• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.239-242
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• 2008

We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• Journal of Magnetics
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• v.10 no.4
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• pp.133-136
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• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.931-934
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• 2009

본 논문은 $24{\mu}m$ 이하의 미세 폭 및 $30{\mu}m$ 이하의 피치와 같이 미세 패턴을 가진 칩 온 필름(chip-on-film, COF)에 발생한 결함들을 자동으로 검출할 수 있는 시스템을 제안한다. 개발된 검출시스템은 미세 패턴의 COF에서 발생한 개방 (open), 단락 (hard short), mouse bite 및 near short (soft short)과 같은 다양한 결함들을 자동으로 빠르게 검출할 수 있는 기술이 적용되어 있다. 본 논문에서 제안하는 결함 검사 기술의 기본 원리는 미세 패턴내의 결함으로 인해 발생한 저항의 미세 변화를 고주파 공진기 (resonator)를 이용하여 측정 주파수에서 증폭시키고 증폭된 결함 신호와 결함이 없는 경우의 신호와의 전압차를 읽어서 0이 아니면 결함이 있음을 판단한다. 제안된 시스템은 미세 패턴 COF 검사 과정에서 결함들을 신속히 측정할 수 있으므로 불필요한 COF 복사를 위해 소요되는 경비를 줄일 수 있으리라 기대한다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.1-6
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• 2002

For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.287-298
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• 2007

A two-dimensional treatment of the potential distribution under the depletion approximation is presented for poly-crystalline silicon thin film transistors. Green's function approach is adopted to solve the two-dimensional Poisson's equation. The solution for the potential distribution is derived using Neumann's boundary condition at the silicon-silicon di-oxide interface. The developed model gives insight into device behavior due to the effects of traps and grain-boundaries. Also short-channel effects and drain induced barrier lowering effects are incorporated in the model. The potential distribution and electric field variation with various device parameters is shown. An analysis of threshold voltage is also presented. The results obtained show good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of our model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.30-33
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• 1992

This thesis was investigated on ion-induced characteristics in a-$Se_{75}Ge_{25}$ positive and negative resists for focused-ion-beam microlithogaphy. The exposed a-$Se_{75}Ge_{25}$ inorganic thin film shows an increase in optical absorption after exposure to~$10_{16}$ dose of Ga+. The observed shift in the absorption edge toward longer wavelengths is consistent with that in films exposed to band-gap photons(~$10^{21}$photons/cm2). This result may be related with microstructural rearrangements with in the short range of SeGe network. Due to changes in the short range order, the chemical bonding may be affected, which results in increased chemical dissolution in ion-induced film. Also, this resist exhibits good thermal stability because of its high Tg(~$220^{\circ}C$). When focused ion beams are used for direct exposure of resist over a substrate, unwanted implantation of the substrate may be an issue. A possible way to avoid this is to match the thickness of the resist to the range of ions in the resist. Thin aspect is currently under investigation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.142-147
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• 2021

We present a subthreshold swing model for a symmetric junctionless double gate MOSFET. The scale length λ1 required to obtain the potential distribution using the Poisson's equation is a criterion for analyzing the short channel effect by an analytical model. In general, if the channel length Lg satisfies Lg > 1.5λ1, it is known that the analytical model can be sufficiently used to analyze short channel effects. The scale length varies depending on the channel and oxide thickness as well as the dielectric constant of the channel and the oxide film. In this paper, we obtain the scale length for a constant permittivity (silicon and silicon dioxide), and derive the relationship between the scale length and the channel length satisfying the error range within 5%, compared with a numerical method. As a result, when the thickness of the oxide film is reduced to 1 nm, even in the case of Lg < λ1, the analytical subthreshold swing model proposed in this paper is observed to satisfy the error range of 5%. However, if the oxide thickness is increased to 3 nm and the channel thickness decreased to 6 nm, the analytical model can be used only for the channel length of Lg > 1.8λ1.

• Composites Research
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• v.31 no.1
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• pp.23-29
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• 2018

The RFI process can be applied to very thick structures without limiting the resin viscosity. When the proper thickness of the resin film cannot be set, the resin film creates either the non-impregnated section or the excessive resin contents and this leads to the deterioration of mechanical properties. Therefore, this study proposed a method for setting the resin film thickness in the RFI process. The fiber compaction behavior test was proposed by setting the proper resin film thickness and the properties of composites were evaluated through short beam shear strength test, compression test and porosity measurement to verify the proposed method. The evaluation of physical properties of composites was conducted and an appropriate level of resin film thickness was found based on the results of fiber compaction behavior test.

• Cartoon and Animation Studies
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• s.20
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• pp.15-29
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• 2010

Art & Culture Education for improving quality of life and cultural empowerment through the enjoyment of culture and the arts has spread as a variety of programs. However, Art & Culture Education in school has problems in the aspect of functional and superficial contents and ways of class. To achieve the ultimate purpose of Art & Culture Education and to take place as a effective education, quantitative growth in addition to qualitative depth should be considered. The purpose of this study is to develop the integrated Art & Culture Education model in elementary school curriculum using short animations of Korea, for improving the quality and vitalization of Art & Culture Education. For the interdisciplinary education short animation can be an effective asthetical teaching material, which transmits the world view, personality, social and historical reflection of the director. (2003) is a modern interpretation of a myth, which is Woncheongang Bonfuri from Cheju, and folkore paintings. This film can be such a stuff for the interdisciplinary class Korean and Ethics that language intellect and reflection intellect can be motivated. Moreover the thoughts and feelings about the film can be formulated in text, toon, painting that students can extend their language intellect and space intellect. communicates typically korean emotion and nature with its rural atmosphere and boy figure. With this film we can deliver a interdisciplinary class of science and art.