• Proceedings of the Korean Magnestics Society Conference
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• 2008.06a
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• pp.112-113
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.202.1-202.1
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.79.2-79
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• 1998

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.755-758
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• 2012

We developed a new solar simulator to evaluate a large-scale solar cell using seven kinds of LEDs (Infrared, Red, Yellow, Green, Blue, White and Ultra Violet LED). LED solar simulator can be displaced the existing solar simulator which has several demerits such as high power consumption and short lifetime. We have tried to fabricate LED solar simulator which fulfills the spectrum for AM 1.5G condition, and to verify the feasibility of LED solar simulator.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.15-19
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• 1998

Structural and optical properties of $In_xGa_{1-X}N$ as well as $In_{0.1}Ga_{0.9}N$/GaN single quantum we11 (SQW) grown on sapphire (0001) substrate with an based GaN using rf-plasma assisted MBE have been investigated. The quality of the InXGal.,N fdm was improved as the growth temperature increased. In PL measurements at low temperatures, the band edge emission peaks of $In_xGa_{1-X}N$ was shifted to red region as an indium cell and substrate temperature increased. For $In_{0.1}Ga_{0.9}N$/GaN SQW, the optical emission energy has blue shift about 15meV in PL peak, due to the confined energy level in the well region. And, the FWHM of the $In_{0.1}Ga_{0.9}N$/GaN SQW was larger than that of the bulk Ino,la.9N films. The broadening of FWHM can be explained either as non-uniformity of Indium composition or the potential fluctuation in the well region. Photoconductivity (PC) decay measurement reveals that the optical transition lifetimes of the SQW measured gradually increased with temperatures.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.4
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• pp.35-46
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• 2000

Semiconductor technology includes from semiconductor materials, design, fabrication, handling of process equipments, reliability test to packaged semiconductor devices. Our departmental curriculum is organized with 2-years/6-quarters system of Ulsan College: the understanding for the fundamental of semiconductor is carried out in the first academic year and the training for the design skill on semiconductor devices will be focused in the second academic year. The main focus is reflected on the worldwide trend on the design engineering of semiconductor devices and considered for the market establishment on design engineers trained by the lab-oriented practice as well as the fundamental of semiconductor technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.7-15
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• 2015

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.231-234
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• 2000

Vertically aligned carbon nanotubes were synthesized on Ni-coated Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films was varied with the RF power density during the RF magnetron sputtering process. It was found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled. The number of graphitized wall decreased with decreasing the diameter. Field emission properties will be further presented.

• Proceedings of the Korea Information Processing Society Conference
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• 2022.11a
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• pp.934-936
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• 2022

현재 사회적인(COVID-19) 영향으로 메타버스에 대한 수요가 급증하였지만, 메타버스 플랫폼 진입을 지원하는 XR(AR/VR) 장비의 높은 가격대와 전문성 요구로 폭넓은 수요층을 포괄하기 어려운 상황이다. 본 논문에서는 이러한 수요층의 어려움을 개선하고자 웹 캠이나 스마트폰 카메라로 생성된 개인의 사진 이미지를 StyleGAN 딥러닝 기술과 접목시켜 캐릭터를 생성해 Mediapipe를 활용하여 모션 측정 및 제어를 처리하는 서비스를 제안하여 메타버스 시장의 대중화에 기여하고자 한다.