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http://dx.doi.org/10.3807/KJOP.2003.14.4.423

The structural dependence of current blocking layers on the static and dynamic performances in a direct modulated semiconductor laser  

김동철 (한양대학교 전자전기제어계측공학과)
심종인 (한양대학교 전자전기제어계측공학과)
박문규 (삼성전자)
강중구 (삼성전자)
방동수 (삼성전자)
장동훈 (삼성전자)
어영선 (한양대학교 전자전기제어계측공학과)
Publication Information
Korean Journal of Optics and Photonics / v.14, no.4, 2003 , pp. 423-428 More about this Journal
Abstract
In a direct modulated semiconductor laser diode. the structural dependence of current blocking layers was studied in view of the leakage current reduction and the bandwidth expansion. To analyze the leakage current and the parasitic effects, the current-voltage derivation characteristics and the subtraction method were used, respectively. It was shown that the‘inin’type current blocking structure might be the best choice for the purpose of the static and dynamic characteristics.
Keywords
current blocking layers; 3 dB bandwidth; parasitic effect; subtraction method;
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