• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.43-46
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• 2006

본 논문은 PCB(printed circuit board)에 납땜이 되어 장착된 부품들의 들뜸 상태 검사 알고리즘에 관한 연구이다. 전자산업의 발달로 제품이 소형화, SMD화, 고집적화가 함께 추구되고 있으며, 특히 리드(lead)의 fine-pitch화 현상으로 인해 부품의 들뜸 상태 검사의 중요성은 매우 부각되고 있다. 따라서 본 논문에서는 2차원 포인터 레이저 거리센서를 이용하여 PCB위에 장착된 부품의 들뜸 상태를 검사하고자 한다. 이를 위해 레이저 측정용 장치를 제작하여 부품의 들뜸 검사 알고리즘의 유용성 및 들뜸의 상태 판단 여부를 확인하였다. 본 논문에서 사용한 기준 부품은 각칩 형태로 된 저항, 커패시터와 BGA 및 QFP이며 이 부품들을 이용하여 리드와 바디의 들뜸 상태를 검사하였다. 검사 기준으로 리드의 들뜸은 Scan Teaching 방식을 이용하였으며, 바디의 들뜸은 단차 Teaching 방식을 이용하였다.

• 제어로봇시스템학회:학술대회논문집
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• 1989.10a
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• pp.972-978
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• 1989

Proposed is improved compact self-mixing type semiconductor-laser range finder, which measures mode-hop time interval (MHI). Measurement error caused by the fluctuation of MHI is greatly reduced by averaging many contiguous MHI's. The main cause of measurement error 1.5% at ranges from 0.1m to 0.8m is attributed to the optical phase change of a returned light from a focusing lens. Accuracy improvement by stabilization of the returned light is suggested.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.377-381
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• 2014

Coupled guided modes, proposed in various modified hollow hexagonal cavities each attached internally to a hexagon, were demonstrated by investigating the laser oscillations in semiconductor cavities. The mode spacing between two adjacent lasing peaks decreased as the size of the internal hexagon increased, due to the increased round-trip length of the coupled guided modes. The linear dependency of the inverse mode spacing to the calculated round-trip length strongly confirmed the lasing of the coupled guided modes. The proposed modes in common-sized external cavities showed resonance structure that could be adjusted widely by controlling the size of the internal hexagon.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.91-100
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• 1995

This paper represents the lateral first-order mode characteristics for the semiconductor laser diodes using a two-dimensional numerical simulator. In order to analyze the lateral first-order mode characteristics, Helmholtz wave equation is solved twice for the lateral fundamental and the first-order mode considering the mode gain, total losses, and the recombination rate due to the stimulated emission radiation for the each mode independantly. Through this procedure, we find that the lateral first-order mode was easily guided as increasing the stripe width for the index-guiding structures, and that the lateral first-order mode seems to be dominated in the distribution of total light intensity when its output power reaches nearly half of that of the lateral fundamental mode. This results may be used to design the device structure which guides only the lateral fundamental mode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1014-1018
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• 2005

The purpose of this study is to obtain strong bond strength at the interface between piezoelectric substrates and semiconductor thin films to be applied for the manufacture of high-performance acoustic wave semiconductor coupled device. For this purpose, we have compared and examined the effects of different surface treatment methods on hydrophile properties at the surface of the piezoelectric substrates. Moreover, we have observed the effect of microwave and laser on the elimination of water molecules at the interface. As for the piezoelectric substrates, dry method for surface treatment was found to be superior in the control of hydrophilicity of the surface compared to wet method. On the other hand, both microwave and laser were found to be effective in the elimination of water molecules in the interface.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.41-46
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• 2004

This paper proposes a robust discrete time Kalman filter (RDKF) for the dynamic compensation of nonlinearity in a homodyne laser interferometer for high-precision displacement measurement and in real-time. The interferometer system is modeled to reduce the calculation of the estimator. A regulator is applied to improve the robustness of the system. An estimator based on dynamic modeling and a zero regulator of the system was designed by the authors of this study. For real measurement, the experimental results show that the proposed interferometer system can be applied to high precision displacement measurement in real-time.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.109-116
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• 2003

Amorphous GaN Quantum dots(a-GaN QDs) with particle diameters less than bohr radius(~11nm) were successfully fabricated at room temperature by a laser ablation of high densified GaN target. Transmission electron microscopy, SAED diffraction pattern and X-ray photoelectron spectroscopy confirmed the presence of a-GaN QDs with particle size of 7.9, 6.9, 4.4nm under the Ar gas pressures of 50, 100 and 200 Pa, respectively. The room temperature PL and absorbance spectra showed a strong band emission centered at 3.9 eV in a-GaN QDs made under the gas pressures of 100 and 200 Pa, which is nearly 0.5eV blueshifted with respect to the bulk crystal band gap.

• Journal of the Optical Society of Korea
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• v.9 no.3
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• pp.103-106
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• 2005

Recently, polymethyl methacrylate based plastic optical fibers (POFs) have attracted considerable attention as a potential medium for local area network (LAN) and home network applications. Since the POFs have very low optical loss at around 650mm, in particular, it becomes quite important to develop GHz transmitters operating at this wavelength for high bit rate optical transmission applications of the POFs. In this paper, we present generation of ${\geq}1.5 Gbps$ pseudo-random binary sequence optical signals by using a gain switched InGaA1P Fabry-Perot semiconductor laser with a high frequency filter, operating at 650mm, and the application of these signals to bandwidth measurement of POFs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.11-20
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• 2002

The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.187-192
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• 2000

We analyze the parametric amplification by the nonlinear characteristics in a semiconductor laser using a perturbation theory and discuss its result. The parametric gain increases with increase of the pump modulation current. It is due to shift of the resonance frequency as the pump modulation current increases. However, it decreases with increase of the bias current and damping constant. Also, it needs phase matching between the pump modulation current and signal modulation current to maximize the parametric gain. The gain decreases for a large signal modulation current due to the saturation of the amplified power. power.