• 제목/요약/키워드: semiconductor laser

검색결과 525건 처리시간 0.026초

포인터 Laser 거리센서를 이용한 장착된 PCB 부품의 들뜸 검출력 향상에 대한 연구 (A Researches into the Improvement of a floating detection power using the point Laser Sensor)

  • 박종협;정종대
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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    • pp.43-46
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    • 2006
  • 본 논문은 PCB(printed circuit board)에 납땜이 되어 장착된 부품들의 들뜸 상태 검사 알고리즘에 관한 연구이다. 전자산업의 발달로 제품이 소형화, SMD화, 고집적화가 함께 추구되고 있으며, 특히 리드(lead)의 fine-pitch화 현상으로 인해 부품의 들뜸 상태 검사의 중요성은 매우 부각되고 있다. 따라서 본 논문에서는 2차원 포인터 레이저 거리센서를 이용하여 PCB위에 장착된 부품의 들뜸 상태를 검사하고자 한다. 이를 위해 레이저 측정용 장치를 제작하여 부품의 들뜸 검사 알고리즘의 유용성 및 들뜸의 상태 판단 여부를 확인하였다. 본 논문에서 사용한 기준 부품은 각칩 형태로 된 저항, 커패시터와 BGA 및 QFP이며 이 부품들을 이용하여 리드와 바디의 들뜸 상태를 검사하였다. 검사 기준으로 리드의 들뜸은 Scan Teaching 방식을 이용하였으며, 바디의 들뜸은 단차 Teaching 방식을 이용하였다.

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Compact and precision range finder using self-mixing semiconductor laser

  • Shinohara, Shigenobu;Andou, Minoru;Yoshida, Hirofumi;Ikeda, Hiroaki;Miyata, Masafumi;Yoshida, Jun-Ichi;Nishide, Ken-Ichi;Sumi, Masao
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1989년도 한국자동제어학술회의논문집; Seoul, Korea; 27-28 Oct. 1989
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    • pp.972-978
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    • 1989
  • Proposed is improved compact self-mixing type semiconductor-laser range finder, which measures mode-hop time interval (MHI). Measurement error caused by the fluctuation of MHI is greatly reduced by averaging many contiguous MHI's. The main cause of measurement error 1.5% at ranges from 0.1m to 0.8m is attributed to the optical phase change of a returned light from a focusing lens. Accuracy improvement by stabilization of the returned light is suggested.

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Lasing of Coupled Guided Modes in Modified Hollow Hexagonal Semiconductor Cavities

  • Moon, Hee-Jong;Lee, Jin-Woong;Hyun, Kyung-Sook;Jeong, Dae Cheol
    • Journal of the Optical Society of Korea
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    • 제18권4호
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    • pp.377-381
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    • 2014
  • Coupled guided modes, proposed in various modified hollow hexagonal cavities each attached internally to a hexagon, were demonstrated by investigating the laser oscillations in semiconductor cavities. The mode spacing between two adjacent lasing peaks decreased as the size of the internal hexagon increased, due to the increased round-trip length of the coupled guided modes. The linear dependency of the inverse mode spacing to the calculated round-trip length strongly confirmed the lasing of the coupled guided modes. The proposed modes in common-sized external cavities showed resonance structure that could be adjusted widely by controlling the size of the internal hexagon.

반도체 레이저 다이오드의 횡방향 1차모드의 특성 해석 (An analysis of the lateral first-order mode characteristics for the semiconductor laser diodes)

  • 김형래;곽계달
    • 전자공학회논문지A
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    • 제32A권12호
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    • pp.91-100
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    • 1995
  • This paper represents the lateral first-order mode characteristics for the semiconductor laser diodes using a two-dimensional numerical simulator. In order to analyze the lateral first-order mode characteristics, Helmholtz wave equation is solved twice for the lateral fundamental and the first-order mode considering the mode gain, total losses, and the recombination rate due to the stimulated emission radiation for the each mode independantly. Through this procedure, we find that the lateral first-order mode was easily guided as increasing the stripe width for the index-guiding structures, and that the lateral first-order mode seems to be dominated in the distribution of total light intensity when its output power reaches nearly half of that of the lateral fundamental mode. This results may be used to design the device structure which guides only the lateral fundamental mode.

