• 제목/요약/키워드: sensor-sensitivity

검색결과 1,900건 처리시간 0.029초

효모균을 이용한 BOD Biosensor (Yeast Loading BOD Biosensor)

  • 김말남
    • 한국균학회지
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    • 제23권4호통권75호
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    • pp.354-358
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    • 1995
  • 용존 유기물의 농도를 BOD로 신속히 측정하여 폐수처리 공정에 feed back할 수 있는 Yeast BOD sensor 를 제작하여 BOD 측정의 거동을 조사하였다. BOD sensor의 감응도는 yeast의 활성이 가장 높은 pH 7.0 및 온도 $30^{\circ}C$에서 가장 높게 나타났다. Sensor에 충전되는 효모의 양도 감응도에 영향을 미치며 투석막 단위면적당 $ 0.14\;mg/cm^2$가 최적의 균체량이었다. 오염물질의 종류에 따라 BOD sensor의 출력 신호가 다르게 나타났으며 각각의 오염물질 속에 효모균를 전처리 시킨 후 sensor에 충전할 경우 sensor 의 감응도가 크게 증가하였다.

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전극평형전위차 가스 센싱 메커니즘을 적용한 일산화탄소 소형 전위차센서의 특성 향상에 관한 연구 (A Scientific Approach for Improving Sensitivity and Selectivity of Miniature, Solid-state, Potentiometric Carbon Monoxide Gas Sensors by Differential Electrode Equilibria Mechanism)

  • 박준영;김지현;박가영
    • 한국세라믹학회지
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    • 제47권1호
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    • pp.92-96
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    • 2010
  • Based on the differential electrode equilibria approach, potentiometric YSZ sensors with semiconducting oxide electrodes for CO detection are developed. To improve the selectivity, sensitivity and response-time of the sensor, our strategy includes (a) selection of an oxide with a semiconducting response to CO, (b) addition of other semiconducting materials, (c) addition of a catalyst (Pd), (d) utilization of combined p- and n-type electrodes in one sensor configuration, and (e) optimization of operating temperatures. Excellent sensing performance is obtained by a novel device structure incorporating $La_2CuO_4$ electrodes on one side and $TiO_2$-based electrodes on opposite substrate faces with Pt contacts. The resulting response produces additive effects for the individual $La_2CuO_4$ and $TiO_2$-based electrodes voltages, thereby realizing an even higher CO sensitivity. The device also is highly selective to CO versus NO with minor sensitivity for NO concentration, compared to a notably large CO sensitivity.

유한요소해석을 이용한 GIS용 AE 센서의 설계와 특성 (Design and Characteristics of AE Sensor for GIS by Finite Element Analys)

  • 홍재일;이병효;김일남;조태경;류주현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 학술대회 논문집 전문대학교육위원
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    • pp.52-55
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    • 2000
  • In this paper, the coupled and the non-coupled vibration mode AE sensor for GIS were simulated by finite element analysis and manufactured, and characterized. The maximum sensitivity was 64.3 dB when the resonant frequency of the coupled vibration mode AE sensor was 166 kHz and the maximum sensitivity was 58.9 dB when the resonant frequency of the non-coupled mode AE sensor was 265 kHz. The coupled vibration mode AE sensor responded higher than the non-coupled vibration mode AE sensor at the partial discharge detection in GIS.

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전단 압저항 효과를 이용한 실리콘 압력센서 (Silicon Pressure Sensor Using Shear Piezoresistance Effect)

  • 권태하;이우일
    • 대한전자공학회논문지
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    • 제25권3호
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    • pp.307-314
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    • 1988
  • The thin, square-diaphragm silicon pressure sensor utilizing shear piezoresistance effect was designed and fabricated and its characteristics were examined. The sensor has only one diffused resistor, whereas conventional full-bridge sensor has four. Sensitivity is somewhat lower but temperature compensation is easier than the latter. The proposed sensor was fabricated with only one p-type diffused resistor of the dimension of 113x85\ulcorner\ulcornerlocated near the center of the edge of the diaphragm. The resistor was at 45\ulcornerwith the edge of the diaphragm. The sensitivity of the sensor was 36\ulcorner/V\ulcornermHg and was linear in the pressure range from 0 to 300 mmHg. The temperature coefficient without temperature compensation was 55 ppm/\ulcorner and it was decreased to about 0.17 mmHg/\ulcorner with compensation in the range from 10 to 60\ulcorner.

