Tunable Electron g Factor and High Asymmetrical Stark Effect in InAsN Dilute Nitride Quantum Dots

  • Zhang, X.W. (School of Electrical and Electronic Engineering, Nanyang Technological University) ;
  • Fan, W.J. (School of Electrical and Electronic Engineering, Nanyang Technological University) ;
  • Li, S.S. (Institute of Semiconductors, Chinese Academy of Sciences) ;
  • Xia, J.B. (Institute of Semiconductors, Chinese Academy of Sciences)
  • Published : 2008.12.10