• 한국표면공학회지
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• 제31권5호
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• pp.237-244
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• 1998

In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

• Wind and Structures
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• 제32권2호
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• pp.105-114
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• 2021

This paper describes a wind tunnel test on a 1:25 scale model of TTU building with several adjustable openings in order to comprehensively study the characteristics of fluctuating internal pressures, especially the phenomenon of the increase in fluctuating internal pressures induced by tangential flow over building openings and the mechanism causing that. The effects of several factors, such as wind angle, turbulence intensity, opening location, opening size, opening shape and background porosity on the fluctuating internal pressures at oblique wind angles are also described. It has been found that there is a large increase in the fluctuating internal pressures at certain oblique wind angles (typically around 60° to 80°). These fluctuations are greater than those produced by the flow normal to the opening when the turbulence intensity is low. It is demonstrated that the internal pressure resonances induced by the external pressure fluctuations emanating from flapping shear layers on the sidewall downstream of the windward corner are responsible for the increase in the fluctuating internal pressures. Furthermore, the test results show that apart from the opening shape, all the other factors influence the fluctuating internal pressures and the internal pressure resonances at oblique wind angles to varying degrees.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.19-24
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• 2021

As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

• Current Optics and Photonics
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• 제4권6호
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• pp.509-515
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• 2020

A practical single photon source for fiber-based quantum information processing is still lacking. As a possible 1.55-㎛ quantum-dot single photon source, an InGaAsP/InP-air-aperture micropillar cavity is investigated in terms of fabrication tolerance. By properly modeling the processing uncertainty in layer thickness, layer diameter, surface roughness and the cavity shape distortion, the fabrication imperfection effects on the cavity quality are simulated using a finite-difference time-domain method. It turns out that, the cavity quality is not significantly changing with the processing precision, indicating the robustness against the imperfection of the fabrication processing. Under thickness error of ±2 nm, diameter uncertainty of ±2%, surface roughness of ±2.5 nm, and sidewall inclination of 0.5°, which are all readily available in current material and device fabrication techniques, the cavity quality remains good enough to form highly efficient and coherent 1.55-㎛ single photon sources. It is thus implied that a quantum dot contained InGaAsP/InP-air-aperture micropillar cavity is prospectively a practical candidate for single photon sources applied in a fiber-based quantum information network.

• Applied Microscopy
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• 제50권
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• pp.17.1-17.9
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• 2020

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

• 한국지반신소재학회논문집
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• 제22권4호
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• pp.83-92
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• 2023

In this study, we conducted verification of key influencing factors during cone penetration testing using the developed Mini Cone Penetration Tester (Mini-CPT), and compared the experimental results with empirical formulas to validate the equipment. The Mini-CPT was designed to measure cone penetration resistance through a Strain Gauge, and the resistance values were calibrated using a Load Cell. Moreover, the influencing factors were verified using a model ground constituted in a soil box. The primary influencing factors examined were the boundary effect of the soil box, the distance between cone penetration points, and the cone penetration speed. For the verification of these factors, the experiment was conducted with the model ground having a relative density of 63.76% in the soil box. It was observed that the sidewall effect was considerably significant, and the cone penetration resistance measured at subsequent penetration points was higher due to the influence between penetration points. However, within the speed range considered, the effect of penetration speed was almost negligible. The measured cone penetration resistance was compared with predicted values obtained from literature research, and the results were found to be similar. It is anticipated that using the developed Mini-CPT for constructing model grounds in the laboratory will lead to more accurate geotechnical property data.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.615-618
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• 2005