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박막과 압전 재료 결합에 관한 연구 (Study on the Bonding Process between Thin film and Piezoelectric Materials)

  • 정우석;김기범;홍철운
    • 한국전기전자재료학회논문지
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    • 제18권11호
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    • pp.1014-1018
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    • 2005
  • The purpose of this study is to obtain strong bond strength at the interface between piezoelectric substrates and semiconductor thin films to be applied for the manufacture of high-performance acoustic wave semiconductor coupled device. For this purpose, we have compared and examined the effects of different surface treatment methods on hydrophile properties at the surface of the piezoelectric substrates. Moreover, we have observed the effect of microwave and laser on the elimination of water molecules at the interface. As for the piezoelectric substrates, dry method for surface treatment was found to be superior in the control of hydrophilicity of the surface compared to wet method. On the other hand, both microwave and laser were found to be effective in the elimination of water molecules in the interface.

Error Compensation of Laser Interferometer for Measuring Displacement Using the Kalman Filter

  • Park, Tong-Jin;Lee, Yong-Woo;Wang, Young-Yong;Han, Chang-Soo;Lee, Nak-Ku;Lee, Hyung-Wok;Choi, Tae-Hoon;Na, Kyung-Whan
    • 반도체디스플레이기술학회지
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    • 제3권2호
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    • pp.41-46
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    • 2004
  • This paper proposes a robust discrete time Kalman filter (RDKF) for the dynamic compensation of nonlinearity in a homodyne laser interferometer for high-precision displacement measurement and in real-time. The interferometer system is modeled to reduce the calculation of the estimator. A regulator is applied to improve the robustness of the system. An estimator based on dynamic modeling and a zero regulator of the system was designed by the authors of this study. For real measurement, the experimental results show that the proposed interferometer system can be applied to high precision displacement measurement in real-time.

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Luminescence characteristics of amorphous GaN quantum dots prepared by laser ablation at room temperature

  • Shim, Seung Hwan;Yoon, Jong-Won;Koshizaki, Naoto;Shim, Kwang Bo
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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    • pp.109-116
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    • 2003
  • Amorphous GaN Quantum dots(a-GaN QDs) with particle diameters less than bohr radius(~11nm) were successfully fabricated at room temperature by a laser ablation of high densified GaN target. Transmission electron microscopy, SAED diffraction pattern and X-ray photoelectron spectroscopy confirmed the presence of a-GaN QDs with particle size of 7.9, 6.9, 4.4nm under the Ar gas pressures of 50, 100 and 200 Pa, respectively. The room temperature PL and absorbance spectra showed a strong band emission centered at 3.9 eV in a-GaN QDs made under the gas pressures of 100 and 200 Pa, which is nearly 0.5eV blueshifted with respect to the bulk crystal band gap.

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Generation of 1.5 Gbps Pseudo-random Binary Sequence Optical Signals by Using a Gain Switched Fabry-Perot Semiconductor Laser

  • Kim Dae-Geun;Woo Sae-Yoon;Kim Dong-Kwan;Hwang Taek-Yong;Park Seung-Han;Kim Dug Young
    • Journal of the Optical Society of Korea
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    • 제9권3호
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    • pp.103-106
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    • 2005
  • Recently, polymethyl methacrylate based plastic optical fibers (POFs) have attracted considerable attention as a potential medium for local area network (LAN) and home network applications. Since the POFs have very low optical loss at around 650mm, in particular, it becomes quite important to develop GHz transmitters operating at this wavelength for high bit rate optical transmission applications of the POFs. In this paper, we present generation of ${\geq}1.5 Gbps$ pseudo-random binary sequence optical signals by using a gain switched InGaA1P Fabry-Perot semiconductor laser with a high frequency filter, operating at 650mm, and the application of these signals to bandwidth measurement of POFs.

Wide bandgap III-nitride semiconductors: opportunities for future optoelectronics

  • Park, Yoon-Soo
    • 한국결정성장학회지
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    • 제12권1호
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    • pp.11-20
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    • 2002
  • The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

섭동이론을 이용한 반도체 레이저에서의 매개증폭 해석 (Analysis of parametric amplification in a semiconductor laser using perturbation theory)

  • 조성대;이창희;신상영
    • 한국광학회지
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    • 제11권3호
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    • pp.187-192
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    • 2000
  • 반도체 레이저의 비션형 특성에 의하여 발생하는 매개증폭에 대하여, 반도체 레이저 다이오드의 비율방정식을 섭동 이론을 이용하여 해석하고 그 결과에 대하여 논의하였다. 매개증폭에 의하여 발생하는 이득은 펌프 변조전류가 증가하여 이득된 공진주파수에 가까워질수록 증가하였으며, 바이어스 전류와 반도체 레이저의 감쇄상수가 증가할수록 감소하였다. 또한 큰 매개이득을 얻기 위해서는 펌프 변조전류와 신호 변조전류 사이의 위상을 정합시켜야 하며, 큰 신호 변조전류에서는 증포된 광 출력의 포화로 인하여 매개이득이 감소하였다.

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