• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.33-37
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• 2004

As the high speed and high integration of semiconductor devices and the generation of heat increases resulted in the effective heat dissipation influences on the performance and lifetime of semiconductor devices. The heat resistance or heat spread function of EMC(epoxy molding compound) which protects these devices became one of very important factors in the evaluation of semiconductor chips. Recently, silica, alumina, AlN(aluminum nitride) powders are widely used as the fillers of EMC. The filler loading in encapsulants was high up to about 80 vol%. A high loading of filler was improved low water absorption, low stress, high strength, better flowability and high thermal conductivity. In this study, the thermal properties were investigated through thermal, mechanical and microstructure. Thermophysical properties were investigated by laser flash and differential scanning calorimeter(DSC). For detailed inspection of materials, the samples were examined by SEM.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.18 no.1
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• pp.1-12
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• 2009

Presently, the semiconductor industry has the chronic problem. In the semiconductor industry, it has the semiconductor wafer, a package, the optical filter cut by using the saw blade, the mold, a laser etc. The cutting technique has the difficulty due to the rising of the production cost by the wearing of mold, the poor quality problem due to generated heat at the moment of cutting procedure and curve cutting etc. The goal of this time of national research and development project is develop the apparatus for solving the problem that the existing cutting technique has. The technology is so called waterjet abrasive method. This technology will be mainly applied to cut a semiconductor package and a wafer. Two important things to be considered are ripple effect(in other words, the scale of a market) and simplicity of an application.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.38-47
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• 2023

Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

• Journal of the Korean Society for Nondestructive Testing
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• v.27 no.3
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• pp.246-254
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• 2007

The scanning laser source (SLS) technique is a promising new laser ultrasonic tool for the detection of small surface-breaking defects. The SLS approach is based on monitoring the changes in laser-generated ultrasound as a laser source is scanned over a defect. Changes in amplitude and frequency content are observed for ultrasound generated by the laser over uniform and defective areas. The SLS technique uses a point or a short line-focused high-power laser beam which is swept across the test specimen surface and passes over surface-breaking or subsurface flaws. The ultrasonic signal that arrives at the Rayleigh wave speed is monitored as the SLS is scanned. It is found that the amplitude and frequency of the measured ultrasonic signal have specific variations when the laser source approaches, passes over and moves behind the defect. In this paper, the setup for SLS experiments with full B-scan capability is described and SLS signatures from small surface-breaking and subsurface flaws are discussed using a point or short line focused laser source.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.377-380
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• 2012

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

• Laser Solutions
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• v.15 no.4
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• pp.12-15
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• 2012

On behalf of the existing semiconductor process, the electronic devices to low-cost mass production to mass print the way, the research for development of roll-to-roll printing process is actively underway. This study was performed in about the research on the manufacturing technology of the printing roll used in the printing process of electronic devices. The indirect laser imprinting technology was used to create printable roll, and after coating copper on the surface of steel and thereon after coating polymer, after removing the polymer on the surface of roll, the printable roll was made. The laser system and roll feeder system were constructed and control program was developed. We has found the optimal conditions to perform laser patterning experiments using a system developed and We can make the minimum line width of 18 ${\mu}m$.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.96-99
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• 1998

In this study, a novel long term stabilization method of optical feedback for the resonant cavity coupled semiconductor lasers is proposed, and its utility was shown experimentally. The proposed method is realized by using the pahse discriminator of optical feedback with high gain. The phase discriminating signal was obtained by the polarization spectroscopic technique using reflection light from the external reflector, which is a confocal Fabry-Perot cavity. Experimental result shows that stable control state can be maintained up to 20 hours. The period can be increased by reducing size of the system and/or fixing position stably of optical parts used, which were arranged on an optical table by using magnetic bases in this experiment. The proposed long-term stabilization method of optical feedack of a resonant external cavity coupled semiconductor laser is very useful for the field of high sensitivity measurement, and for the use in the laboratory level in particular.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.423-428
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• 2003

In a direct modulated semiconductor laser diode. the structural dependence of current blocking layers was studied in view of the leakage current reduction and the bandwidth expansion. To analyze the leakage current and the parasitic effects, the current-voltage derivation characteristics and the subtraction method were used, respectively. It was shown that the‘inin’type current blocking structure might be the best choice for the purpose of the static and dynamic characteristics.

• ETRI Journal
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• v.30 no.6
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• pp.833-843
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• 2008

The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.149-154
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• 2004

In the semiconductor and the optical industry a new transport system which can replace the conventional sliding system is required. These systems are driven by magnetic field and conveyer belt. The magnetic field damages semiconductor and contact force scratches the optical lens. The ultrasonic wave driven system can solve these problem. In this paper, the relationship of transporting speed according to the change of flexural beam shape and the effect of transporting speed according to the change of weight and amplification voltage are verified. The vibration behavior of flexural beam in the ultrasonic transport system is experimented using Laser Scanning Vibrometer.