• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.5
• /
• pp.11-20
• /
• 1999

The data transfer width between the mocroprocessor and the memory comes to a critical part that limits system performance since the data transfer width has been as it was while the performance of a microprocessor is getting higher due to its continuous development in speed. And it is important that the memory should be in small size for the reduction of embedded microprocessor's price which is integrated on a single chip with the memory and IO circuit. In this paper, a mocroprocessor tentatively named as Extendable Instruction Set Computer(EISC) is proposed as the high code density 32 bit mocroprocessor architecture. The 32 bit EISC has 16 general purpose registers and 16 bit fixed length instruction which has the short length offset and small immediate operand. By using and extend register and extend flag, the offset and immediate operand could be extended. The proposed 32 bit EISC is implemented with an FPGA and all of its functions have been tested and verified at 1.8432MHz. And the cross assembler, the cross C/C++ compiler and the instruction simulator of the 32 bit EISC shows 140-220% and 120-140% higher code density than RISC and CISC respectively, which is much higher than any other traditional architectures. As a consequence, the EISC is suitable for the next generation computer architecture since it requires less data transfer width compared to any other ones. And its lower memory requirement will embedded microprocessor more useful.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.3 s.40
• /
• pp.1-8
• /
• 2006

Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.19 no.3
• /
• pp.44-50
• /
• 2005

This paper deals with the characteristics and reduction methods of the plasma luminosity caused between the ZnO surge arrester block and metal electrodes. In this study, the impulse current generator that can generate $8/20[{\mu}s]$ impulse currents with a peak short-circuit of 10[kA] is designed and fabricated. Plasma luminosity phenomena for fine and used ZnO blocks were observed as a function of the contact states between the ZnO block and electrodes and the polarity of applied impulse voltages. As a result, discharge luminous events are produced near the contact edges between the ZnO block and metal electrodes. The discharge plasma luminosity between the ZnO surge arrester block and low potential electrode is more intensive than that between the ZnO surge arrester block and high potential electrode. Surface flashover of ZnO blocks are mainly caused by plasma generation near the edge of metal electrode. Also, plasma luminosity for the fine ZnO blocks is less than that for the used ZnO blocks. Plasma luminosity at the contact of the ZnO block and ring-type electrode is more intensive than that at the contact of ZnO block and disk electrode. It is desirable to use the disk electrode with the proper contact area to reduce the plasma luminosity caused at the contact point between the ZnO block and electrodes.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.6
• /
• pp.646-651
• /
• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

• Journal of Advanced Navigation Technology
• /
• v.16 no.1
• /
• pp.16-26
• /
• 2012

Pseudolites are ground-based transmitters that can be configured to emit GPS-like signals for enhancing the GPS by providing increased accuracy, integrity, and availability. However, a pseudolite (PL) can interfere with GPS satellite signals while it is transmitting or cause saturation to automatic gain control circuit. To solve these problems pulsing scheme is used, which transmits PL signal during a short period of time. In this paper the effect of the number of PL and pulsing scheme on the software GPS L1 and L2C signal acquisition performance is studied for the three pulsing schemes such as static pulsing, sweep pulsing, and pseudo random pulsing. For GPS L1 signal, static pulsing shows the best signal acquisition and tracking performance with one PL, and random pulsing shows the best performance with more than or equal to two PLs. For GPS L2C signal, all three pulsing schemes show the similar signal acquisition and tracking performance, but static pulsing shows a little better performance. For GPS L1 and L2C signals, software GPS receivers can do positioning with up to three PLs.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.14 no.4
• /
• pp.1908-1914
• /
• 2013

In this paper, we introduce a design method for a broadband planar quasi-Yagi antenna (QYA) for terrestrial digital television (DTV) reception. The coplanar strip line which feeds the driver dipole is connected to a microstrip line and is terminated by short circuit. By appending a wide strip-type rectangular director at a location close to the driver dipole, broadband impedance matching and gain enhancement in a high frequency region are obtained. The gain characteristics in a low frequency region are improved by adding a reflector formed by a truncated ground plane. To reduce the antenna size, the strip-type dipole and reflector are modified to half bow-tie (V)-shaped elements. The effects of various parameters on the antenna characteristics are examined. An antenna, as a design example for the proposed antenna, is designed for the operation in the frequency band of 470-806 MHz for terrestrial DTV. The optimized antenna is fabricated on an FR4 substrate and the experimental results show that the antenna has a good performance such as a frequency band of 450-848 MHz for a VSWR < 2, gain > 4.1 dBi, and front-to-back ratio > 10.4 dB.