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Cu-Ni 박막 스트레인 게이지를 이용한 다이어프램식 압력 센서-II:압력 센서의 설계 제작의 특성 (Diaphragm-Type Pressure Sensor with Cu-Ni Thin Film Strain Gauges-II : Design Fabrication and Characteristics of a Pressure Sensor)

  • 민남기;전재형;박찬원
    • E2M - 전기 전자와 첨단 소재
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    • 제10권10호
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    • pp.1022-1028
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    • 1997
  • In this paper we present the construction details and output characteristics of a diaphragm-type pressure sensor with Cu-Ni(53:47) thin-film strain gauges. In order to improve the sensitivity and the temperature compensation two circumferential gauges are placed near the center of the diaphragm and two radial gauges are located near the edge. For all the gauges the relative change in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output is found to be linear over the entire pressure range(0-30kfg/cm$^2$)and the output sensitivity obtained is 1.6mV/V. The maximum nonlinearity observed in output characteristics is 0.35%FS for 5V excitation and the hysteresis is less than 0.1%FS.

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$WO_3$ 박막을 이용한 $NO_x$ 센서의 제조 및 가스감도 특성 (Fabrication and Gas-Sensing Characteristics of $NO_x$ Sensors using $WO_3$ Thin Films)

  • 유광수;김태송;정형진
    • 한국세라믹학회지
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    • 제32권12호
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    • pp.1369-1376
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    • 1995
  • The WO3 thin-film NOx sensor which is of practical use and includes the heater and the temperature sensor was fabricated. The WO3 thin films as a gas-sensing layer was deposited at ambient temperature in a high-vacuum resistance heated evaporator. The highest sensitivity of the WO3 thin-film sensor to NOx was obtained under the condition of the annealing temperature of 50$0^{\circ}C$ and the operating temperature of 30$0^{\circ}C$. The gas sensing characteristics of this sensor was excellent, i.e. high sensitivity (Rgas/Rair in 3 ppm NO2=53) and fast response time (4 seconds).

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CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging

  • Jang, Juneyoung;Heo, Wonbin;Kong, Jaesung;Kim, Young-Mo;Shin, Jang-Kyoo
    • 센서학회지
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    • 제30권5호
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    • pp.295-299
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    • 2021
  • In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

탄환 충격파 측정용 방수 음향센서 개발 (Development of Waterproof Acoustic Sensor for Shockwave Measurement)

  • 허신;이덕규
    • 센서학회지
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    • 제28권5호
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    • pp.318-322
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    • 2019
  • In shooting training, an impact point identification system that uses the impact wave of the bullet to check the impact point in the target plate has been recently used. Acoustic sensors used in these systems must be able to detect shock waves of high sound pressure levels and be both waterproof and dustproof for rainy weather and dusty environments, respectively. In this study, membranes with excellent waterproof, dustproof, and sound transmitting characteristics were selected through a characteristics test; a protection cap was installed to install the selected materials. After coupling the produced protection cap to the acoustic sensor housing, the sensitivity and phase characteristics of the acoustic sensor were checked. Through the waterproof and dustproof test, the performances of its sensitivity and phase characteristics were confirmed. Finally, the normal shockwave of a 5.56 mm diameter bullet was measured using a shockwave detection signal collecting plate equipped with a prototype of the acoustic sensor at a 100 m firing range.

Capacitive force sensor

  • Miyazawa, S.;Usui, Y.;Suzuki, M.;Baba, S.
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1994년도 Proceedings of the Korea Automatic Control Conference, 9th (KACC) ; Taejeon, Korea; 17-20 Oct. 1994
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    • pp.611-615
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    • 1994
  • In this paper, the sensitivity, linearity and temperature drift characteristics of various capacitive force sensors are evaluated and compared using new experimental methods. In particular, two designs were employed to reduce temperature drift. Both types of sensor use high-sensitivity Al coated PET film, and their externals are miniaturized. The first has a layered design consisting of two dielectric substances with different temperature characteristics. The prototype of this design had a temperature drift of only 0.1% of the sensor's capacity in the 20-80.deg. C range. The second type uses both a dummy sensor ind an active sensor with the same characteristics. The temperature drift of the prototype was one-fifth the temperature drift of a single sensor.

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PDMS(Polydimethylsiloxane)의 열경화조건에 따른 크랙 이용 센서 감도 최적화 (Optimization of Crack Based Sensor Sensitivity According to Thermal Curing Conditions of PDMS (Polydimethylsiloxane))

  • 황인주;윤상석;최용환
    • 열처리공학회지
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    • 제36권4호
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    • pp.237-241
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    • 2023
  • Recently, research on flexible sensors for personal health management has been gaining attention. In this study, we fabricated a crack-based flexible sensor in thin film form to measure the pulse on the wrist. We evaluated the characteristics of the sensor based on the curing conditions of the PDMS (Polydimethylsiloxane) film to optimize the sensor's gauge factor. The modulus of PDMS varies depending on the curing conditions. In this case, the modulus of PDMS has a significant influence on crack formation, leading to changes in the sensitivity of the sensor. This study examined the changes in the gauge factor associated with these variations.