• Proceedings of the KSR Conference
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• 2008.11b
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• pp.321-324
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• 2008

Recently, there is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Among them, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.653-653
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• 2013

In this study, ITO extended gate reduced graphene oxide field effect transistor (rGO FET) was demonstrated as a transducer for a proton sensing application. In this structure, the sensing area is isolated from the active area of the device. Therefore, it is easy to deposit or modify the sensing area without affecting on the device performance. In this case, the ITO extended gate was used as a gate electrode as well as a proton sensing material. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device showed a high stability in the air ambient with a TTC encapsulation layer for months. The device showed an ambipolar characteristic with the Dirac point shift with varying the pH solutions. The sensing characteristics have offered the potential for the ion sensing application.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1203-1207
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• 2008

For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage ($V_{th}$) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.6
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• pp.40-44
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• 2014

In this paper, maximum power is the lowering device using the facility's energy use and peak load electricity through analyzing attitude should like to make it reduce its power base rate. Simulator to manage the demand for power, a maximum electric power base power from electronic watt-hour meters by a device's signal, predictive power, the current power by computing the goal of power for less than Maximum peak power and peak shift, so that you can manage, and peak York, which role you want a cut Metal heat treatment result which analyzes the data, demand for electricity company over the years of analyzing the characteristics of each load, and effects and Reducing power consumption device every month identified seven Sequence control to the load system and successful power control is about showing that the defined goals.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.422.1-422.1
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• 2016

Graphene quantum dots (GQDs), a new kind of carbon-based photo luminescent nanomaterial from chemically modified graphene oxide (CMGO) or chemically modified graphene (CMG), has attracted extensive research attention in the last few years due to its outstanding chemical, optical and electrical properties. To further extended its potential applications as optoelectronic devices, solar cells, bio and bio-sensors and so on, intensive research efforts have been devoted to the CMG. However, the CMG, a suspension of aqueous, have problematic since they are prone to agglomeration after drying a solvent. In this study, we synthesized the GQDs from graphite and deposited on silicon substrate by kinetic spray. The photo luminescent properties of deposited GQD films were analyzed and compared with initial GQDs suspension. In addition, its carbon properties were investigated with GQDs solution properties. The properties of deposited GQD films by kinetic spray were similar to that of the GQDs suspension in water. We could provide a pathway for silicon-based silicon based device applications. Finally, the well-adjusted GQD films with photo luminescence effects will show Energy-Down-Shift layer effects on silicon solar cells. The GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density (Jsc) was enhanced by about 2.94 % (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

• Journal of the Korean Arthroscopy Society
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• v.10 no.2
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• pp.141-147
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• 2006

Purpose: To compare the clinical and radiological results of anterior cruciate ligament(ACL) reconstruction using hamstring autograft and tibialis tendon allograft. Materials and Methods: Twenty four ACL reconstructions using hamstring autograft and 30 using tibialis anterior tendon altograft were followed up at least 1 year. We performed femoral tunnel fixation with Ligament Anchor(LA) screw and tibial tunnel fixation with biodegradable interference screw. Evaluations included Lysholm knee(LK) score, Tegner activity scale, Lachman test, Pivot-Shift test, Quardriceps atrophy, incision site numbness, anterior knee pain and instrumented anterior laxity with $Telos^{(R)}$ device. Results: Preoperativ mean LK score was $60.3(18{\sim}82)$ in autograft group and 61.2(25-80) in allograft group. Mean LK score improved to $91.6(68{\sim}100)\;and\;92.6(77{\sim}100)$ respectively. Activity level, using Tegner activity scale, slightly decreased compared with that of Preinjury state in both groups. Lachman test, pivot-shift test, Quadriceps atrophy, anterior knee pain, incision site numbness, and anterior drawer test using $Telos^{(R)}$ device showed no significant difference between two groups (p>0.05). Conclusion: In performing the ACL reconstruction, there was no statistically significant difference between hamstring autograft group and tibilis anterior allograft group in clinical or in radiological results.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.3
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• pp.193-200
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• 2006

This paper suggests a 6-pulse-shift converter structure with PWM current-source inverter based on buck-boost configuration to improve the efficiency and to reduce the switching frequency of inverter for photovoltaic generation system, the device can be operated as interface system between solar module system and power system grid without energy storage cell. The circuit has six current-source buck-boost converter which operate chopper part and kas one full bridge inverter which make a decision the polarity of AC output. Therefore, the proposed PWM power inverter has advantages such as the reduction of witching loss and realization of unity power factor operation. The theoretical backgrounds are discussed and the input-output characteristics for the implemented prototype inverter using TMS320F2812 are verified experimentally in this paper.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.8-14
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• 1999

The active devices used at microwave frequency have the different phase shift according to input power. Especially, The difference of the phase shift is large in the saturation region of the amplifier. In this paper, we disigned the phase control system for fixing the different phase shift at device. With the high frequency nonlinear amplifier, we fabricated such system that the phase shift to be fixed automatically using the varible phase shifter. The variable phase shifter fixed total phase variation of the circuit using the information that was obtained from the comparison of imputsignal phase with output signal phase. Even though the input signal is 2-tone or FM type, we could estimate and also fix the phase variation on DUT Dynamic range is about 10dB. It has been experimented at 1960MHz using Teflon (H=31mil, ${\varepsilon}r$=3.2)

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.