• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.7-9
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• 2008

ITO thin film is generally fabricated by various. methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.772-779
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• 2000

The friction and wear behavior of short carbon fiber reinforced polyetheretherketone was studied experimentally under dry sliding conditions against SCM440(AISI 4140) disks with a different surface roughness and hardness at the low sliding speeds and the high pressures on a pin-on-disk apparatus. Under the low disk surface roughness value the earsplitting noise and stick-slip were occurred. The increased adhesion friction and wear factor with stick-slip made the friction and wear behavior worse. Under the high disk surface hardness the break and falling-off of carbon fibers were accelerated. The carbon fibers fallen off from the matrix were ground into powder between two wear surfaces and this phenomenon caused a abrasive friction and wear factor to increase. So the friction and wear behavior became worse. With the transfer film made of wear particles formed on a disk, the carbon powder film formed on a pin lowered a friction coefficient.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1265-1270
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• 2008

Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition $150^{\circ}C,\;175^{\circ}C,\;200^{\circ}C$. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• Tribology and Lubricants
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• v.8 no.2
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• pp.50-63
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• 1992

The minimum oil film thicknesses (MOFT) in the crankshaft main bearings of a 1.5 liter, L-4, gasoline engine are measured and calculated to study the dynamically loaded engine bearing. The MOFT are measured simultaneously at each of the five main bearings using the total capacitance method(TCM). To improve the reliability of the TCM, a reasonable determination method of bearing clearance is introduced and the effects of bearipg cavitation and aeration on the test results are analyzed. Also the crankshaft is grounded by means of a slip ring instead of the friction contact method to improve the test precision. The calculation is based on the model of statically determinate beam, short bearing approximation and Mobility method. From the comparison between the measured and calculated MOFT curves, it is found that a qualitative similarity exists between them, but in all cases, measured MOFT are smaller than that of calculated. The crankshaft vibration and the imbalance of the load distribution between the engine bearings have important influence upon the MOFT curve. So it is found that the calculation result from the model of the statically determinate beam has a limitation in predicting bearing performance.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.951-957
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• 1994

We present a new model for the series resistance of inverted-staggered amorphous silicon (a-Si) thin film transistors (TFT's) by employing the current spreading under the source and the drain contacts as well as the space charge limited current model. The calculated results based on our model have been in good agreements with the measured data over a wide range of applied voltage, gate-to-source and gate-to-drain overlap length, channel length, and operating temperature. Our model shows that the contribution of the series resistances to the current-voltage (I-V) characteristics of the a-Si TFT in the linear regime is more significant at low drain and high gate voltages, for short channel and small overlap length, and at low operating temperature, which have been verified successfully by the experimental measurements.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.1-6
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• 2003

Flow modulation chemical vapor deposition process has been reported as an alternative way to obtain low resistivity, low residual chlorine content and good step-coverage titanium nitride film. Flow and concentration characteristics in a vertical FMCVD reactor are analyzed by using computational fluid dynamics method. The results show that 1.0 second as Cl reduction period is too short and there is still $TiCl_4$ gas above the holder at the end of the period. Time variation of $TiCl_4$ gas concentration on the holder shows that at least 3.0 second is necessary as Cl reduction time for the sake of film characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.114-116
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• 1992

ITO/TiO$_2$/Se solar cell were fabricated by vacuum deposition method, the Se and TiO$_2$were deposited on the ITO/Glass. Prior to the electrical properties of film, the provide Te between the ITO and the Se film were deposited by substrate temperature 20[$^{\circ}C$] and evaporation time 15[min], next time TiO$_2$ were treated by rf-magnetron sputtering in substrate temperature 250[$^{\circ}C$]. Fabricated ITO/TiO$_2$/Se solar cell were as follows : Open Voltage V$\_$oc/=848[mV], Short Circuit Current I$\_$sc/=10.79[mA/$\textrm{cm}^2$]. Fill Factor FF=0.518, energy conversion efficiency η=4.74[%] under the illumination of AM 1.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.55-56
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• 2012

In general, a power decoupling method using electrolytic capacitor is used to solve a problem that appears 120[Hz] ripple of grid at the PV module output. But electrolytic capacitor has a effect on the short lifetime and low reliability of PV system. Therefore, studies which replace the large electrolytic capacitor with small film capacitor have been researched in resent years. This paper proposes flyback inverter which can be replaced with film capacitor by connecting the circuit implementing zero voltage switching in PV side. The proposed system is validated by PSIM simulation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1436-1440
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• 2007

Beryllium copper has been known to be an important material for the various fields of industry because it can be used for mechanical and electrical/electronic components that are subjected to elevated temperatures (up to $400^{\circ}C$ for short times). Blade type tip for probing the cells of liquid crystal display(LCD) was fabricated using beryllium copper foil. The dry film resist was employed as a mask for patterning of the blade type tip. The beryllium copper foil was etched using hydrochloric acidic iron-chloride solution. The concentration, temperature, and composition ratio of hydrochloric acidic iron-chloride solution affect the etching characteristics of beryllium copper foil. Nickel with the thickness of $3{\mu}m$ was electroplated on the patterned copper beryllium foil for enhancing its hardness, followed by electroplating gold for increasing its electrical conductivity. Finally, the dry film resist on the bridge was removed and half of the nickel was etched to complete the blade type tip.