of radial basis function, and initial weight distribution between the pattern and output layers. The etch responses to model were an etch rate and a surface roughness measured by atomic force microscopy. Optimized models had the root mean-squared errors of 26.1 nm/min and 0.103 nm for the etch rate and surface roughness, respectively. Compared to statistical regression models, RBFN models demonstrated an improvement of more than 20 % and 50 % for the etch rate and surface roughness, respectively. It is therefore expected that RBFN can be effectively used to construct prediction models of plasma processes.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.797-802
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• 1996

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited on unheated substrates by low frequency (50Hz) plasma using $SiH_4+CH_4+H_2$ gas mixtures. Deposition rate, refractive index, optical band gap, Vickers hardness and IR spectrum of the deposited a -SiC:H films have been measured for various rations of gas flow rates k(=$CH_4/SiH_4$, 0.5k4) with a constant $H_2$ flow rate (100sccm). As k increases, the deposition rate of the a-SiC:H films increases up to the maximum value of about 220nm/h at k=2.5, and then it decreases. The refractive index of the films was 2.6 for k=2.5, while the optical band gap of the films was 3.3eV for k=2.2. The maximum value of Vickers hardness of the films was 1500Hv at k=1. The infrared transmission measurement shows that the films contain both Si-C and Si-$CH_3$ bonds.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.12
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• pp.1245-1251
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• 2009

This paper describes the research on the non-eroding throat insert materials under condition of high-temperature, high-pressure, and long-burn time. C/SiC, CIT and W/$Y_2O_3$ were chosen and tested in thermal protection evaluation motor of burning time 20 seconds. From the test results, a heat resistance of W/$Y_2O_3$ was the most excellent among them, but was happened crack on material surface. Thermal reaction characteristics and heat resistance of these materials and feasibility of W/$Y_2O_3$ as throat material were ascertained.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.12
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• pp.28-32
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• 2010

Technical demands for aspheric glass lens formed in market increases its application from simple camera lens module to fiber optics connection module in optical engineering. WC is often used as a metal core of the aspheric glass lens, but the long life time is issued because it fabricated in high temperature and high pressure environment. High hard thin film coating of lens core increases the core life time critically. Diamond Like Carbon(DLC) thin film coating shows very high hardness and low surface roughness, i.e. low friction between a glass lens and a metal core, and thus draw interests from an optical manufacturing industry. In addition, DLC thin film coating can removed by etching process and deposit the film again, which makes the core renewable. In this study, DLC films were deposited on the SiC ceramic core. The process variable in FVA(Filtered Vacuum Arc) method was the substrate bias-voltage. Deposited thin film was evaluated by raman spectroscopy, AFM and nano indenter and measured its crystal structure, surface roughness, and hardness. After applying optimum thin film condition, the life time and crystal structure transition of DLC thin film was monitored.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.23 no.6
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• pp.547-554
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• 2014

CVD SiC is a perfect material used for molds/dies in hot press molding of glass lens. In its fabrication process, nano-precision polishing is essential finally. For this purpose, a novel polishing method using MCF (Magnetic Compound Fluid) slurry is proposed. In this method, MCF slurry is supplied into a given gap between the workpiece and a MCF slurry carrier, and constrained within the polishing zone by magnetic forces from permanent magnet. In this paper, after an experimental rig used to actually realize the proposed method has been constructed, the fundamental polishing characteristics of CVD SiC such as the effects of process parameters including MCF slurry composition on work-surface roughness were experimentally investigated. As a result, nano-precision surface finish of CVD SiC was successfully attained with MCF slurry and the optimum process parameters for obtaining the smoothest work-surface were determined.