• Journal of the Korean Vacuum Society
• /
• v.22 no.1
• /
• pp.37-44
• /
• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.140-140
• /
• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.7
• /
• pp.38-45
• /
• 2006

The superconducting fault current limiters(SFCLs) provide the effect such as enhancement in power system reliability due to limiting the fault current within a few miliseconds. Among various SFCLs we have developed a flux-lock type SFCL and exploited a special design to effectively reduce the fault current according to properly adjustable magnetic field after the short-circuit test. This SFCL consists of two copper coils wound in parallel on the same iron core and a component using the YBCO thin film connected in series to the secondary copper coil. Meanwhile, operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. To analyze the operational characteristics, we compared closed-loop with open-loop iron core. When the applied voltage was 200[Vrms] in the additive polarity winding, the peak values of the line current the increased up to 30.71[A] in the closed-loop and 32.01[A] in the open-loop iron core, respectively. On the other hand, in the voltages generated at current limiting elements were 220.14[V] in the closed-loop and 142.73[V] in the opal-loop iron core during first-half cycle after fault instant under the same conditions. We confirmed that the open-loop iron core had lower power burden than in the closed-loop iron core. Consequently, we found that the structure of iron core enabled the flux-lock type SFCL at power system to have the flexibility.

• The Korean Journal of Physiology and Pharmacology
• /
• v.2 no.4
• /
• pp.521-527
• /
• 1998

An important property of the intestine is the ability to secrete fluid. The intestinal secretion is regulated by a number of substances including vasoactive intestinal peptide (VIP), ATP and different inflammatory mediators. One of the most important secretagogues is adenosine during inflammation. However, the controversy concerning the underlying mechanism of adenosine-stimulated $Cl^-$ secretion in intestinal epithelial cells still continues. To investigate the effect of adenosine on $Cl^-$ secretion and its underlying mechanism in the rabbit colon mucosa, we measured short circuit current ($I_{SC}$) under automatic voltage clamp with DVC-1000 in a modified Ussing chamber. Adenosine, when added to the basolateral side of the muocsa, increased $I_{SC}$ in a dose-dependent manner. The adenosine-stimulated $I_{SC}$ response was abolished when $Cl^-$ in the bath solution was replaced completely with gluconate. In addition, the $I_{SC}$ response was inhibited by a basolateral Na-K-Cl cotransporter blocker, bumetanide, and by apical $Cl^-$ channel blockers, dephenylamine-2-carboxylate (DPC), 5-nitro-2-(3-phenyl-propylamino)-benzoate (NPPB), glibenclamide. Amiloride, an epithelial $Na^+$ channel blocker, and 4,4-diisothiocyanato-stilbene-2,2-disulphonate (DIDS), a $Ca^{2+}-activated$ $Cl^-$ channel blocker, had no effect. In the mucosa pre-stimulated with forskolin, adenosine did not show any additive effect, whereas carbachol resulted in a synergistic potentiation of the $I_{SC}$ response. The adenosine response was inhibited by 10 ${\mu}M$ H-89, an inhibitor of protein kinase A. These results suggest that the adenosine-stimulated $I_{SC}$ response is mediated by basolateral to apical $Cl^-$ secretion through a cAMP-dependent $Cl^-$ channel. The rank order of potencies of adenosine receptor agonists was $5'-(N-ethylcarboxamino)adenosine(NECA)＞N^6-(R-phenylisopropyl)adenosine(R-$ PIA)＞2-[p-(2-carbonylethyl)-phenyl-ethylamino]-5'-N-ethylcarboxaminoadenosine(CGS21680). From the above results, it can be concluded that adenosine interacts with the $A_{2b}$ adenosine receptor in the rabbit colon mucosa and a cAMP-dependent signalling mechanism underlies the stimulation of $Cl^-$ secretion.