• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.52.2-52.2
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• 2008

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.22-27
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• 1992

The cyclic voltammogram characteristics at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics/(($10^{-3}$M KCI + p-Si powders) and /(($10^{-4}$M CsNO$_3$ + n-GaAs powders) suspension interfaces have been studied using the microelectrophoresis and the cyclic voltammetric method. The negatively charged ions are specifically absorbed on the virgin and the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics surfaces. The zeta potentials of the p-Si and n-GaAs colloidal semiconductors are + 41mV and -44.8mV, respectively. The magnetization effects act as potential barriers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The positivelely charged p-Si and the negatively charged n-GaAs colloidal semiconductors act as potential barriers at the virgin SrO${\cdot}6Fe_{2}O_{3}$ interfaces. On the other hand, the charged p-Si and n-GaAs colloidal semiconductors act as potential barrier scavengers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The magnetization effects and the charged colloidal semiconductor effects are irreversible and interdependent.

• Ceramist
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• v.22 no.4
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• pp.452-463
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• 2019

A quartz glass crucible is the essential material for manufacturing silicon ingots such as semiconductors and solar cells. Quartz glass crucibles for semiconductors and solar cells are made similar, but differ in surface purity, structure and durability. Recently, ultra high purity synthetic glass crucibles for semiconductors have become more important due to foreign problems. In Korea, it has succeeded in producing 28-inch quartz glass crucibles through the past 10 years. However, 32-inch synthetic quartz glass for the production of silicon ingots for semiconductors is not up to the level of advanced technology, and the technology gap is expected to be 2 to 3 years. In order to overcome these technological gaps and localize synthetic quartz glass ware, close cooperation between production companies and demand companies and localization of synthetic quartz glass powder must also be made. In addition, if government support can be added, faster results can be expected.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.11-19
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• 2023

Recently with the rapid advancement of artificial intelligence (AI) technologies such as Chat GPT, AI semiconductors have become important. AI technologies require the ability to process large volumes of data quickly, as they perform tasks such as big data processing, deep learning, and algorithms. However, AI semiconductors encounter challenges with excessive power consumption and data bottlenecks during the processing of large-scale data. Thus, the latest packaging technologies are required for AI semiconductor computations. In this study, the authors have described packaging technologies applicable to AI semiconductors, including interposers, Through-Silicon-Via (TSV), bumping, Chiplet, and hybrid bonding. These technologies are expected to contribute to enhance the power efficiency and processing speed of AI semiconductors.

• Journal of Korea Trade
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• v.25 no.6
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• pp.78-104
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• 2021

Purpose - Semiconductors are a significant export item for Korea that is expected to continue to contribute significantly to the Korean economy in the future. Thus, the semiconductor industry is a critical component in the 4th Industrial Revolution and is expected to continue growing as the non-face-to-face economy expands as a result of the COVID-19 pandemic. In this context, this paper aims to empirically investigate how semiconductors are imported and exported in Korea from a global supply chain perspective by analysing import and export data at the micro-level. Design/methodology - This study conducts a multifaceted analysis of the global supply chain for semiconductors and related equipment in Korea by examining semiconductor imports and exports by semiconductor type, year, target country, mode of transportation, airport/port, and domestic region, using import/export micro-data. The visualisation, flow analysis, and Bayesian Network methodologies were used to compensate for the limitations of each method. Findings - Korea is a major exporter of semiconductor memory and has the world's highest competitiveness but is relatively weak in the field of system semiconductors. The trade deficit in 'semiconductor equipment and parts' is clearly growing. As a result, continued investment in 'system semiconductors' and 'semiconductor equipment and parts' technology development is necessary to boost exports and ensure a stable supply chain. Originality/value - Few papers on semiconductor trade in Korea have been published from the perspective of the global supply chain or value chain. This study contributes to the literature in this area by focusing on import and export data for the global supply chain of the Korean semiconductor industry using a variety of approaches. It is our hope that the insights gained from this study will aid in the advancement of SCM research.

