• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.134-142
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• 2010

A comparative study on the trade-off between the drive current and the total gate capacitance in double-gate (DG) and triple-gate (TG) FinFETs is performed by using 3-D device simulation. As the first result, we found that the optimum ratio of the hardmask oxide thickness ($T_{mask}$) to the sidewall oxide thickness ($T_{ox}$) is $T_{mask}/T_{ox}$=10/2 nm for the minimum logic delay ($\tau$) while $T_{mask}/T_{ox}$=5/1~2 nm for the maximum intrinsic gate capacitance coupling ratio (ICR) with the fixed channel length ($L_G$) and the fin width ($W_{fin}$) under the short channel effect criterion. It means that the TG FinFET is not under the optimal condition in terms of the circuit performance. Second, under optimized $T_{mask}/T_{ox}$, the propagation delay ($\tau$) decreases with the increasing fin height $H_{fin}$. It means that the FinFET-based logic circuit operation goes into the drive current-dominant regime rather than the input gate load capacitance-dominant regime as $H_{fin}$ increases. In the end, the sensitivity of $\Delta\tau/{\Delta}H_{fin}$ or ${{\Delta}I_{ON}}'/{\Delta}H_{fin}$ decreases as $L_G/W_{fin}$ is scaled-down. However, $W_{fin}$ should be carefully designed especially in circuits that are strongly influenced by the self-capacitance or a physical layout because the scaling of $W_{fin}$ is followed by the increase of the self-capacitance portion in the total load capacitance.

• Journal of IKEEE
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• v.16 no.2
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• pp.131-137
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• 2012

This paper is study on a new high efficiency DC-DC converter of discontinuous conduction mode (DCM) with zero voltage switching (ZVS). The converters of high efficiency are generally made that the power loss of the used semiconductor switching devices is minimized. The proposed converter is accomplished that the turn-on operation of switches is on zero current switching (ZCS) by DCM. The converter is also applicable to a new quasi-resonant circuit to achieve high efficiency converter. The control switches using in the converter are operated with soft switching, that is, ZVS and ZCS by quasi-resonant method. The control switches are operated without increasing their voltage and current stresses by the soft switching technology. The result is that the switching loss is very low and the efficiency of the converter is high. The soft switching operation and the system efficiency of the proposed DCM-ZVS converter are verified by digital simulation and experimental results.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.131-136
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• 2015

This paper presents a wide dynamic range complementary metal oxide semiconductor (CMOS) image sensor with column capacitor and feedback structure. The designed circuit has been fabricated by using $0.18{\mu}m$ 1-poly 6-metal standard CMOS technology. This sensor has dual mode operation using combination of active pixel sensor (APS) and passive pixel sensor (PPS) structure. The proposed pixel operates in the APS mode for high-sensitivity in normal light intensity, while it operates in the PPS mode for low-sensitivity in high light intensity. The proposed PPS structure is consisted of a conventional PPS with column capacitor and feedback structure. The capacitance of column capacitor is changed by controlling the reference voltage using feedback structure. By using the proposed structure, it is possible to store more electric charge, which results in a wider dynamic range. The simulation and measurement results demonstrate wide dynamic range feature of the proposed PPS.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.12
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• pp.1889-1894
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• 2017

Global automobile manufacturers are developing electric vehicles (EVs) to eliminate the pollutant emissions from internal combustion vehicles and to minimize fossil fuel consumptions for the future generations. However, EVs have a disadvantage of shorter traveling distance than that of conventional vehicles. To answer this shortfall, more batteries are installed in the EV to satisfy the consumer expectation for the driving range. However, as the energy capacity of the battery mounted in the EV increases, the amount of heat generated by each cell also increases. Naturally, a better battery thermal management system (BTMS) is required to control the temperature of the cells efficiently because the appropriate thermal environment of the cells greatly affects the power output from the battery pack. Typically, the BTMS is divided into an active and a passive system depending on the energy usage of the thermal management system. Heat exchange materials usually include gas and liquid, semiconductor devices and phase change material (PCM). In this study, an application of PCM for a BTMS was investigated to maintain an optimal battery operating temperature range by utilizing characteristics of a PCM, which can accumulate large amounts of latent heat. The system was modeled using Dymola from Dassault Systems, a multi-physics simulation tool. In order to compare the relative performance, the BTMS with the PCM and without the PCM were modeled and the same battery charge/discharge scenarios were simulated. Number of analysis were conducted to compare the battery cooling performance between the model with the aluminum case and PCM and the model with the aluminum case only.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1833-1839
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• 2014

In this paper, a systematic demapping algorithm for three-dimensional (3-D) lattice signal constellations is presented. The algorithm consists of decision of an octant, computation of a distance from the origin, and determination of the coordinates of a symbol. Since the algorithm can be extended systematically, it is applicable to the larger lattice constellations. To verify the algorithm, 3-D signal transmission systems with field programmable gate array (FPGA) and $Matlab^{(R)}$ are implemented. And they are exploited to carry out computer simulation. As a result, both hardware and software based systems produce almost the same symbol error rates (SERs) in an additive white Gaussian noise (AWGN) environment. In addition, the hardware based system implemented with an FPGA generates waveforms of 3-D signals and recovers the original binary sequences perfectly. Those results confirm that the algorithm and the implemented 3-D transmission system operate correctly.

