• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.6
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• pp.828-833
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• 2014

Grid connected transformerless solar power generation system is frequently used with the benefits of cost and efficiency. However, significant DC leakage current can flow from the DC line into the ground with dielectric breakdown in the transformerless solar power generation system. The leakage current occurred in the DC line causes accidents such as fire and electric shock on human. To resolve this problem, high sensitivity DC leakage current sensor is needed. But recently the studies on safety of DC line are not performed. In this paper, a high sensitivity DC leakage current sensor that can detect DC leakage current in solar power generation system, is proposed. Based on the studies, DC leakage current sensor is fabricated and characteristic tests are carried out. Finally, the accuracy of sensor performance is verified by leakage current experiments in solar power generation system.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.61-65
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• 2021

In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.19-24
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• 1999

$In_2O_3$-based thick films for the ozone detection of ppb range have been investigated. The $In_2O_3$ sensing layer is quite sensitive to ozone, but the saturated stable sensitivity cannot be obtained at the ozone exposure of 100 ppb for 5 min. The addition of $Fe_2O_3$ into $In_2O_3$ indicates some improvement in response time and sensitivity, but it seems the improvement is not good enough for real applications. Firing of $In_2O_3$:$Fe_2O_3$ powder induces remarkable improvement in response and recovery, although the sensitivity decrease. The sensing layer fired at $1300^{\circ}C$ and operated $550^{\circ}C$ shows excellent properties of fast response time, saturated stable sensitivity and rapid recovery characteristics to 100 ppb ozone exposure for 5 min. Especially, it shows the reproducibility of the sensor signal for repeated measurements and the linearity between the ozone concentration and the sensor resistance. The preliminary results clearly demonstrated that the sensor can be successfully applied for the ozone detection of ppb range.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.24-31
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• 1999

Ammonia gas sensors were fabricated with ZnO-based thin films grown by RF-magnetron sputtering method. The films which were doped with $MoO_3$ catalysts of various weight percents were grown in different sputtering gases to fabricate the sensors with a high sensitivity, low working temperature and rapid response time. To improve electrical stability, the films were aged in various conditions. The sensors doped with the catalysts and grown in oxygen sputtering gas showed the improvement of sensitivity. These exhibited the increase of surface carrier concentration and electron mobility. The sensor with 0.875wt.% $MoO_3$ catalysts showed the maximum sensitivity of 70 in ammonia gas concentration of 160 ppm at a working temperature of $300^{\circ}C$. The sensor which is aged at $330^{\circ}C$ for 72hrs in oxygen ambient exhibited tourer sensitivity of 57, but more stable properties, excellent linearity.

• Korean Journal of Optics and Photonics
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• v.21 no.5
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• pp.200-205
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• 2010

We report temperature and strain sensing characteristics of two kinds of in-line fiber interferometers. One interferometer consists of a section of Hollow Optical Fiber(HOF) spliced between two Photonic Bandgap Fibers(PBGF) and the other is built by splicing a section of HOF between two Large Mode Area-Photonic Crystal Fibers(LMA-PCF). To minimize the splice losses, we carefully optimized the heating time and arc current of the splicer so as not to collapse the air holes of the fiber. It is found that the first interferometer has a temperature sensitivity of 15.4 pm/$^{\circ}C$ and a strain sensitivity of 0.24 pm/${\mu}\varepsilon$. The other interferometer exhibits a temperature sensitivity of 17.4 pm/$^{\circ}C$ and a strain sensitivity of 0.2 pm/${\mu}\varepsilon$.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.2
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• pp.161-166
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• 2014

This Electromagnetic metal piece detection sensor, having high sensitivity even under high humidity and dust density, using LVDT was investigated. Metal detection characteristics using phase detection method, for 3 frequencies covering ELF and LF band, were experimentally measured. It was found that the sensitivity for metal and animal food, in which metal piece was included, was exponentially increased as frequency increased. Reducing cutoff frequency of LPF after PD was found to be effective to proportionally increase sensitivity. Also the sensitivity of metal piece detection was enhanced by optimizing BPF bandwidth and SNR. Metal piece detection limit using available ferrous test samples was found to be 0.7mm diameter from the experiment using 50kHz, in ELF band, which was known to have better selectivity to animal food. is an example of ABSTRACT format.

• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.1
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• pp.132-138
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• 2011

A micromachined silicon accelerometer capable of surviving and detecting very high accelerations(up to 200,000 times the gravitational acceleration) is necessary for a high impact accelerometer for earth-penetration weapons applications. We adopted as a reference model a piezoresistive type silicon micromachined high-shock accelerometer with a bonded hinge structure and performed structural analyses such as stress, modal, and transient dynamic responses and sensor sensitivity simulation for the selected device using piezoresistive-structural coupled-field analysis. In addition, structural optimization was introduced to improve the performances of the accelerometer against the initial design of the reference model. The design objective here was to maximize the sensor sensitivity subject to a set of design constraints on the impact endurance of the structure, dynamic characteristics, the fundamental frequency and the transverse sensitivities by changing the dimensions of the width, sensing beams, and hinges which have significant effects on the performances. Through the optimization, we could increase the sensor sensitivity by more than 70% from the initial value of $0.267{\mu}V/G$ satisfying all the imposed design constraints. The suggested simulation and optimization have been proved very successful to design high impact microaccelerometers and therefore can be easily applied to develop and improve other piezoresistive type sensors and actuators.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.29 no.1
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• pp.405-410
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the distribution of the resistance change ratio on the diaphragm and bridge surface where piezoresistor would be formed, and proposed the proper size and position of piezoresistor with which the sensitivity of sensor was increased. As the width of mass and boss was increased, the distance between piezoresistors was closed and the maximum value of resistance change ratio was decreased by the increase of the structure stiffness.

• Broadcasting and Media Magazine
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• v.5 no.1
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• pp.59-71
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• 2000

This paper presents a survey of the CMOs-based image sensor and its applications to various real field digital camera. CMOS image sensor, called active pixel sensor (APS), has many interesting properties such ash I회 sensitivity, high speed readout, random access and lower power consumption when it is compared with CCd. this paper also addresses the state-of-the-art of CMOS image sensor, and gives some examples of its application to digital camera and special-purpose cameras. with the advancement of semiconductor technology, CMOS image sensor is a future technology for imaging system, and will be widely used in the filed of image capturing for consumer electronics and scientific measurements.

• Korean Journal of Optics and Photonics
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• v.25 no.3
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• pp.131-136
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• 2014

In this paper we have implemented a temperature-insensitive polarimetric fiber strain sensor based on a Sagnac birefringence interferometer composed of a short polarization-maintaining photonic crystal fiber (PM-PCF), a 3-dB fiber coupler, and polarization controllers. The PM-PCF used as a sensor head was 2 cm long, which is the shortest length for a sensing element compared to other polarimetric fiber strain sensors using a PM-PCF. The proposed sensor showed a strain sensitivity of ${\sim}0.87pm/{\mu}{\varepsilon}$ with a strain measurement range from 0 to $8m{\varepsilon}$. The temperature sensitivity was also investigated and measured as approximately $-12pm/^{\circ}C$, when ambient temperature changed from 30 to $100^{\circ}C$. This temperature sensitivity is about 82 times smaller than that of conventional polarization-maintaining fiber (approximately $-990pm/^{\circ}C$). In particular, from a practical perspective we have experimentally and theoretically confirmed that the wavelength selected for the indicator dip location does not make a significant difference in the strain sensitivity.