• Title/Summary/Keyword: silicon Carbide

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Strength Properties and Elastic Waves Characteristics of Silicon Carbide with Damage-Healing Ability (손상치유 능력을 가지는 탄화규소의 강도 특성과 탄성파 특성)

  • KIM MI-KYUNG;AHN BYUNG-GUN;KIM JIN-WOOK;PARK IN-DUCK;AHN SEOK-HWAN;NAM KI-Woo
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2004.05a
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    • pp.337-341
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    • 2004
  • Engineering ceramics have superior heat resistance, corrosion resistance, and wear resistance. Consequently, these art significant candidates for hot-section structural components of heat engine and the inner containment of nuclear fusion reactor. Besides, some of them have the ability to heal cracks and great benefit can be anticipated with great benefit the structural engineering field. Especially, law fracture toughness of ceramics supplement with self-healing ability. In the present study, we have been noticed some practically important points for the healing behavior of silicon nitride, alumina, mullite with SiC particle and whisker. The presence of silicon carbide (SiC) in ceramic compound is very important for crack-healing behavior. However, self-healing of SiC has not been investigated well in detail yet. In this study, commercial SiC was selected as sample, which can be anticipated in the excellent crack healing ability. The specimens were produced three-point bending specimen with a critical semi-circular crack of which size that is about $50-700{\mu}m$. Three-point bending test and static fatigue test were performed cracked and healed SiC specimens. A monotonic bending load was applied to cracked specimens by three-point loading at different temperature. The purpose of this paper is to report Strength Properties and Elastic Waves Characteristics of Silicon Carbide with Crack Healing Ability.

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Mechanical Strength Values of Reaction-Bonded-Silicon-Carbide Tubes with Different Sample Size (튜브형상 반응소결 탄화규소 부품의 시편크기에 따른 강도평가 유용성 고찰)

  • Kim, Seongwon;Lee, Soyul;Oh, Yoon-Suk;Lee, Sung-Min;Han, Yoonsoo;Shin, Hyun-Ick;Kim, Youngseok
    • Journal of Powder Materials
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    • v.24 no.6
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    • pp.450-456
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    • 2017
  • Reaction-bonded silicon carbide (RBSC) is a SiC-based composite ceramic fabricated by the infiltration of molten silicon into a skeleton of SiC particles and carbon, in order to manufacture a ceramic body with full density. RBSC has been widely used and studied for many years in the SiC field, because of its relatively low processing temperature for fabrication, easy use in forming components with a near-net shape, and high density, compared with other sintering methods for SiC. A radiant tube is one of the most commonly employed ceramics components when using RBSC materials in industrial fields. In this study, the mechanical strengths of commercial RBSC tubes with different sizes are evaluated using 3-point flexural and C-ring tests. The size scaling law is applied to the obtained mechanical strength values for specimens with different sizes. The discrepancy between the flexural and C-ring strengths is also discussed.

Removal of Fe, Si from Silicon Carbide Sludge Generated in the Silicon Wafer Cutting Process (실리콘 웨이퍼 절단공정(切斷工程)에서 발생(發生)하는 실리콘 카바이드 슬러지로부터 철(鐵), 실리콘 제거(除去))

  • Park, Hoey Kyung;Go, Bong Hwan;Park, Kyun Young;Kang, Tae Won;Jang, Hee Dong
    • Resources Recycling
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    • v.22 no.2
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    • pp.22-28
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    • 2013
  • In the present study, the possibility of recovering and recycling the silicon carbide(SiC) from a silicon sludge by removing Fe and Si impurities was investigated. Si and SiC were separated from the silicon sludge using centrifugation. The separated SiC concentrate consisted of Fe, Si and SiC, in which Fe and Si were removed to recover the pure SiC. Leaching with acid/alkali solution was compared with the vapor-phase chlorination. The Fe concentration removed in the SiC was 49 ppm, and it was separated by leaching with 1 M HCl solution at $80^{\circ}C$ for 1 h. The Si concentration removed in the SiC was 860 ppm, and it was separated by leaching with 1M NaOH solution at $50^{\circ}C$ for 1 h. The SiC concentrate was chlorinated in a tubular reactor, 2.4 cm in diameter and 32 cm in length. The boat filled with SiC concentrate was located at the midpoint of the alumina tube, then, the chlorine and nitrogen gas mixture was introduced. The Fe and Si concentration removed in the SiC were 48 ppm and 405 ppm, respectively, at $500^{\circ}C$ reactor temperature, 4 h reaction time, 300 cc/min gas flow rate, and 10% $Cl_2$ gas mole fraction.

Synthesis of High-purity Silicon Carbide Powder using the Silicon Wafer Sludge (실리콘 기판 슬러지로부터 고순도 탄화규소 분말 합성)

  • Hanjung Kwon;Minhee Kim;Jihwan Yoon
    • Resources Recycling
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    • v.31 no.6
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    • pp.60-65
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    • 2022
  • This study presents the carburization process for recycling sludge, which was formed during silicon wafer machining. The sludge used in the carburization process is a mixture of silicon and silicon carbide (SiC) with iron as an impurity, which originates from the machine. Additionally, the sludge contains cutting oil, a fluid with high viscosity. Therefore, the sludge was dried before carburization to remove organic matter. The dried sludge was washed by acid cleaning to remove the iron impurity and subsequently carburized by heat treatment under vacuum to form the SiC powder. The ratio of silicon to SiC in the sludge was varied depending on the sources and thus carbon content was adjusted by the ratio. With increasing SiC content, the carbon content required for SiC formation increased. It was demonstrated that substoichiometric SiCx (x<1) was easily formed when the carbon content was insufficient. Therefore, excess carbon is required to obtain a pure SiC phase. Moreover, size reduction by high-energy milling had a beneficial effect on the suppression of SiCx, forming the pure SiC phase.

Molding of glass micro optical components (유리 마이크로 광부품 어레이의 성형)

  • 최우재;강신일
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2003.10a
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    • pp.76-79
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    • 2003
  • Glass molding is an advantageous method to manufacture glass micro optical components. However, it is difficult to make tungsten carbide core for glass molded micro optics way. We have developed novel method to fabricate tungsten carbide core for glass molding of glass micro optical components. Silicon masters were fabricated by micro machining. Tungsten Carbide cores were fabricated by forming, sintering and coating. Finally we fabricated glass molded V-groove with pitch of 192$\mu\textrm{m}$ and glass microlens way with lens diameter of 36∼225$\mu\textrm{m}$ by the present method.

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방전플라즈마 소결에 의한 SiC-$ZrB_2$ 복합체 개발

  • Kim, Cheol-Ho;Sin, Yong-Deok;Ju, Jin-Yeong;Lee, Jeong-Hun;Lee, Hui-Seung;Kim, Jae-Jin;Lee, Jong-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.87-87
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    • 2009
  • The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$, SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively.

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Characteristics of Silicon Carbide Nanowires Synthesized on Porous Body by Carbothermal Reduction

  • Kim, Jung-Hun;Choi, Sung-Churl
    • Journal of the Korean Ceramic Society
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    • v.55 no.3
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    • pp.285-289
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    • 2018
  • We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.