• The Transactions of the Korea Information Processing Society
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• v.4 no.11
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• pp.2914-2922
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• 1997

For FA (factory automation) and ATE (automatic test equipment) in the industrial area, the standard bus needs to increase the system performance of multiprocessor environment. VME(versa module european package format) bus is appropriated to the standard bus but has features of small package and low board density. Beside, the density of board and semiconductor have grown to become significant issues that affect development time, project cost and field diagnostics. To fit this trend, in this paper, we composed Revision C.1 (IEEE std. P1014-1987) of the integrated environment for the main function such as arbitration, interrupt and interface between, VMEbus and several control modules Also the designed, VME system controller is implemented on FPGA that can be located even into slot 1. The control and function modules are coded with VHDL mid-fixed description method and then those operations are verified by simulation. As a result of experiment, we confirmed the most important that is the operation of Bus timer about Bus error signal should occur within $56{\mu}m$, and both control and function modules have the reciprocal operation correctly. Thus, the constructed VHDL library will be able to apply the system based VMEbus and ASIC design.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.519-527
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• 1997

The micro crack was occurred where the stress concentrated by the thermal stress which was induced during the cooling period after molding process or by the various reliability tests. In order to estimate the possibility of development from inside micro crack to outside fracture, the fracture toughness of EMC should be measured under the various applicable condition. But study was conducted very rarely for the above area. In order to provide a was to decide the fracture resistance of EMC (Epoxy Molding Compound) of plastic package which is produced by using transfer molding method, measuring fracture is studied. The specimens were made with various EMC material. The diverse combination of test conditions, such as different temperature, temperature /humidity conditions, different filler shapes, and post cure treatment, were tried to examine the effects of environmental condition on the fracture toughness. This study proposed a way which could improve the reliability of LOC(Lead On Chip) type package by comparing the measured $J_{IC}$ of EMC and the calculated J-integral value from FEM(Finite Element Method). The measured $K_{IC}$ value of EMC above glass transition temperature dropped sharply as the temperature increased. The $K_{IC}$ was observed to be higher before the post cure treatment than after the post cure treatment. The change of $J_{IC}$ was significant by time change. J-integral was calculated to have maximum value the angle of the direction of fracture at the lead tip was 0 degree in SOJ package and -30 degree in TSOP package. The results FEM simulation were well agreed with the results of measurement within 5% tolerance. The package crack was proved to be affected more by the structure than by the composing material of package. The structure and the composing material are the variables to reduce the package crack.ack.

• Nuclear Engineering and Technology
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• v.43 no.6
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• pp.567-572
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• 2011

A sensitivity analysis of the methods used to evaluate the transport properties of a CdZnTe detector was performed using two different radiations (${\alpha}$ particle and gamma-ray) emitted from an $^{241}Am$ source. The mobility-lifetime products of the electron-hole pair in a planar CZT detector ($5{\times}5{\times}2\;mm^3$) were determined by fitting the peak position as a function of biased voltage data to the Hecht equation. To verify the accuracy of these products derived from ${\alpha}$ particles and low-energy gamma-rays, an energy spectrum considering the transport property of the CZT detector was simulated through a combination of the deposited energy and the charge collection efficiency at a specific position. It was found that the shaping time of the amplifier module significantly affects the determination of the (${\mu}{\tau}$) products; the ${\alpha}$ particle method was stabilized with an increase in the shaping time and was less sensitive to this change compared to when the gamma-ray method was used. In the case of the simulated energy spectrum with transport properties evaluated by the ${\alpha}$ particle method, the peak position and tail were slightly different from the measured result, whereas the energy spectrum derived from the low-energy gamma-ray was in good agreement with the experimental results. From these results, it was confirmed that low-energy gamma-rays are more useful when seeking to obtain the transport properties of carriers than ${\alpha}$ particles because the methods that use gamma-rays are less influenced by the surface condition of the CZT detector. Furthermore, the analysis system employed in this study, which was configured by a combination of Monte Carlo simulation and the Hecht model, is expected to be highly applicable to the study of the characteristics of CZT detectors.