• Smart Media Journal
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• v.13 no.3
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• pp.36-44
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• 2024

Recently, large-scale artificial intelligence (AI) such as ChatGPT have been developed, and as AI is used across various industrial fields, attention is focused on AI chips (semiconductors). AI chips refer to chips designed for calculations for AI algorithms, and many companies at domestic and abroad, such as NVIDIA, Tesla, and ETRI, are developing AI chips. In this paper, we survey research trends on nine types of AI chips. Currently, many attempts have been made to improve the computational performance of most AI chips, and semiconductors for specific purposes are also being designed. In order to compare various AI semiconductors, each chip is analyzed in terms of operation unit, speed, power, and energy efficiency. We introduce currently existing optimization methodologies for AI computation. Based on this, future research directions for AI semiconductors are presented in this paper.

• Journal of Technology Innovation
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• v.26 no.3
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• pp.37-68
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• 2018

Since the 20th century, automobiles, which are the most common means of transportation, have been evolving as the use of electronic control devices and automotive semiconductors increases dramatically. Automotive semiconductors are a key component in automotive electronic control devices and are used to provide stability, efficiency of fuel use, and stability of operation to consumers. For example, automotive semiconductors include engines control, technologies for managing electric motors, transmission control units, hybrid vehicle control, start/stop systems, electronic motor control, automotive radar and LIDAR, smart head lamps, head-up displays, lane keeping systems. As such, semiconductors are being applied to almost all electronic control devices that make up an automobile, and they are creating more effects than simply combining mechanical devices. Since automotive semiconductors have a high data rate basically, a microprocessor unit is being used instead of a micro control unit. For example, semiconductors based on ARM processors are being used in telematics, audio/video multi-medias and navigation. Automotive semiconductors require characteristics such as high reliability, durability and long-term supply, considering the period of use of the automobile for more than 10 years. The reliability of automotive semiconductors is directly linked to the safety of automobiles. The semiconductor industry uses JEDEC and AEC standards to evaluate the reliability of automotive semiconductors. In addition, the life expectancy of the product is estimated at the early stage of development and at the early stage of mass production by using the reliability test method and results that are presented as standard in the automobile industry. However, there are limitations in predicting the failure rate caused by various parameters such as customer's various conditions of use and usage time. To overcome these limitations, much research has been done in academia and industry. Among them, researches using data mining techniques have been carried out in many semiconductor fields, but application and research on automotive semiconductors have not yet been studied. In this regard, this study investigates the relationship between data generated during semiconductor assembly and package test process by using data mining technique, and uses data mining technique suitable for predicting potential failure rate using customer bad data.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2148-2154
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• 2013

Three push-pull organic semiconductors, TPA-$Th_3$-MMN (1), TPA-ThTT-MMN (2), and TPA-ThDTT-MMN (3), comprising a triphenylamine donor and a methylene malononitrile acceptor linked by various ${\pi}$-conjugated thiophene units were synthesized, and the effects of the ${\pi}$-conjugated bridging unit on the photovoltaic characteristics of solution-processed small-molecule organic solar cells based on these semiconductors were investigated. Planar bridging units with extended ${\pi}$-conjugation effectively facilitated intermolecular ${\pi}-{\pi}$ packing interactions in the solid state, resulting in enhanced $J_{sc}$ values of the SMOSCs fabricated with bulk heterojunction films.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.1-9
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• 2004

Analytical expressions for breakdown voltages of abrupt pn junction in GaP, GaAs and InP of III-V binary semiconductors was induced. Getting analytical breakdown voltage, effective ionization coefficients were extracted using ionization coefficient parameters for each materials. The result of analytical breakdown voltages followed by ionization integral agrees well with numerical and experimental results within 10% in error.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.47-49
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• 1995

We report the spectroscopic properties of column-III nitrifies of GaN, GaInN, and AlGaN. The column-III nitride semiconductors are promising materials to realize the current-injection-type blue-and ultraviolet (UV)-light-emitting devices with high performance. To acheive the lasing with low threshold, the devices are must constructed to double heterostructure by succesive epitaxial growth technique, and we must confine the carriers in the potential barrier and optical confinement in wave guide between barrier and active layers has different refractive index. The refractive index of column-III nitride semiconductors, however, are rarely reported. The measured refractive index was 2.9, and the observed characteristic peak near the enrgy gap was analysed using a dielectric function and may due to excitonic contribution.