• Current Photovoltaic Research
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• v.2 no.3
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• pp.130-134
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• 2014

We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

• 한국전자현미경학회:학술대회논문집
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• 2001.11a
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• pp.92-96
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• 2001

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.1-7
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• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• Journal of Radiation Protection and Research
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• v.13 no.2
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• pp.57-66
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• 1988

A series of experiments is performed to measure radon concentration in the near-surface soil gas at the four locations (Cheju-Si, Seoguipo-Si, Taejeong-eup, Seongsan-eup) in Cheju Island, using CR-39 detectors placed inside radon cups. Two types of radon cups are installed in shallow holes of about 15 cm in diameter and 50cm in depth. The optimum etching conditions, i.e., the concentration of NaOH solution, etchant temperature and etching time, are found to be 625N, $70^{\circ}C$ and 5.5 hours for CR-39 detectors. A typical conversion factor of radon cup is calculated as $$1track/mm^3{\cdot}30day=0.059Bq/{\ell}$$. Average radon concentrations over 30 days measured in Cheju Island from May 1, 1987 to April 23, 1988 are $3.1{\pm}0.3Bq/{\ell}$ for open radon cups and $1.7{\pm}0.2Bq/{\ell}$ for closed radon cups.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.36-45
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• 1992

The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

• Journal of Periodontal and Implant Science
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• v.36 no.2
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• pp.319-334
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• 2006

Mechanical and chemical methods are the two ways to treat the implant surfaces. By using mechanical method, it is difficult to eliminate bacteria and by-products from the rough implant surface and it can also cause the structural change to the implant surface. Therefore, chemical method is widely used in order to preserve and detoxicate the implant surface more effectively. The purpose of this study is to evaluate the effect of tetracylcline-hydrochloride(TC-HCI) on the change of implant surface microstructure according to application time. Implants with pure titanium machined surface, SLA surface and porous surface were used in this study. Implant surface was rubbed with sponge soaked in 50mg/ml TC-HCI solution for $\frac{1}{2}$ min., 1 min., $1\frac{1}{2}$ min., 2 min., and $2\frac{1}{2}$ min. respectively in the test group and with no treatment in the control group. Then, specimens were processed for scanning electron microscopic observation. 1. Both test and control group showed a few shallow grooves and ridges in pure titanium machined surface implants. There were not significant differences between two groups. 2. In the SLA surfaces, the control specimen showed that the macro roughness was achieved by large-grit sandblasting. Subsequently, the acid-etching process created the micro roughness, which thus was superimposed on the macro roughness. Irrespective of the application time of 50mg/ml TC-HCI solution, in general, test specimens were similar to control. 3. In the porous surfaces, the control specimen showed spherical particles of titanium alloy and its surface have a few shallow ridges. The roughness of surfaces conditioned with tetracycline-HCI was lessened and seen crater-like irregular surfaces relative to the application time. In conclusion, pure titanium machined surfaces and SLA surfaces weren't changed irrespective of the application time of tetracycline-HCI solution. But the porous surfaces conditioned with tetracycline-HCI solution began to be slightly changed from 2 min. This results are expected to be applied to the regenerative procedures for peri-implantitis treatment.

• Restorative Dentistry and Endodontics
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• v.31 no.6
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• pp.445-451
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• 2006

The purposes of this study were to compare the effects of one or two applications of all-in-one adhesives on microtensile bond strengths (${\mu}$TBS) to unground enamel and to investigate the morphological changes in enamel surfaces treated with these adhesives using a scanning electron microscopy (SEM). Twenty-five noncarious, unrestored human mandibular molars were used. The unground enamel surfaces were cleansed with pumice. The following adhesives were applied to lingual, mid-coronal surfaces according to manufacture's directions; Clearfil SE bond in SE group, Adper Prompt L-Pop$^{TM}$1 coat in LP1 group, 2 coats in LP2 group, Xeno$^{\R}$III1 coat in XN1 group, and 2 coats in XN2 group. After application of the adhesives, a hybrid light-activated resin composite was built up on the unground enamel. Each tooth was sectioned to make a cross-sectional area of approximately 1.0 mm$^2$ for each stick. The microtensile bond strength was determined. Each specimen was observed under SEM to examine the morphological changes. Data were analyzed with one-way ANOVA. The results of this study were as follows; 1. The microtensile bond strength values were; SE (19.77 ${\pm}$ 2.44 MPa), LP1 (13.88 ${\pm}$ 3.67 MPa), LP2 (14.50 ${\pm}$ 2.52 MPa), XN1 (14.42 ${\pm}$ 2.51 MPa) and XN2 (15.28 ${\pm}$ 2.79 MPa). SE was significantly higher than the other groups in bond strength (p < 0.05). All groups except SE were not significantly different in bond strength (p < 0.05). 2. All groups were characterized as shallow and irregular etching patterns.