In this work, the effects of corner transistors in SOI MOSFETs were investigated. We fabricated SOI MOSFETs with various widths and a fixed length and characterized them. The SOI thickness was $4000{\AA}$ and the buried oxide(BOX) thickness was $4000{\AA}$. The isolation of active region was simply done by silicon etching and TEOS sidewall formation. Several undesirable characteristics have been reported for LOCOS isolation in fabrication on SOI wafers so far. Although we used an STI-like process instead of LOCOS, there were still a couple of abnormal phenomena such as kinks and double humps in drain current. Above all, we investigated the location of the parasitic transistors and found that they were at the corners of the SOI in width direction by high-resolution SEM inspection. It turned out that their characteristics are strongly dependent on the channel width. We made a contact pad through which we can control the body potential and figured out the dependency of operation on the body potential. The double humps became more prominent as the body bias went more negative until the full depletion of the channel where the threshold voltage shift did not occur any more. Through these works, we could get insights on the process that can reduce the effects of corner transistors in SOI MOSFETs, and several possible solutions are suggested at the end.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1193-1196
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• 2004

We have demonstrated the use of MWCNT as a nanoscale probe to monitor the activity of enzyme kinase. To immobilize the substrate peptide using carbodiimide chemistry, plasma or strong acid treatments were used to induce carboxyl groups on the sidewall of MWCNTs. After the susbtrate peptide immobilization, increase of conductance from MWCNT devices was observed. When peptide modified MWCNTs react with enzyme kinase, conductance decreases by several orders of magnitude, and this conductance change can be explained by the phosphorylation reaction of enzyme kinase. When the sample was incubated with phosphatase to dephosphorylate the substrate peptide, nearly complete recovery of the conductance signal has been observed. 4 for 6 devices appeared the same trends. So, we can confirm that we have monitored the kinase activity on the MWCNT surface by electrical detection.

• 한국지반공학회논문집
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• 제20권5호
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• pp.79-86
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• 2004

지반과 숏크리트 사이의 인터페이스 특성은 지반하중이 숏크리트 라이닝에 전달되는 과정에서 중요한 역할을 한다. 또한 인터페이스 특성은 지반 및 숏크리트 라이닝의 거동에 상당한 영향을 미친다. 그러나 대부분의 수치 해석적 연구에서는 이러한 인터페이스 특성을 단순히 가정하여 적용해 왔으며 이를 규명하기 위한 시도도 거의 이루어지지 않았다. 따라서 본 연구에서는 터널 측벽에서 회수된 숏크리트/암석 코어에 대해 직접전단시험과 인터페이스 수직압축시험을 실시하여 점착력, 인장강도, 마찰각, 전단강성 및 수직강성과 같은 인터페이스 특성을 규명하고자 하였다. 인터페이스 특성의 시간 의존적인 변화양상과 비교하기 위하여 압축강도와 탄성계수와 같은 숏크리트의 역학적 물성도 측정하였다. 실험결과로부터, 지반과 숏크리트 라이닝 사이의 인터페이스 특성은 역학적 물성과 유사하게 상당한 시간 의존적 거동을 보인다는 것을 확인하였다. 또한 인터페이스 특성의 시간의존적인 거동을 지수함수와 로그함수 형태로 잘 근사 시킬 수 있었다.

• Archives of Plastic Surgery
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• 제43권1호
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• pp.77-83
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• 2016

Background Previous studies have investigated facial artery perforators, but have reported inconsistent results regarding lateral nasal artery (LNA) perforators. Although several authors have described the use of LNA perforators for ala nasi and nasal sidewall reconstruction, the literature contains little information regarding the cadaveric dissection of LNA perforators, and most previously published studies have focused on facial artery perforators. Methods Sixteen hemifaces from eight fresh cadavers were dissected to study the LNA perforators. After the dissection was performed, the total length and diameter of the LNA and its perforators were measured. The quantity and the distribution of the LNA perforators supplying the overlying skin were then assessed. LNA perforator flaps were used for reconstruction in 10 nasal and perinasal defects. Results The mean total lengths of the LNA and its perforators were 49.37 mm and 16.06 mm, respectively. The mean diameters of the LNA and its perforators were 2.08 mm and 0.91 mm, respectively. Based on our findings, we mapped the face to indicate zones with a higher probability of finding perforators. No infection, hematoma, or complete flap necrosis were observed after the procedures. Conclusions Nasal reconstruction is a challenging procedure, and LNA propeller/V-Y perforator flaps are an excellent reconstructive option in certain cases. Based on our cadaveric study, we were able to identify an area in the upper third of the nasolabial groove with a high density of perforators.