• 제목/요약/키워드: short film

검색결과 592건 처리시간 0.026초

마야 데렌의 영화적 시간과 공간: '인위적 리얼리티' (Cinematic Time and Space in Maya Deren's Films: 'Artificial Reality')

  • 허은희
    • 한국멀티미디어학회논문지
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    • 제21권10호
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    • pp.1211-1220
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    • 2018
  • Maya Deren is well known as the 'mother' of the American avant-garde films by her first short, Meshes of the Afternoon (1943). One of the major contributions of Maya Deren's theoretical body of work to the visibility was the invention of a new vocabulary for independent film-making such as 'film-poems', and 'choreo-cinema'. To create experimental film forms, she chose poetry, dance, architecture and music as a metaphor to describe her images. On the top of these arts, Maya uses camera works and editing system to achieve an 'artificial reality' whose character is miraculous in that living whole, in order to help the audience to experience a protagonist's psychological journey.

Electrochemical Studies on the Mechanism of the Fabrication of Ceramic Films by Hydrothermal-Electrochemical Technique

  • Zhibin Wu;Masahiro Yoshimura
    • Bulletin of the Korean Chemical Society
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    • 제20권8호
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    • pp.869-874
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    • 1999
  • In this paper, electrochemical techniques are used to investigate hydrothermal-electrochemically formation of barium titanate (BT) ceramic films. For comparison, the electrochemical behaviors of anodic titanium oxide films formed in alkaline solution were also investigated both at room temperature and in hydrothermal condition at 150.0 ℃. Film structure and morphology were identified by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Titanium oxide films produced at different potentials exhibit different film morphology. The breakdown of titanium oxide films anodic growth on Ti electrode plays an important roles in the formation of BT films. BT films can grow on anodic oxide/metal substrate interface by short-circuit path, and the dissolution-precipitation processes on the ceramic film/solution interface control the film structure and morphology. Based upon the current experimental results and our previous work, extensively schematic proce-dures are proposed to model the mechanism of ceramic film formation by hydrothermal-electrochemical method.

Selenium박막의 광학적 특성연구 (A study on the optical characteristics of selenium thin film)

  • 허창수;오영주
    • E2M - 전기 전자와 첨단 소재
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    • 제9권1호
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    • pp.44-50
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    • 1996
  • In this study, Selenium device was fabricated by vacuum evaporation method with the substrate temperature at room temperature and its electrical and optical properties were investigated to be used in optical device. The film properties largely depended on the transmittance and annealing time, and improved with aging owing to stress release. We found that the photocurrent of the films increase linearly with light illumination. As a result, Selenium device made by this method yielded a short circuit current density of 10.5mA/$\textrm{cm}^2$, an open circuit voltage of 39OmV.

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비정질 실리콘 태양전지 후면 반사막 적용을 위한 저온 증착된 AZO 박막 특성에 관한 연구

  • Kang, Junyoung;Park, Hyeongsik;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.315-315
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    • 2016
  • The hydrogenated amorphous silicon (a-Si:H) thin film solar cells using n/Al or n/Ag/Al back reflector have low short circuit current (Jsc) due to high absorption coefficients of Al or work function difference between n-layer and the metal. In this article, we utilized aluminum doped zinc oxide (AZO) to raise the internal reflectance for the improvement of short current density (Jsc) in a-Si:H thin film solar cells. It was found that there was a slight increase in the reflectance in the long wavelength range at the process temperature of 125oC due to improved crystalline quality of the AZO back reflector. The optical band gap (Eg) and work function were affected by the temperature and so did the internal reflectance. The increased internal reflectance within the solar cell resulted in Jsc of 14.94 mA/cm2 and the efficiency of 8.84%. Jsc for the cell without back reflector was 12.29 mA/cm2.

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유도가열 및 근적외선 가열방법에 의한 표면처리 강판 도포층의 가열 및 건조 특성 (Heating & Drying Characteristics of Coating Layer by Induction Heating and Short-wave Infrared Heating)

  • 김태수;양재원
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
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    • pp.249-257
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    • 2004
  • Drying and curing characteristics of PCM resins using the induction heater and short-wave infrared emitter module was studied to develop a compact oven system for the high speed CCL and post-treatment equipment. Drying of the polyester resins using the induction heater and infrared heater showed that the blistering tendency of polyester resin coating increased regardless of additives and colors of resins as the heating rate and/or dry film thickness increased. The blistering of polyester resin coating layer occurred when the heating speed was over than $25^{\circ}C/sec$ for the dry film thickness of $19\~20um$, which is the typical thickness of finish coating in CCL. So did it when the heating speed was over than $40^{\circ}C/sec$ for the dry film thickness over than 10 um. The heating efficiency of paint coated steels by the infrared heating was strongly dependent on the colors of paint coating and generally increased for the dark surface and/or coating. But the faster drying of the PCM resin coatings increased the blistering tendency of coating layer. The blistering limit for the typical finish coating by the infrared heating was estimated as the heating rate slower than $20^{\circ}C/sec$ regardless of colors of PCM resins.

