The structural dependence of current blocking layers on the static and dynamic performances in a direct modulated semiconductor laser
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김동철
(한양대학교 전자전기제어계측공학과)
심종인 (한양대학교 전자전기제어계측공학과) 박문규 (삼성전자) 강중구 (삼성전자) 방동수 (삼성전자) 장동훈 (삼성전자) 어영선 (한양대학교 전자전기제어계측공학과) |
1 |
Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking lasers
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DOI ScienceOn |
2 |
Planar BH InGaAsP/InP lasers with semi-insulating InP blocking layers grown by MOCVD
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3 |
High speed quantum well lasers and carrier transport effects
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4 |
Temperature dependence of electrical and optical modulation responses of quantum-well lasers
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DOI ScienceOn |
5 |
Frepuency response subtraction for simple measurement of intrinsic laser dynamic properties
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DOI ScienceOn |
6 |
Theoretical and experimental analysis of leakage current in InGaAsP BH lasers with pnpn current blocking lasers
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7 |
Analysis of leakage currents in 1.3 ㎛ InGaAsP real index-guided lasers
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DOI ScienceOn |
8 |
Long wavelength InGaAsP/Inp lasers for optical fiber communication systems
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9 |
Frequency response of 1.3 ㎛ InGaAsP high speed semiconductor lasers
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