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[ 0.1\;μm ] SOI-MOSFET의 적정 채널도핑농도에 관한 시뮬레이션 연구 (Investigation of Optimal Channel Doping Concentration for 0.1\;μm SOI-MOSFET by Process and Device Simulation)

  • 최광수
    • 한국재료학회지
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    • 제18권5호
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    • pp.272-276
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    • 2008
  • In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

Development of a New Double Buffer Layer for Cu(In, Ga) $Se_2$ Solar Cells

  • Larina, Liudmila;Kim, Ki-Hwan;Yoon, Kyung-Hoon;Ahn, Byung-Tae
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 춘계학술대회
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    • pp.152-153
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    • 2006
  • The new approach to buffer layer design for CIGS solar cells that permitted to reduce the buffer absorption losses in the short wavelength range and to overcome the disadvantages inherent to Cd-free CIGS solar cells was proposed. A chemical bath deposition method has been used to produce a high duality buffer layer that comprises thin film of CdS and Zn-based film. The double layer was grown on either ITO or CIGS substrates and its morphological, structural and optical properties were characterized. The Zn-based film was described as the ternary compound $ZnS_x(OH)_y$. The composition of the $ZnS_x(OH)_y$ layer was not uniform throughout its thickness. $ZnS_x(OH)_y$/CdS/substrate region was a highly intermixed region with gradually changing composition. The short wavelength cut-off of double layer was shifted to shorter wavelength (400nm) compared to that (520 nm) for the standard CdS by optimization of the double buffer design. The results show the way to improve the light energy collection efficiency of the nearly cadmium-free CIGS-based solar cells.

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에코의 삼중 분절 개념으로 본 디지털 3D 단편 애니메이션의 미장센 - <버스데이 보이Birthday Boy>를 중심으로 - (mise-en-scen of Digital 3D Short Animation in a Viewpoint of 'Triple Articulation' by U. Eco Focuseed on 3D Digital Animation 'Birthday Boy')

  • 안세웅
    • 한국콘텐츠학회논문지
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    • 제6권12호
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    • pp.278-286
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    • 2006
  • 이 연구에서는 몇 년 사이에 꾸준한 발전을 이루고 있는 국내 디지털 3D 단편 애니메이션에 주목하여 사례 작품을 통한 미장센을 분석해봄으로써 작품창작력의 핵심이 되는 영상미학적 요소와 작품의 성공 모델을 수립하기 위한 참고 지표를 찾아보고자 하였다. 미장센 분석틀로는 에코U. Eco의 영상기호학에서 논의되는 삼중 분절 개념을 적용하였는데, 그 각 요소는 의미체semes, 형상figures, 운동형태들cinemorphes 이다. 사례 작품은 2005년 미국 아카데미상 후보에 올라 그 객관성을 확보한 박세종 감독의 <버스데이 보이Birthday Boy>를 중심으로 하였다.

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Electron Cyclotron Resonance $N_2$O-플라즈마 게이트 산화막을 사용한 다결정 실리콘 박막 트랜지스터의 성능 향상 및 단채널 효과 억제 (Improved Performance and Suppressed Short-Channel Effects of Polycrystalline Silicon Thin Film Transistors with Electron Cyclotron Resonance $N_2$O-Plasma Gate Oxide)

  • 이진우;이내인;한철희
    • 전자공학회논문지D
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    • 제35D권12호
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    • pp.68-74
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    • 1998
  • 본 논문에서는 electron cyclotron resonance (ECR) N₂O-플라즈마 산화막을 게이트 산화막으로 사용한 다결정 실리콘 박막 트랜지스터 (TFT)의 성능과 단채널 특성에 대하여 연구하였다. ECR NE₂O-플라즈마 게이트 산화막을 사용한 소자는 열산화막을 이용한 경우에 비해 우수한 성능과 억제된 단채널 효과를 나타낸다. 얇은 ECR N2O-플라즈마 산화막을 사용하여 n채널 TFT의 경우 3 ㎛, p채널 TFT의 경우 1㎛ 게이트 길이까지 문턱 전압 감소가 없는 소자를 얻었다. 이러한 특성 향상은 부드러운 계면, passivation 효과, 그리고 계면과 박막 내부에 존재하는 강한 Si ≡ N 결합 등에 기인한다.

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전자 제어식 가솔린 엔진의 벽류 생성 요인에 관한 연구 (A Study on the Factors of Fuel-Film Formation in an EGI Gasoline Engine)

  • 김봉규;이기형;이창식
    • 대한기계학회논문집B
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    • 제22권11호
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    • pp.1530-1537
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    • 1998
  • Mixture formation is one of the significant factors to improve combustion performance of an spark ignition engine. This is affected by spray and atomization characteristics of injector. In the case of EGI system, air-fuel mixing period is so short that a lot of fuel-film and liquid-fuel flow into cylinder. Since this fuel-film is not burnt perfectly in cylinder, it is exhausted in the form of HC emission. In this paper, three measurement techniques were utilized to measure spray characteristics and the amount of fuel-film in the cylinder. At first, PMAS was used to measure the spray characteristics such as size distributions, SMD, and spray angle. Secondly the amount and distribution of fuel-film which flow into through intake valve could be measured quantitatively using the fuel-film measuring device. And lastly, by optical fiber type spark plug used to detect the diffusion flame, the amount of unburned HC was measured. As the result of these experiments, the information of optimal spray characteristics and injection condition to minimize fuel-film could be built up.